Influence of s-d interfacial scattering on the magnetoresistance of magnetic tunnel junctions

We propose the two-band s-d model to describe theoretically a diffuse regime of the spin-dependent electron transport in magnetic tunnel junctions (MTJ's) of the form F/O/F where F's are 3d transition metal ferromagnetic layers and O is the insulating spacer. We aim to explain the strong interface sensitivity of the tunneling properties of MTJ's and investigate the influence of electron scattering at the nonideal interfaces on the degradation of the TMR magnitude. The generalized Kubo formalism and the Green's functions method were used to calculate the conductance of the system. The vertex corrections to the conductivity were found with the use of "ladder" approximation combined with the coherent-potential approximation (CPA) that allowed to consider the case of strong electron scattering. It is shown that the Ward identity is satisfied in the framework of this approximation that provides the necessary condition for a conservation of a tunneling current. Based on the known results of ab-initio calculations of the TMR for ballistic junctions, we assume that exchange split quasi-free s-like electrons with the density of states being greater for the majority spin sub-band give the main contribution to the TMR effect. We show that, due to interfacial inter-band scattering, the TMR can be substantially reduced even down to zero value. This is related to the fact that delocalized quasi-free electrons can scatter into the strongly localized d sub-band with the density of states at the Fermi energy being larger for minority spins compared to majority spins. It is also shown that spin-flip electron scattering on the surface magnons within the interface leads to a further decrease of the TMR at finite temperature.Comment: REVTeX4, 20 pages, 9 figures, 1 table, submitted to Phys.Rev.B; In Version 2 the text is substantially improved, the main results and conclusions left the sam

Canted Magnetization Texture in Ferromagnetic Tunnel Junctions

We study the formation of inhomogeneous magnetization texture in the vicinity of a tunnel junction between two ferromagnetic wires nominally in the antiparallel configuration and its influence on the magnetoresistance of such a device. The texture, dependent on magnetization rigidity and crystalline anisotropy energy in the ferromagnet, appears upon an increase of ferromagnetic inter-wire coupling above a critical value and it varies with an external magnetic field.Comment: 5 pages, 4 figure

Electronic Phase Separation in Manganite/Insulator Interfaces

By using a realist microscopic model, we study the electric and magnetic properties of the interface between a half metallic manganite and an insulator. We find that the lack of carriers at the interface debilitates the double exchange mechanism, weakening the ferromagnetic coupling between the Mn ions. In this situation the ferromagnetic order of the Mn spins near the interface is unstable against antiferromagnetic CE correlations, and a separation between ferromagnetic/metallic and antiferromagnetic/insulator phases at the interfaces can occur. We obtain that the insertion of extra layers of undoped manganite at the interface introduces extra carriers which reinforce the double exchange mechanism and suppress antiferromagnetic instabilities.Comment: 8 pages, 7 figures include

All Magnesium diboride Josephson Junctions with MgO and native oxide barriers

We present results on all-MgB2 tunnel junctions, where the tunnel barrier is deposited MgO or native-oxide of base electrode. For the junctions with MgO, the hysteretic I-V curve resembles a conventional underdamped Josephson junction characteristic with critical current-resistance product nearly independent of the junction area. The dependence of the critical current with temperature up to 20 K agrees with the [Ambegaokar and Baratoff, Phys. Rev. Lett. 10, 486 (1963)] expression. For the junctions with native-oxide, conductance at low bias exhibits subgap features while at high bias reveals thick barriers. As a result no supercurrent was observed in the latter, despite the presence of superconducting-gaps to over 30 K.Comment: 8 pages with 3 figure

A superconducting absolute spin valve

A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretical predicted that the combination of two such spin-split superconductors with independently tunable magnetizations, may be used as an ideal $absolute$ spin-valve. Here we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized currents through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, logical element for a memory cell in cryogenics superconductor-based computers and superconducting spintronics in general.Comment: 6 pages, 4 color figures, 1 tabl

Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO3_3

The combination of ferromagnets with topological superconductors or insulators allows for new phases of matter that support excitations such as chiral edge modes and Majorana fermions. EuS, a wide-band-gap ferromagnetic insulator with a Curie temperature around 16 K, and SrTiO$_3$ (STO), an important substrate for engineering heterostructures, may support these phases. We present scanning superconducting quantum interference device (SQUID) measurements of EuS grown epitaxially on STO that reveal micron-scale variations in ferromagnetism and paramagnetism. These variations are oriented along the STO crystal axes and only change their configuration upon thermal cycling above the STO cubic-to-tetragonal structural transition temperature at 105 K, indicating that the observed magnetic features are due to coupling between EuS and the STO tetragonal structure. We speculate that the STO tetragonal distortions may strain the EuS, altering the magnetic anisotropy on a micron-scale. This result demonstrates that local variation in the induced magnetic order from EuS grown on STO needs to be considered when engineering new phases of matter that require spatially homogeneous exchange

Revealing the magnetic proximity effect in EuS/Al bilayers through superconducting tunneling spectroscopy

A ferromagnetic insulator attached to a superconductor is known to induce an exchange splitting of the Bardeen-Cooper-Schrieffer (BCS) singularity by a magnitude proportional to the magnetization, and penetrating into the superconductor to a depth comparable with the superconducting coherence length. We study this long-range magnetic proximity effect in EuS/Al bilayers and find that the exchange splitting of the BCS peaks is present already in the unpolarized state of the ferromagnetic insulator (EuS), and is being further enhanced when magnetizing the sample by a magnetic field. The measurement data taken at the lowest temperatures feature a high contrast which has allowed us to relate the line shape of the split BCS conductance peaks to the characteristic magnetic domain structure of the EuS layer in the unpolarized state. These results pave the way to engineering triplet superconducting correlations at domain walls in EuS/Al bilayers. Furthermore, the hard gap and clear splitting observed in our tunneling spectroscopy measurements indicate that EuS/Al bilayers are excellent candidates for substituting strong magnetic fields in experiments studying Majorana bound states.Comment: 9 pages, 4 color figure

Shot Noise in Magnetic Tunnel Junctions: Evidence for Sequential Tunneling

We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in conductance, the Fano factor (normalized shot noise) depends on the magnetic configuration being enhanced for antiparallel alignment of the ferromagnetic electrodes. We propose a model of sequential tunneling through nonmagnetic and paramagnetic impurity levels inside the tunnel barrier to qualitatively explain the observations.Comment: 5 pages, 5 figure