A discontinuous Galerkin method for the Vlasov-Poisson system

A discontinuous Galerkin method for approximating the Vlasov-Poisson system of equations describing the time evolution of a collisionless plasma is proposed. The method is mass conservative and, in the case that piecewise constant functions are used as a basis, the method preserves the positivity of the electron distribution function and weakly enforces continuity of the electric field through mesh interfaces and boundary conditions. The performance of the method is investigated by computing several examples and error estimates associated system's approximation are stated. In particular, computed results are benchmarked against established theoretical results for linear advection and the phenomenon of linear Landau damping for both the Maxwell and Lorentz distributions. Moreover, two nonlinear problems are considered: nonlinear Landau damping and a version of the two-stream instability are computed. For the latter, fine scale details of the resulting long-time BGK-like state are presented. Conservation laws are examined and various comparisons to theory are made. The results obtained demonstrate that the discontinuous Galerkin method is a viable option for integrating the Vlasov-Poisson system.Comment: To appear in Journal for Computational Physics, 2011. 63 pages, 86 figure

Quantitative Topographical Characterization of Thermally Sprayed Coatings by Optical Microscopy

Topography measurements and roughness calculations for different rough surfaces (Rugotest surface comparator and thermally sprayed coatings) are presented. The surfaces are measured with a novel quantitative topography measurement technique based on optical stereomicroscopy and a comparison is made with established scanning stylus and optical profilometers. The results show that for most cases the different methods yield similar results. Stereomicroscopy is therefore a valuable method for topographical investigations in both quality control and research. On the other hand, the method based on optical microscopy demands a careful optimization of the experimental settings like the magnification and the illumination to achieve satisfactory result

Characterisation of micromechanical properties using advanced techniques

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 - August 2, 201

Influence of carrier-carrier and carrier-phonon correlations on optical absorption and gain in quantum-dot systems

A microscopic theory is used to study the optical properties of semiconductor quantum dots. The dephasing of a coherent excitation and line-shifts of the interband transitions due to carrier-carrier Coulomb interaction and carrier-phonon interaction are determined from a quantum kinetic treatment of correlation processes. We investigate the density dependence of both mechanisms and clarify the importance of various dephasing channels involving the localized and delocalized states of the system.Comment: 12 pages, 10 figure

Indistinguishable photons from the resonance fluorescence of a single quantum dot in a microcavity

We demonstrate purely resonant continuous-wave optical laser excitation to coherently prepare an excitonic state of a single semiconductor quantum dot (QDs) inside a high quality pillar microcavity. As a direct proof of QD resonance fluorescence, the evolution from a single emission line to the characteristic Mollow triplet10 is observed under increasing pump power. By controlled utilization of weak coupling between the emitter and the fundamental cavity mode through Purcell-enhancement of the radiative decay, a strong suppression of pure dephasing is achieved, which reflects in close to Fourier transform-limited and highly indistinguishable photons with a visibility contrast of 90%. Our experiments reveal the model-like character of the coupled QD-microcavity system as a promising source for the generation of ideal photons at the quantum limit. From a technological perspective, the vertical cavity symmetry -- with optional dynamic tunability -- provides strongly directed light emission which appears very desirable for future integrated emitter devices.Comment: 24 pages, 6 figure

Transition in plastic deformation of nanolayered thin films: Role of interfaces and temperature

Insights into the parameters governing the plasticity of immiscible, nanocrystalline metals stacked in the form of layers are pivotal both from scientific and applications’ perspectives. An outstanding case consists of the contact metallurgy of pure copper used ubiquitously as metallic interconnects in electronic devices. Diffusion barrier layers such W or TiN are necessary to prevent undesirable diffusion of Cu into the Si-based device during synthesis and service. Also, supersaturated Cu-Cr alloys are desirable for improving the strength, while retaining optimal functional properties required for the application. The scientific curiosity lies in understanding the effects of reducing microstructural length scales on the mechanical properties of both of these materials at elevated temperatures. In addition, alternate layering with an immiscible element forms a viable solution to the difficultly in synthesis and application of pure nanocrystalline materials due to their poor microstructural stability. The mechanical behavior of several nanolayered thin films consisting of soft and relatively hard metals or brittle ceramics have been extensively studied at ambient conditions [1-3] by using various models predicting strength as function of grain size or layer thickness. But, few have investigated the elevated temperature mechanical response [4] of similar systems and have been restricted to a specific metal (Al) – ceramic (SiC) combination [5]. This presentation attempts to highlight the role of interfaces and diffusion in plastic flow and failure of mutually immiscible, nanolayered systems at elevated temperatures. The nanolayered thin films consist of mainly sub-100 nm thick layers of pure Cu sandwiched by layers of pure metals of Cr and W and a pure ceramic of TiN, which were grown on Si(100) substrates to thickness of 2-5 μm by using direct current magnetron sputtering. The mechanical response at elevated temperatures of the films was studied by compressing micropillars, which were fabricated using a focused Ga+ beam, in situ SEM using an AlemnisÒ indenter modified for high temperature testing. Lateral flow of Cu promoted by stress-assisted diffusion at homologous temperatures as low as 0.35 occurred in all three systems in contrast to interfacial shear-dominated flow at lower temperatures (Fig. 1). Predictions of discrete dislocation and continuum plasticity models were used to evaluate the change in the yield strengths of the films with respect to the layer thicknesses of Cu in the different systems

Determination of plastic properties of metals by instrumented indentation using a stochastic optimization algorithm

A novel optimization approach, capable of extracting the mechanical properties of an elasto-plastic material from indentation data, is proposed. Theoretical verification is performed on two simulated configurations. The first is based on the analysis of the load-displacement data and the topography of the residual imprint of a single conical indenter. The second is based on the load-displacement data obtained from two conical indenters with different semi-angles. In both cases, a semi-analytical approach [e.g., Dao et al., Acta Mater. 49, 3899 (2001) and Bucaille et al., Acta Mater. 51, 1663 (2003)] is used to estimate Young's modulus, yield stress, and strain hardening coefficient from the load-displacement data. An inverse finite element model, based on a commercial solver and a newly developed optimization algorithm based on a robust stochastic methodology, uses these approximate values as starting values to identify parameters with high accuracy. Both configurations use multiple data sets to extract the elastic-plastic material properties; this allows the mechanical properties of materials to be determined in a robust wa

In situ compression tests on micron-sized silicon pillars by Raman microscopy—Stress measurements and deformation analysis

Mechanical properties of silicon are of high interest to the microelectromechanical systems community as it is the most frequently used structural material. Compression tests on 8 μm diameter silicon pillars were performed under a micro-Raman setup. The uniaxial stress in the micropillars was derived from a load cell mounted on a microindenter and from the Raman peak shift. Stress measurements from the load cell and from the micro-Raman spectrum are in excellent agreement. The average compressive failure strength measured in the middle of the micropillars is 5.1 GPa. Transmission electron microscopy investigation of compressed micropillars showed cracks at the pillar surface or in the core. A correlation between crack formation and dislocation activity was observed. The authors strongly believe that the combination of nanoindentation and micro-Raman spectroscopy allowed detection of cracks prior to failure of the micropillar, which also allowed an estimation of the in-plane stress in the vicinity of the crack ti