Moisture resistance of SU-8 and KMPR as structural material for integrated gaseous detectors

This paper treats the moisture resistance of SU-8 and KMPR, two photoresists considered as structural material in microsystems. Our experiments focus on the moisture resistance of newly developed radiation imaging detectors containing these resists. Since these microsystems will be used unpackaged, they are susceptible to all kinds of environmental conditions. Already after one day of exposure to a humid condition the structural integrity and adhesion of SU-8 structures, measured by a shear test is drastically reduced. KMPR photoresist shows much stronger moisture resistance properties, making it a suitable alternative in our application. © 2008 Elsevier Science. All rights reserved

Moisture resistance of SU-8 and KMPR as structural material

This paper treats the moisture resistance of SU-8 and KMPR, two photoresists considered as structural material in microsystems. Our experiments focus on the moisture resistance of newly developed radiation imaging detectors containing these resists. Since these microsystems will be used unpackaged, they are susceptible to all kinds of environmental conditions. Already after 1 day of exposure to a humid condition the structural integrity and adhesion of SU-8 structures, measured by a shear test is drastically reduced. KMPR photoresist shows much stronger moisture resistance properties, making it a suitable alternative in our application

Photocathodes for a post-processed imaging array

Preliminary results of a photon detector combining a Micromegas like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in the CMOS compatible InGrid technology, which allows to post-process it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of ~6000 were reached in a singlegrid element operated in Ar/CH4, with a 2% Ion Back Flow fraction returning to the photocathode

A Radiation Imaging Detector Made by Postprocessing a Standard CMOS Chip

An unpackaged microchip is used as the sensing element in a miniaturized gaseous proportional chamber. Thisletter reports on the fabrication and performance of a complete radiation imaging detector based on this principle. Our fabrication schemes are based on wafer-scale and chip-scale postprocessing.\ud Compared to hybrid-assembled gaseous detectors, our microsystem shows superior alignment precision and energy resolution, and offers the capability to unambiguously reconstruct 3-D radiation tracks on the spot.\u

Technological aspects of gaseous pixel detectors fabrication

Integrated gaseous pixel detectors consisting of a metal punctured foil suspended in the order of 50μm over a pixel readout chip by means by SU-8 insulating pillars have been fabricated. SU-8 is used as sacrificial layer but metallization over uncrosslinked SU-8 presents adhesion and stress problems. In this paper we describe the several methods we have investigated to fabricate a metal layer on top of a partially crosslinked SU-8 film and the challenges we have encountered. The fabrication process using wafer post processing has been proven, but in cases where single chip processing is desirable, edge bead is a major problem to overcome as it can cover a considerable chip area, reducing the detector performance; we show different techniques to reduce this edge bead and improve detection efficiency