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Photocathodes for a post-processed imaging array

Abstract

Preliminary results of a photon detector combining a Micromegas like multiplier coated with a UV-sensitive CsI photocathode are described. The multiplier is made in the CMOS compatible InGrid technology, which allows to post-process it directly on the surface of an imaging IC. This method is aimed at building light-sensitive imaging detectors where all elements are monolithically integrated. We show that the CsI photocathode deposited in the InGrid mesh does not alter the device performance. Maximum gains of ~6000 were reached in a singlegrid element operated in Ar/CH4, with a 2% Ion Back Flow fraction returning to the photocathode

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