Spectrally and spatially resolved cathodoluminescence of undoped/Mg-doped GaN core-shell nanowires: a local probe into activation of Mg acceptors in non-polar and semi-polar crystal faces

Producción CientíficaSpectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanowires grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanowires is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatments. For lower Mg/Ga flow ratios, the annealed nanowires clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanowire shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping,Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA302U13

Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells

Producción CientíficaWe present a polarization, spectrally, and spatially resolved near-field photoluminescence (PL) measurement technique and apply it to the study of wide m-plane InxGa1−xN/GaN quantum wells grown on on-axis and miscut GaN substrates. It is found that PL originates from localized states; nevertheless, its degree of linear polarization (DLP) is high with little spatial variation. This allows an unambiguous assignment of the localized states to InxGa1−xN composition-related band potential fluctuations. Spatial PL variations, occurring due to morphology features of the on-axis samples, play a secondary role compared to the variations of the alloy composition. The large PL peak wavelength difference for polarizations parallel and perpendicular to the c axis, the weak correlation between the peak PL wavelength and the DLP, and the temperature dependence of the DLP suggest that effective potential variations and the hole mass in the second valence-band level are considerably smaller than that for the first level. DLP maps for the long wavelength PL tails have revealed well-defined regions with a small DLP, which have been attributed to a partial strain relaxation around dislocations.Swedish Energy Agency (Contract No. 36652-1)Swedish Research Council (Contract No. 621-2013- 4096

A cathodoluminescence study on the diffusion length in AlGaInP/InGaP/AlInP solar cell heterostructures

Producción CientíficaThe diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the intersection between a thin metallic mask and the semiconductor; a second approach consists of the measurement of the intensity profile around an intentional scratch on the surface of the sample. A longer diffusion length is measured when using the metallic mask as compared with the scratch. We discuss the role of non-radiative recombination centers in the reduction of the diffusion length around the scratch. The temperature dependence of the diffusion length is also measured, and the length is found to decrease with temperature.Junta de Castilla y León (project VA283P18)Ministerio de Economía, Industria y Competitividad (project ENE2017- 89561-C4-3-R

EUPVSEC 2018

There are many characterization techniques available to evaluate the health of solar panels, such as I-V characterization, infrared thermography (IR), photoluminescence (PL) and electroluminescence (EL). EL imaging has become in recent years a powerful diagnostic tool to evaluate PV modules. EL images allow to detect several defects and degradation modes in the solar cells. The failures are observed as dark contrasted areas in the images. Broad dark regions can be detected even in a low resolution image, while a high resolution image is needed to detect some more specific problems such as cracks, multi-cracks or other line-shaped defects.PósterJunta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA081U16)Ministerio de Economía, Industria y Competitividad (Proyect ENE2014-56069-C4-4-R

Defect characterization of UMG mc-Si solar cells using LBIC and luminescence imaging techniques

Upgraded metallurgical-grade silicon (UMG Si) solar cells with different ranges of efficiencies were characterized through electroluminescence imaging (ELi) and light-beam induced current (LBIC) measurements. The results showed a good correlation between the EL intensity and the efficiency of the solar cells. ELi images gave a bright contrast at the defects, grain boundaries and intragrain defects, and dark contrast inside the grain bodies. Metallic impurities are much more present in some cells due to the directional solidification of the Si ingot. Local short-circuit current mapping with LBIC measurements revealed a bright zone in the neighborhoods of the defects due to the depletion of impurities. Internal quantum efficiencies (IQE) and effective diffusion lengths (Leff) were calculated using different excitation wavelengths. High resolution LBIC measurements revealed micrometric clusters of impurities around intragrain defectsSpanish MINECO project, ref. ENE2014-56069-C4-4-R and “Junta de Castilla y León (Spain)” project number VA081U1

Influence of metal organic chemical vapour deposition growth conditions on vibrational and luminescent properties of ZnO nanorods

Producción CientíficaA detailed optical characterization by means of micro Raman and cathodoluminescence spectroscopy of catalyst-free ZnO nanorods grown by atmospheric-metal organic chemical vapour deposition has been carried out. This characterization has allowed correlating the growth conditions, in particular the precursors partial-pressures and growth time, with the optical properties of nanorods. It has been shown that a high Zn supersaturation can favor the incorporation of nonradiative recombination centers, which can tentatively be associated with ZnI-related defects. Characterization of individual nanorods has evidenced that ZnI-related defects have a tendency to accumulate in the tip part of the nanorods, which present dark cathodoluminescence contrast with respect to the nanorods bottom. The effect of a ZnO buffer layer on the properties of the nanorods has been also investigated, showing that the buffer layer improves the luminescence efficiency of the ZnO nanorods, revealing a significant reduction of the concentration of nonradiative recombination centers.Ministerio de Ciencia e Innovación (Projects MAT2007-66129, MAT-2010-20441-C02, MAT-2010-16116, and TEC2011-28076-C02-02)Generalitat Valenciana (Prometeo/2011-035 and ISIC/2012/008, Institute of Nanotechnologies for Clean Energies

Electrical activity of crystal defects in multicrystalline Si

Producción CientíficaUpgraded metallurgical-grade silicon solar cells with different ranges of efficiencies have been characterized by light-beam-induced current (LBIC) measurements. The interaction between grain boundaries and metallic impurities is studied for cells fabricated on wafers from different solidification heights of the ingot. A tight relation is observed between the electrical activity of the grain boundaries and the position of the wafer in the ingot, which is related to the impurity contamination. The presence of a large amount of metallic impurities enhances the electrical activity of the grain boundaries. The main features of the LBIC images are discussed in relation to the presence of metallic impurities.Junta de Castilla y León (project VA283P18)Ministerio de Economía, Industria y Competitividad (project ENE2017-89561-C4-3-R

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

Producción CientíficaMulticristalline Silicon (mc-Si) is the preferred material for current terrestrial photovoltaic applications. However, the high density of defects present in mc-Si deteriorates the material properties, in particular the minority carrier diffusion length. For this reason, a large effort to characterize the mc-Si material is demanded, aiming to visualize the defective areas and to quantify the type of defects, density and its origin. In this work, several complementary light and electron probe techniques are used for the analysis of both mc-Si wafers and solar cells. These techniques comprise both fast and whole-area detection techniques such as Photoluminescence imaging, and highly spatially resolved time consuming techniques, such as light and electron beam induced current techniques and μRaman spectroscopy. These techniques were applied to the characterization of different mc-Si wafers for solar cells, e.g. ribbon wafers, cast mc-Si as well as quasi-monocrystalline material, upgraded metallurgical mc-Si wafers, and finished solar cells.Junta de Castilla y León (programa de apoyo a proyectos de investigación - Ref. VA166A11-2)Ministerio de Ciencia e Innovación (Proyect IPT-420000-2010-022 INNPACTO)Ministerio de Economía, Industria y Competitividad (Project ENE2014-56069-C4-4-R

Raman Study of Multicrystalline Silicon Wafers Produced by the RST Process

Producción CientíficaIn the silicon ribbon on a sacrificial template process silicon is deposited on both sides of a carbon ribbon, thus forming a Si/carbon/Si trilayer. The fast cooling of the ribbon in large temperature gradients generates stresses that are detrimental to both the electrical performance and the mechanical behaviour of the wafers. The assessment of the stresses is crucial for the setting-up of thermal treatments allowing for the stress relaxation of the wafers, prior to the cell fabrication. We present an analysis of the stress in the as-grown trilayer by a simulation of the thermomechanical behaviour of the cooling ribbon. Experimental measurements of the stress in as-grown and annealed trilayers are also presented. The results permit to establish the conditions for optimized growth and annealing.Proceedings of the 15th International Conference on Defects Recognition, Imaging and Physics in Semiconductors-Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. VA166A11-2)Ministerio de Ciencia e innovación (IPT-420000-2010- -022 INNPACTO program

Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

Producción CientíficaIn this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.Ministerio de Economía, Industria y Competitividad (Projects No. TEC2014-55948-R and MAT2016-75716-C2-1-R (AEI/FEDER, UE)Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Projects VA293U13 and VA081U16)Comisión Interministerial de Ciencia y Tecnología (Proyect CICYT MAT2010-20441-C02)Ministerio de Economía, Industria y Competitividad (Projects No.ENE2014-56069-C4-4-R