Comparing radiation tolerant materials and devices for ultra rad-hard tracking detectors

The need for ultra-radiation hard semiconductor detectors for the inner tracker regions in high energy physics experiments of the future generation can be satisfied either with materials which are inherently more radiation hard than float zone silicon or with special detector structures with improved radiation resistance. This report compares directly the data on the performance of rad-hard materials and devices proposed for the superLHC

Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p+n junctions

Abstract The distribution of energy levels within the bandgap of epitaxial 4H-SiC p + /n junctions was studied. The junction was obtained by Al ion implantation on a nitrogen doped n-type epitaxial substrate. Thermally stimulated currents/capacitance (TSC/TSCAP) as well as current/capacitance deep level transient spectroscopy (I- and C-DLTS) were carried out over a wide temperature range (20–400 K). The two TSC/DLTS peaks associated with N-doping were detected for the first time and their trap signatures determined. Two hole traps relating to deep and shallow boron confirm that a boron contamination occurred during crystal growth. A negligible concentration of the Z 1/2 level, which is usually the dominant level produced by irradiation of ion implant, was measured. The concentrations of all observed traps were significantly lower than nitrogen one, which determines the doping. This evidence supports the high quality of the processed junctions, making these devices particularly attractive for future use in particle detection as well as in optoelectronic applications

Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon

A quantitative study about the thermal activation of oxygen related thermal donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation has been performed through isothermal annealing at 430°C up to a total time of 120min. Space charge density after each annealing step has been measured by transient current technique. The localized energy levels related to thermal double donors (TD) have been observed and studied in details by thermally stimulated currents (TSCs) in the range of 10–70K, and activation energies E and effective cross sections σ have been determined for both the emissions TD0∕+ (E=75±5meV, σ=4×10−14cm2) and TD+∕+ (E=170±5meV, σ=2×10−12cm2). The evolution of the space charge density caused by annealing has been unambiguously related to the activation of TDs by means of current deep level transient spectroscopy TSC, and current transients at constant temperature i(t,T). Our results show that TDs compensate the initial boron doping, eventually provoking the sign inversion of the space charge density. TD's generation rate has been found to be linear with the annealing time and to depend critically on the initial interstitial oxygen concentration, in agreement with previous models developed on low resistivity silicon

A study of charge collection processes on polycrystalline diamond detectors

Abstract We performed a study of charge collection distance (CCD) on medium to high-quality prototypes of diamond sensors prepared by Chemical Vapor Deposition (CVD). We studied the Charge Collection Efficiency in these materials supposing that it is limited by the presence of a recombination level and a distribution of trap levels centered at 1.7 eV from the band-edge. We also supposed that the exposition to ionizing radiation can make the trap levels ineffective (pumping effect). We have shown that these assumptions are valid by correlating the CCD to the pumping efficiency. Moreover, we have shown that the pumping efficiency is bias-dependent. We have explained our experimental results assuming that trapped carriers generate an electric field inside the diamond bulk