Abstract We performed a study of charge collection distance (CCD) on medium to high-quality prototypes of diamond sensors prepared by Chemical Vapor Deposition (CVD). We studied the Charge Collection Efficiency in these materials supposing that it is limited by the presence of a recombination level and a distribution of trap levels centered at 1.7 eV from the band-edge. We also supposed that the exposition to ionizing radiation can make the trap levels ineffective (pumping effect). We have shown that these assumptions are valid by correlating the CCD to the pumping efficiency. Moreover, we have shown that the pumping efficiency is bias-dependent. We have explained our experimental results assuming that trapped carriers generate an electric field inside the diamond bulk
