INFLUENCE OF AMORPHOUS CARBON ON THE STRUCTURE AND ELECTRICAL PROPERTIES OF (ZnO/С)81 THIN FILMS

(ZnO/C)81 thin films was prepared by ion beam sputtering. Analysis of the structure for resulting thin films showed that the ZnO layers are in the nanocrystalline state, and the carbon layers are in amorphous state. By adding amorphous carbon, the process of recrystallization in (ZnO/C)81 thin films was reduced in comparison with ZnO films (grain size increase).Работа выполнена при поддержке Министерства образования и науки в рамках проектной части государственного задания (проект № 3.1867.2017/4.6)

THE STRUCTURE AND THE ELECTRICAL PROPERTIES OF HETEROGENEOUS NANOSYSTEMS BASED ON ZnO AND SnO2 OXIDE SEMICONDUCTORS

The effect of heat treatment on the structure and the electrical properties of ZnO/SnO2 multilayer thin-film systems studied. It was found that the films have a layered structure that is stable up to 400°C. After annealing at 400°C and 600°C Mott variable range hopping con-duction mechanism observed.Работа выполнена при поддержке Министерства науки и высшего образования РФ в рамках государственного задания (проект № FZGM-2020-0007)

Conduction Mechanisms in the Thin Film Structure [(Co40Fe40B20)34(SiO2)66/ZnO]112

The paper presents the results of analysis of the mechanisms of electrotransport in thin-film multilayer structures [(Co40Fe40B20)34(SiO2)66/ZnO]112 in the temperature range 77-300 K.Работа выполнена при поддержке гранта Президента Российской Федерации для государственной поддержки молодых российских ученых - кандидатов наук МК-4296.2022.1.

EFFECT OF PHOTON TREATMENT ON STRUCTURE OF NIOBIUM OXIDE FILMS

In this work, we investigate changes in the phase composition, morphology, and structural changes during the photonic treatment of films obtained in the process of ion-beam sputtering of an Nb2O5 target. It was found that the initial films have an amorphous structure; at an irradiation energy of ~ 1.Работа была выполнена при поддержке государственного задания (N FZGM-2020-0007)

EFFECT OF ANNEALING ON THE MAGNETORESISTIVE PROPERTIES OF (Co47Fe42Zr11)х(MgF2)100-х COMPOSITES

Magnetic and magnetoresistive properties of (CoFeZr)х(MgF2)100-х thin film composites have been investigated in wide range of metal phase concentration (14 ат.% ≤ х ≤ 52 ат.%). The composites were studied in initial state and after heat treatment at different temperatures up to 350 oC.Работа выполнена при поддержке Министерства науки и высшего образования Российской Федерации (проект № FZGM-2023-0006)

OPTICAL PROPERTIES OF (In2O3/SiO2)25 MULTILAYER STRUCTURES

(In2O3/SiO2)25 multilayer structures were obtained by ion-beam sputtering. The structure of (In2O3/SiO2)25 thin films are amorphous. Multilayer structures have high transparency and low electrical resistance, which makes them a promising material for transparent electronics.Работа была выполнена при поддержке государственного задания (№ FZGM-2020-0007)

Rare-earth and rare-metal mineralization in late granite of Syrostan massif (Southern Urals)

The article provides a complete list of Syrostan massif minerals, which includes 47 mineral species. It is shown that the rare-metal and rare-earth mineralization is confined to the late vein facies - granite dykes and pegmatites. Characteristic morphology and composition of new minerals of the massif: fergusonite-(Y), euxenite-(Y), polycrase-(Y), broggerit, thorogummite, and minerals already known: samarskite-(Y), columbi-te-(Mn), ilmenite, ilmenorutile, zircon, cyrtolite, allanite-(Ce) are given. Previously, it was found that allanite and titanite make the largest contribution to the balance of REE in the rocks of the main phases of the massif. These studies let to distinguish the new specialization for the massif - Nb-Ta-Ti-Y-REE-Zr-Th-U, connected with the rare-earth-rare-metal minerals association of vein granites and pegmatites

THERMOEMF OF THIN-FILM STRUCTURES In2O3/SiO2

Thin films (In2O3/SiO2)25 were by ion-beam sputtering. The effect of heat treatment on the phase composition and thermopower is studied. Increasing of annealing temperature – a thermopower was decrease. After annealing, the structure of thin films is preserved up to a temperature of 500°C.Данная работа выполнена при поддержке РФФИ (Грант №19-48-360010 р_а)