(In2O3/SiO2)25 multilayer structures were obtained by ion-beam sputtering. The structure of (In2O3/SiO2)25 thin films are amorphous. Multilayer structures have high transparency and low electrical resistance, which makes them a promising material for transparent electronics.Работа была выполнена при поддержке государственного задания (№ FZGM-2020-0007)
