Polymer Dissolution Model: An Energy Adaptation Of The Critical Ionization Theory

The current scale of features size in the microelectronics industry has reached the point where molecular level interactions affect process fidelity and produce excursions from the continuum world like line edge roughness (LER). Here we present a 3D molecular level model based on the adaptation of the critical ionization (CI) theory using a fundamental interaction energy approach. The model asserts that it is the favorable interaction between the ionized part of the polymer and the developer solution which renders the polymer soluble. Dynamic Monte Carlo methods were used in the current model to study the polymer dissolution phenomenon. The surface ionization was captured by employing an electric double layer at the interface, and polymer motion was simulated using the Metropolis algorithm. The approximated interaction parameters, for different species in the system, were obtained experimentally and used to calibrate the simulated dissolution rate response to polymer molecular weight and developer concentration. The predicted response is in good agreement with experimental dissolution rate data. The simulation results support the premise of the CI theory and provide an insight into the CI model from a new prospective. This model may provide a means to study the contribution of development to LER and other related defects based on molecular level interactions between distinct components in the polymer and the developer.Chemical Engineerin

PEPSI deep spectra. III. A chemical analysis of the ancient planet-host star Kepler-444

We obtained an LBT/PEPSI spectrum with very high resolution and high signal-to-noise ratio (S/N) of the K0V host Kepler-444, which is known to host 5 sub-Earth size rocky planets. The spectrum has a resolution of R=250,000, a continuous wavelength coverage from 4230 to 9120A, and S/N between 150 and 550:1 (blue to red). We performed a detailed chemical analysis to determine the photospheric abundances of 18 chemical elements, in order to use the abundances to place constraints on the bulk composition of the five rocky planets. Our spectral analysis employs the equivalent width method for most of our spectral lines, but we used spectral synthesis to fit a small number of lines that require special care. In both cases, we derived our abundances using the MOOG spectral analysis package and Kurucz model atmospheres. We find no correlation between elemental abundance and condensation temperature among the refractory elements. In addition, using our spectroscopic stellar parameters and isochrone fitting, we find an age of 10+/-1.5 Gyr, which is consistent with the asteroseismic age of 11+/-1 Gyr. Finally, from the photospheric abundances of Mg, Si, and Fe, we estimate that the typical Fe-core mass fraction for the rocky planets in the Kepler-444 system is approximately 24 per cent. If our estimate of the Fe-core mass fraction is confirmed by more detailed modeling of the disk chemistry and simulations of planet formation and evolution in the Kepler-444 system, then this would suggest that rocky planets in more metal-poor and alpha-enhanced systems may tend to be less dense than their counterparts of comparable size in more metal-rich systems.Comment: in press, 11 pages, 3 figures, data available from pepsi.aip.d

Small ruminant production under pressure: The example of goats in southeast Nigeria

Presents preliminary assessment of animals' performance under a free-roaming and movement-restricted production system and farmers' responses to changed husbandry practices in southeast Nigeria; with particular reference to flock dynamics & male to female ratio; reproductive performance; growth rate; mortality; and farmers management & breeding strategy

Phonon driven spin distribution due to the spin-Seebeck effect

Here we report on measurements of the spin-Seebeck effect of GaMnAs over an extended temperature range alongside the thermal conductivity, specific heat, magnetization, and thermoelectric power. The amplitude of the spin-Seebeck effect in GaMnAs scales with the thermal conductivity of the GaAs substrate and the phonon-drag contribution to the thermoelectric power of the GaMnAs, demonstrating that phonons drive the spin redistribution. A phenomenological model involving phonon-magnon drag explains the spatial and temperature dependence of the measured spin distribution.Comment: 12 pages, 3 figure

Drift and Diffusion of Spins Generated by the Spin Hall Effect

Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved imaging reveals that spin accumulation observed in transverse arms develops due to longitudinal drift of spin polarization produced at the sample boundaries. One- and two-dimensional drift-diffusion modeling is used to explain these features, providing a more complete understanding of observations of spin accumulation and the spin Hall effect.Comment: 9 pages, 3 figure

Optical frequency combs from high-order sideband generation

We report on the generation of frequency combs from the recently-discovered phenomenon of high-order sideband generation (HSG). A near-band gap continuous-wave (cw) laser with frequency $f_\text{NIR}$ was transmitted through an epitaxial layer containing GaAs/AlGaAs quantum wells that were driven by quasi-cw in-plane electric fields $F_\text{THz}$ between 4 and 50 kV/cm oscillating at frequencies $f_\text{THz}$ between 240 and 640 GHz. Frequency combs with teeth at $f_\text{sideband}=f_\text{NIR}+nf_\text{THz}$ ($n$ even) were produced, with maximum reported $n>120$, corresponding to a maximum comb span $>80$ THz. Comb spectra with the identical product $f_\text{THz}\times F_\text{THz}$ were found to have similar spans and shapes in most cases, as expected from the picture of HSG as a scattering-limited electron-hole recollision phenomenon. The HSG combs were used to measure the frequency and linewidth of our THz source as a demonstration of potential applications

Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations

Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18 sidebands are observed at frequencies $f_{\text{sideband}}=f_{\text{NIR}}+2n f_{\text{THz}}$, with $-8 \le 2n \le 28$. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the $E_{\text{LO}} = 36$ meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to $2n=22$ persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above $E_{\text{LO}}$.Comment: 5 pages, 4 figure

Electrical spin protection and manipulation via gate-locked spin-orbit fields

The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated. Quantum computation and spintronics devices such as the paradigmatic spin transistor could vastly benefit if such spin protection could be expanded from a single point into a broad range accessible with in-situ gate-control, making possible tunable SO rotations under protection from relaxation. Here, we demonstrate broad, independent control of all relevant SO fields in GaAs quantum wells, allowing us to tune the Rashba and Dresselhaus SO fields while keeping both locked to each other using gate voltages. Thus, we can electrically control and simultaneously protect the spin. Our experiments employ quantum interference corrections to electrical conductivity as a sensitive probe of SO coupling. Finally, we combine transport data with numerical SO simulations to precisely quantify all SO terms.Comment: 5 pages, 4 figures (color), plus supplementary information 18 pages, 8 figures (color) as ancillary arXiv pd