46 research outputs found
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Low-power multi-chip module and board-level links for data transfer
Advanced device technologies such as Vertical Cavity Surface-Emitting Lasers (VCSELs) and diffractive micro lenses can be obtained with novel packaging techniques to allow low-power interconnection of parallel optical signals. These interconnections can be realized directly on circuit boards, in a multi-chip module format, or in packages that emulate electrical connectors. For applications such as stacking of Multi-Chip Module (MCM) layers, the links may be realized in bi-directional form using integrated diffractive microlenses. In the stacked MCM design, consumed electrical power is minimized by use of a relatively high laser output from high efficiency VCSELs, and a receiver design that is optimized for low power, at the expense of dynamic range. Within certain constraints, the design may be extended to other forms such as board-level interconnects
A survey of solution techniques for the partially observed Markov decision process
We survey several computational procedures for the partially observed Markov decision process (POMDP) that have been developed since the Monahan survey was published in 1982. The POMDP generalizes the standard, completely observed Markov decision process by permitting the possibility that state observations may be noise-corrupted and/or costly. Several computational procedures presented are convergence accelerating variants of, or approximations to, the Smallwood-Sondik algorithm. Finite-memory suboptimal design results are reported, and new research directions involving heuristic search are discussed.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/44198/1/10479_2005_Article_BF02204836.pd
The Science of Sungrazers, Sunskirters, and Other Near-Sun Comets
This review addresses our current understanding of comets that venture close to the Sun, and are hence exposed to much more extreme conditions than comets that are typically studied from Earth. The extreme solar heating and plasma environments that these objects encounter change many aspects of their behaviour, thus yielding valuable information on both the comets themselves that complements other data we have on primitive solar system bodies, as well as on the near-solar environment which they traverse. We propose clear definitions for these comets: We use the term near-Sun comets to encompass all objects that pass sunward of the perihelion distance of planet Mercury (0.307 AU). Sunskirters are defined as objects that pass within 33 solar radii of the Sunâs centre, equal to half of Mercuryâs perihelion distance, and the commonly-used phrase sungrazers to be objects that reach perihelion within 3.45 solar radii, i.e. the fluid Roche limit. Finally, comets with orbits that intersect the solar photosphere are termed sundivers. We summarize past studies of these objects, as well as the instruments and facilities used to study them, including space-based platforms that have led to a recent revolution in the quantity and quality of relevant observations. Relevant comet populations are described, including the Kreutz, Marsden, Kracht, and Meyer groups, near-Sun asteroids, and a brief discussion of their origins. The importance of light curves and the clues they provide on cometary composition are emphasized, together with what information has been gleaned about nucleus parameters, including the sizes and masses of objects and their families, and their tensile strengths. The physical processes occurring at these objects are considered in some detail, including the disruption of nuclei, sublimation, and ionisation, and we consider the mass, momentum, and energy loss of comets in the corona and those that venture to lower altitudes. The different components of comae and tails are described, including dust, neutral and ionised gases, their chemical reactions, and their contributions to the near-Sun environment. Comet-solar wind interactions are discussed, including the use of comets as probes of solar wind and coronal conditions in their vicinities. We address the relevance of work on comets near the Sun to similar objects orbiting other stars, and conclude with a discussion of future directions for the field and the planned ground- and space-based facilities that will allow us to address those science topics
Optimization of GaInNAs quantum-well vertical-cavity surface-emitting laser emitting at 2.33 ÎŒm
ComparaçÔes florĂsticas e estruturais entre comunidades de palmeiras em fragmentos de floresta primĂĄria e secundĂĄria da Ărea de Proteção Ambiental Raimundo Irineu Serra - Rio Branco, Acre, Brasil
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Low-Power, High-Speed InGaAs/InP Photoreceiver for Highly-Parallel Optical Data Links
Low-power photoreceivers based on InGaAs/InP heterojunction bipolar transistors (HBTs) and p-i-n diodes for highly-parallel optical data links have been designed, fabricated and characterized. The receivers and designed to operate from 980 nm to over 1.3 {mu}m and interface directly with 3.3 V CMOS. SPICE was utilized to investigate circuit topographies that minimize power dissipation while maintaining large signal operation required to interface directly with CMOS. Low-power dissipation of {approximately}10 mW/channel has been achieved at bit rates up to 800 Mbits/sec. Performance characteristics of discrete HBTs and of low-power photoreceivers fabricated with p-i-n/HBT circuits are reported
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Low-power, parallel photonic interconnections for Multi-Chip Module applications
New applications of photonic interconnects will involve the insertion of parallel-channel links into Multi-Chip Modules (MCMs). Such applications will drive photonic link components into more compact forms that consume far less power than traditional telecommunication data links. MCM-based applications will also require simplified drive circuitry, lower cost, and higher reliability than has been demonstrated currently in photonic and optoelectronic technologies. The work described is a parallel link array, designed for vertical (Z-Axis) interconnection of the layers in a MCM-based signal processor stack, operating at a data rate of 100 Mb/s. This interconnect is based upon high-efficiency VCSELs, HBT photoreceivers, integrated micro-optics, and MCM-compatible packaging techniques
Temperature dependence of minority hole mobility in n+-GaAs measured with a new variable temperature technique
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Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies
Heterojunction bipolar transistors (HBTs) are mesa structures which present difficult planarization problems in integrated circuit fabrication. The authors report a multilevel metal interconnect technology using Benzocyclobutene (BCB) to implement high-speed, low-power photoreceivers based on InGaAs/InP HBTs. Processes for patterning and dry etching BCB to achieve smooth via holes with sloped sidewalls are presented. Excellent planarization of 1.9 {micro}m mesa topographies on InGaAs/InP device structures is demonstrated using scanning electron microscopy (SEM). Additionally, SEM cross sections of both the multi-level metal interconnect via holes and the base emitter via holes required in the HBT IC process are presented. All via holes exhibit sloped sidewalls with slopes of 0.4 {micro}m/{micro}m to 2 {micro}m/{micro}m which are needed to realize a robust interconnect process. Specific contact resistances of the interconnects are found to be less than 6 {times} 10{sup {minus}8} {Omega}cm{sup 2}. Integrated circuits utilizing InGaAs/InP HBTs are fabricated to demonstrate the applicability and compatibility of the multi-level interconnect technology with integrated circuit processing