A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

Tailoring the electronic states of the dielectric oxide/diamond interface is critical to the development of next generation semiconductor devices like high-power high-frequency field-effect transistors. In this work, we investigate the electronic states of the TiO2/diamond 2 × 1-(100) interface by using first principles total energy calculations. Based on the calculation of the chemical potentials for the TiO2/diamond interface, it is observed that the hetero-interfaces with the C-OTi configuration or with two O vacancies are the most energetically favorable structures under the O-rich condition and under Ti-rich condition, respectively. The band structure and density of states of both TiO2/diamond and TiO2/H-diamond hetero-structures are calculated. It is revealed that there are considerable interface states at the interface of the anatase TiO2/diamond hetero-structure. By introducing H on the diamond surface, the interface states are significantly suppressed. A type-II alignment band structure is disclosed at the interface of the TiO2/diamond hetero-structure. The valence band offset increases from 0.6 to 1.7 eV when H is introduced at the TiO2/diamond interface

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed

Assembly of a high-dielectric constant thin TiOX layer directly on H-terminated semiconductor diamond

A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 µF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond MOSFETs are anticipated

Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

With the increasing power density and reduced size of the GaN-based electronic power converters, the heat dissipation in the devices becomes the key issue toward the real applications. Diamond, with the highest thermal conductivity among all the natural materials, is of the interest for integration with GaN to dissipate the generated heat from the channel of the AlGaN/GaN high electron mobility transistors (HEMTs). Current techniques involve three strategies to fabricate the GaN-on-diamond wafers: bonding of GaN with diamond, epitaxial growth of diamond on GaN, and epitaxial growth of GaN on diamond. As a result of the large lattice mismatch and thermal mismatch, the integration of GaN-on-diamond wafer is suffered from stress, bow, crack, rough interfaces, and large thermal boundary resistance. The interfaces with transition or buffer layers impede the heat flow from the device channel and greatly influence the device performance. In this review, we summarize the three different techniques to achieve the GaN-on-diamond wafers for the fabrication of AlGaN/GaN HEMTs. The problems and challenges of each method are discussed. In addition, the effective thermal boundary resistance between GaN and diamond, which characterizes the heat concentration, is analyzed with regard to different integration and measurement methods

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications

Different radial growth responses to climate warming by two dominant tree species at their upper altitudinal limit on Changbai Mountain

We analyzed the influence of climate change over the past 50 years on the radial growth of two tree species: Korean pine (Pinus koraiensis) and Yezo spruce (Picea jezoensis), located on Changbai Mountain, Northeast China, using a dendrochronology approach to understand factors that limit the altitude for tree species. Elevated temperatures increased the radial growth of Korean pine and decreased that of Yezo spruce. The positive response of tree growth to hydrothermal conditions was the key reason that the upper limit of elevation of Korean pine followed the temperature fluctuation pattern. Increased temperatures and precipitation and longer growing seasons accelerated Korean pine growth. As the temperature increased, correlations between Korean pine ring-width chronology and precipitation changed from negative to positive. In Yezo spruce, increasing monthly temperatures and inadequate precipitation during the middle and late parts of the growing season led to narrow growth rings, whereas decreasing monthly temperatures and sufficient precipitation during the late growing season promoted growth. Rising temperatures and adequate precipitation increases Korean pine growth, possibly elevating the upper range limit in altitude for this species. In contrast, Yezo spruce growth is negatively affected by warming temperatures and limited precipitation. Under future temperature increases and precipitation fluctuations, the upper limit altitude of Korean pine can reasonably be expected to shift upward and Yezo spruce downward

Exploring the Fungal Community and Its Correlation with the Physicochemical Properties of Chinese Traditional Fermented Fish (Suanyu)

Suanyu is a traditional natural fermented fish product from Southwest China that contains very complex microflora. The main purpose of this study was to explore the fungal community and its relationship with the physicochemical properties of Suanyu. The fungal community structure of Suanyu from the main provinces (Guizhou and Hunan) was studied via high-throughput sequencing. The correlation between dominant fungi and physicochemical characteristics was analyzed via Spearman’s correlation coefficient. The results showed that the pH value, total volatile base nitrogen content, and thiobarbituric acid reactive substance content ranges of Suanyu samples were 4.30–5.50, 17.11–94.70 mg/100 g, and 0.61 to 3.62 mg/kg, respectively. The average contents of total volatile base nitrogen, thiobarbituric acid reactive substance, and total BAs in Suanyu from Guizhou were lower than those from Hunan. The main BAs were phenethylamine, putrescine, cadaverine, histamine, and tyramine. Ascomycota was the dominant fungal phylum, and Kodamaea, Debaryomyces, Wallemia, Zygosaccharomyces, and unclassified Dipodascaceae were the dominant fungal genera in different samples. Moreover, high abundance levels of Kodamaea and Zygosaccharomyces were found in Suanyu from Guizhou. According to the correlation analysis, Kodamaea and Zygosaccharomyces were negatively correlated with TBARS (R2 = −0.43, −0.51) and TVBN (R2 = −0.37, −0.29), and unclassified Dipodascaceae was significant negatively correlated with tyramine (R2 = −0.56). This study expands the understanding of the fungal community and the fermentation characteristics of the dominant fungi in Suanyu