Thickness dependence of electron-electron interactions in topological p-n junctions

Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers.Comment: 38 pages, 5 figures, 1 tabl

Electrical resistance of individual defects at a topological insulator surface

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. The largest localized voltage drop we find to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared to the other defects

Nanoscale Near-Field Tomography of Surface States on (Bi(0.5)b(0.5))(2)Te-3

Three-dimensional topological insulators (TIs) have attracted tremendous interest for their possibility to host massless Dirac Fermions in topologically protected surface states (TSSs), which may enable new kinds of high-speed electronics. However, recent reports have outlined the importance of band bending effects within these materials, which results in an additional two-dimensional electron gas (2DEG) with finite mass at the surface. TI surfaces are also known to be highly inhomogeneous on the nanoscale, which is masked in conventional far-field studies. Here, we use near-field microscopy in the mid infrared spectral range to probe the local surface properties of customtailored (Bi0.5Sb0.5)(2)Te-3 structures with nanometer precision in all three spatial dimensions. Applying nanotomography and nanospectroscopy, we reveal a few-nanometer-thick layer of high surface conductivity and retrieve its local dielectric function without assuming any model for the spectral response. This allows us to directly distinguish between different types of surface states. An intersubband transition within the massive 2DEG formed by quantum confinement in the bent conduction band manifests itself as a sharp, surface-bound, Lorentzian-shaped resonance. An additional broadband background in the imaginary part of the dielectric function may be caused by the TSS. Tracing the intersubband resonance with nanometer spatial precision, we observe changes of its frequency, likely originating from local variations of doping or/and the mixing ratio between Bi and Sb. Our results highlight the importance of studying the surfaces of these novel materials on the nanoscale to directly access the local optical and electronic properties via the dielectric function

Metal-semimetal Schottky diode relying on quantum confinement

Quantum confinement in a semimetal thin film such as bismuth (Bi) can lead to a semimetal-to-semiconductor transition which allows for the use of semimetals as semiconductors when patterned at nanoscale lengths. Bi native oxide on Bi thin film grown by molecular beam epitaxy (MBE) is investigated using X-ray photoelectron spectroscopy (XPS) to measure the elemental composition of the oxide. Also, an in-situ argon plasma etch step is developed allowing for the direct coating of the surface of thin Bi films by a metal contact to form a Schottky junction. Model structures of rhombohedral [111] and [110] bismuth thin films are found from density functional theory (DFT) calculations. The electronic structure of the model thin films is investigated using a GW correction and the formation of an energy band gap due to quantum confinement is found. Electrical characterization of the fabricated Bi-metal Schottky diode confirms a band gap opening in Bi thin film for a film thickness of approximately 5 nm consistent with the theoretical calculations

Thickness dependence of electron-electron interactions in topological p-n junctions

Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers

Topological states and phase transitions in Sb2Te3-GeTe multilayers

Topological insulators (TIs) are bulk insulators with exotic ‘topologically protected’ surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes interact is lacking. Here, working with multilayers of the TI Sb2Te3 and the band insulator GeTe, we provide experimental evidence of multiple topological modes in a single Sb2Te3-GeTe-Sb2Te3 structure. Furthermore, we show that reducing the thickness of the GeTe layer induces a phase transition from a Dirac-like phase to a gapped phase. By comparing different multilayer structures we demonstrate that this transition occurs due to the hybridisation of states associated with different TI films. Our results demonstrate that the Sb2Te3-GeTe system offers strong potential towards manipulating topological states as well as towards controlledly inducing various topological phases

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3–4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al

Energy Flow in the Hadronic Final State of Diffractive and Non-Diffractive Deep-Inelastic Scattering at HERA

An investigation of the hadronic final state in diffractive and non--diffractive deep--inelastic electron--proton scattering at HERA is presented, where diffractive data are selected experimentally by demanding a large gap in pseudo --rapidity around the proton remnant direction. The transverse energy flow in the hadronic final state is evaluated using a set of estimators which quantify topological properties. Using available Monte Carlo QCD calculations, it is demonstrated that the final state in diffractive DIS exhibits the features expected if the interaction is interpreted as the scattering of an electron off a current quark with associated effects of perturbative QCD. A model in which deep--inelastic diffraction is taken to be the exchange of a pomeron with partonic structure is found to reproduce the measurements well. Models for deep--inelastic $ep$ scattering, in which a sizeable diffractive contribution is present because of non--perturbative effects in the production of the hadronic final state, reproduce the general tendencies of the data but in all give a worse description.Comment: 22 pages, latex, 6 Figures appended as uuencoded fil