Electrical resistivity and electronic structure of the Tb xGd 1-xNi 3 system

In the paper the electric properties and electronic structure of the intermetallic TbxGd1xNi3 compounds are presented. The partial replacement of Gd by Tb atoms causes the decrease of the Curie temperature (TC) and the increase of the residual resistivity. According to the Matthiessen rule the scattering mechanisms in (T) have been analyzed. Moreover, the reduced form of the electrical resistivity Z(T T0) indicates a deviation from the linearity for x > 0:2. This kind of behaviour can be attributed to density of d states near by the Fermi level (EF) which are dominated by Ni 3d states. The valence band spectra as well as the core level lines have been analyzed as the in uence of Tb/Gd substitution on the electronic structure

Magneto-history effect in the Tb xGd 1-xNi 3 Compounds

The compounds TbxGd1xNi3 with a PuNi3-type structure have been obtained. The magnetic properties have been investigated by using SQUID magnetometer (Quantum Design MPMS, temperature from 1.9 K to 300 K and magnetic eld up to 7 T). The partial replacement of Gd by Tb atoms is re ected in a decrease of the ordering temperature from 115 K (x = 0:0) to 81 K (x = 1:0) as well as the increase of the saturation magnetic moment MS from 6.93 B/f.u. (x = 0:0) to 7.14 B/f.u. (x = 1:0). A large di erence of M(T) curves has been noticed between the so-called eld cooling zero eld cooling magnetization. The thermomagnetic curves are sensitive to the applied magnetic eld and their origin can be understood as the domain-wall pinning e ect and as the temperature dependence of coercivity