Effect of season on early tomato growth and development rates.

Successive batches of tomato plants were raised throughout two years under ideal conditions in a glasshouse, and the intervals between sowing and the attainment of different stages in vegetative and reproductive growth were determined. The relationship between the season and the growing period was a simple one. There was a linear increase in the duration of the growing period between 21 September and 21 December, and a linear decrease between 21 December and 21 March. In the third season, from 21 March to 21 September, the growing period remained practically constant. The pattern of the relationship between the season and the growing period was maintained over a range of temperatures and light levels. Growth data from the literature for carnations, roses, radishes and lettuces under glass could be described in the same way. (Abstract retrieved from CAB Abstracts by CABI’s permission

Transport properties of an electron-hole bilayer/superconductor hybrid junction

We investigate the transport properties of a junction consisting of an electron-hole bilayer in contact with normal and superconducting leads. The electron-hole bilayer is considered as a semi-metal with two electronic bands. We assume that in the region between the contacts the system hosts an exciton condensate described by a BCS-like model with a gap $\Gamma$ in the quasiparticle density of states. We first discuss how the subgap electronic transport through the junction is mainly governed by the interplay between two kinds of reflection processes at the interfaces: The standard Andreev reflection at the interface between the superconductor and the exciton condensate, and a coherent crossed reflection at the semi-metal/exciton-condensate interface that converts electrons from one layer into the other. We show that the differential conductance of the junction shows a minimum at voltages of the order of $\Gamma/e$. Such a minimum can be seen as a direct hallmark of the existence of the gapped excitonic state

Metal-insulator transition and glassy behavior in two-dimensional electron systems

Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility (low-disorder) samples. The glass transition is manifested by a sudden and dramatic slowing down of the electron dynamics, and by a very abrupt change to the sort of statistics characteristic of complicated multistate systems. In particular, the behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.Comment: Contribution to conference on "Noise as a tool for studying materials" (SPIE), Santa Fe, New Mexico, June 2003; 15 pages, 12 figs. (includes some low-quality figs; send e-mail to get high-quality figs.

Scaling of nano-Schottky-diodes

A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a reduced (non-bulk) Schottky barrier height, this effect provides an explanation for several experimental observations of enhanced conduction in small Schottky diodes.Comment: 4 pages, 4 figures, accepted for publication in Appl. Phys. Lett., some minor additions and correction

Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2-islands grown on Si(111) with an STM-tip. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be about 10^4 times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and therefore a greatly increased contribution of tunneling to the electrical transport.Comment: 3 pages, 2 EPS-figures; accepted for publication in Appl. Phys. Let

Growth rates of tomato seedlings and seasonal radiation.

Over 3 years 34 sowings of tomato cv. Moneymaker were made at regular intervals and the plant fresh weight was determined once or twice a week until flowering. The daily growth percentages and the number of days required for plants to develop from 0.1 to 10 g fresh weight/plant were then related to the total radiation and average daily radiation for each of the growing periods and also to data from other trials. The length of the growing period up to attainment of 10 g fresh weight/plant was determined by the amount of irradiation in winter only; from the beginning of March until after mid-September the length of the growing period remained constant. The light efficiency and also the maximum growth rate of the plants in these trials were higher than those obtained in trials by other workers. Some batches of plants grew less rapidly than others despite adequate light, but the reasons for this are not known. (Abstract retrieved from CAB Abstracts by CABI’s permission

Superconducting quantum point contact with split gates in the two dimensional LaAlO3/SrTiO3 superfluid

One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel with certain transmission coefficients. It has been a long standing goal to achieve similar experimental conditions also in superconductors, only reached in atomic scale mechanically tunable break junctions of conventional superconducting metals, but here the Fermi wavelength is so short that it leads to a mixing of quantum transport with atomic orbital physics. Here we demonstrate for the first time the formation of a superconducting quantum point contact (SQPC) with split gate technology in a superconductor, utilizing the unique gate tunability of the two dimensional superfluid at the LaAlO3/SrTiO3 (LAO/STO) interface. When the constriction is tuned through the action of metallic split gates we identify three regimes of transport: (i) SQPC for which the supercurrent is carried only by a few quantum transport channels. (ii) Superconducting island strongly coupled to the equilibrium reservoirs. (iii) Charge island with a discrete spectrum weakly coupled to the reservoirs. Our experiments demonstrate the feasibility of a new generation of mesoscopic all-superconductor quantum transport devices.Comment: 18 page

Epitaxial aluminium-nitride tunnel barriers grown by nitridation with a plasma source

High critical current-density (10 to 420 kA/cm^2) superconductor-insulator-superconductor tunnel junctions with aluminium nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10^{-3} to 10^{-1} mbar. We find a much better reproducibility and control compared to previous work. From the current-voltage characteristics and cross-sectional TEM images it is inferred that, compared to the commonly used AlO_x barriers, the poly-crystalline AlN barriers are much more uniform in transmissivity, leading to a better quality at high critical current-densities.Comment: 3 pages, 3 figures, accepted for publication in AP