New Aspects of Design of Wide-Band Interference Coatings Based on Six-Layer Period

The paper proposes new approach top the design of wide-band interference filters with suppression adjacent stop-bands. The method of research of the multi-layered interference system, allowing to find the necessary of refractive indices of layers, is presented. The results described in communication open new possibilities for construction and calculation of devices based on thin film materials. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3545

Nanostructured NaBiTe2 thin films and their properties

Multicomponent chalcogenide-contained films are appeared as an interesting nonequilibrium thermodynamic system. Structural and electric field-induced characteristics of these materials are not investigated. The paper reports for the first time experimental data on growth, morphology and electrophysical properties of NaBiTe2 thin films. The investigated samples were condensed on glass substrates under deposition rate 0.1-0.5 nm/s at T = 300 K and vacuum level P = 10-3 Pa. Metal-semiconductor (MS) Cr/NaBiTe2 structures were prepared for electrical studies. Room-temperature time dependence of the current flowing through the investigated structure under applied electric field is also discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2054

Design of Broadband Optical Interference Filters Based on Six-Layer Period

The paper proposes new approach top the design of wide-band interference filters with suppression adjacent stop-bands. The method of research of the multi-layered interference system, allowing to find the necessary of refractive indices of layers, is presented. The results described in communication open new possibilities for construction and calculation of devices based on thin film materials. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3095

Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties

The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental investigations of microstructure and phase composition of thin films by transmission electron microscopy (TEM) and electron diffraction methods are carried out. Тhe experimental current-voltage dependences and transport of charge carriers are discussed

Substructural Features of Zn1-xMnxTe Solid Solution Thin Films

The substructural characteristics of Zn1-xMnxTe films deposited by closed space vacuum sublimation method under various condensation conditions are investigated. Sizes of the coherent scattering domain size, microdeformation degree, staking fault defects’ concentration in the condensates, the averaged dislocation density at the subgrain boundaries and in their bulk as well as the total dislocation concentration are determined by the physical broadening of the X-ray lines using the Cauchy and gauss approximations and the threefold function convolution method. The calculations are compared with data for undoped ZnTe. It is found out that the Mn-doping causes some degradation of structural characteristics of the condensates compared with undoped layers. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3505

Substructural features of Zn(1-x)Mn(x)Te solid solution thin films

В роботі проведене дослідження субструктурних характеристик плівок Zn(1-x)Mn(x)Te нанесених методом термічного випаровування у замкненому об’ємі при різних умовах конденсації. Розміри областей когерентного розсіювання (ОКР), рівень мікродеформацій, концентрація дефектів пакування в конденсатах, середня густина дислокацій на межах субзерен, в їх об’ємі та загальна визначені за фізичним уширенням дифракційних ліній з використанням апроксимації профілю рентгенівської лінії функціями Коші, Гауса та методом потрійної згортки функцій. Проведено порівняння результатів розрахунків з даними отриманими для нелегованих плівок ZnTe. Встановлено, що введення марганцю приводить до деякого погіршення субструктурних характеристик конденсатів порівняно з нелегованими шарами. При цитуванні документа, використовуйте посилання http://essuir.sumdu.edu.ua/handle/123456789/29352В работе проведено исследование субструктурных характеристик пленок Zn(1-x)Mn(x)Te нанесенных методом термического испарения в замкнутом объеме при различных условиях конденсации. Размеры областей когерентного рассеяния (ОКР), уровень микродеформаций, концентрация дефектов упаковки в конденсатах, средняя плотность дислокаций на границах субзерен, в их объеме и общая определены по физическим уширения дифракционных линий с использованием аппроксимации профиля рентгеновской линии функциями Коши, Гаусса и методом тройной свертки функций. Проведено сравнение результатов расчетов с данными полученными для нелегированных пленок ZnTe. Установлено, что введение марганца приводит к некоторому ухудшению субструктурного характеристик конденсатов по сравнению с нелегированной слоями. При цитировании документа, используйте ссылку http://essuir.sumdu.edu.ua/handle/123456789/29352The substructural characteristics of Zn(1-x)Mn(x)Te films deposited by closed space vacuum sublimation method under various condensation conditions are investigated. Sizes of the coherent scattering domain size, microdeformation degree, staking fault defects’ concentration in the condensates, the averaged dislo- cation density at the subgrain boundaries and in their bulk as well as the total dislocation concentration are determined by the physical broadening of the X-ray lines using the Cauchy and gauss approximations and the threefold function convolution method. The calculations are compared with data for undoped ZnTe. It is found out that the Mn-doping causes some degradation of structural characteristics of the condensates compared with undoped layers. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2935