Modifying germanium nanowires for future devices: an in situ TEM study

Germanium was of great interest in the 1950’s when it was used for the first transistor device. However, due to the water soluble and unstable oxide it was surpassed by silicon. Today, as device dimensions are shrinking the silicon oxide is no longer suitable due to gate leakage and other low-κ dielectrics such as Al2O3 and HfO2 are being used. Germanium (Ge) is a promising material to replace or integrate with silicon (Si) to continue the trend of Moore’s law. Germanium has better intrinsic mobilities than silicon and is also silicon fab compatible so it would be an ideal material choice to integrate into silicon-based technologies. The progression towards nanoelectronics requires a lot of in depth studies. Dynamic TEM studies allow observations of reactions to allow a better understanding of mechanisms and how an external stimulus may affect a material/structure. This thesis details in situ TEM experiments to investigate some essential processes for germanium nanowire (NW) integration into nanoelectronic devices; i.e. doping and Ohmic contact formation. Chapter 1 reviews recent advances in dynamic TEM studies on semiconductor (namely silicon and germanium) nanostructures. The areas included are nanowire/crystal growth, germanide/silicide formation, irradiation, electrical biasing, batteries and strain. Chapter 2 details the study of ion irradiation and the damage incurred in germanium nanowires. An experimental set-up is described to allow for concurrent observation in the TEM of a nanowire following sequential ion implantation steps. Grown nanowires were deposited on a FIB labelled SiN membrane grid which facilitated HRTEM imaging and facile navigation to a specific nanowire. Cross sections of irradiated nanowires were also performed to evaluate the damage across the nanowire diameter. Experiments were conducted at 30 kV and 5 kV ion energies to study the effect of beam energy on nanowires of varied diameters. The results on nanowires were also compared to the damage profile in bulk germanium with both 30 kV and 5 kV ion beam energies. Chapter 3 extends the work from chapter 2 whereby nanowires are annealed post ion irradiation. In situ thermal annealing experiments were conducted to observe the recrystallization of the nanowires. A method to promote solid phase epitaxial growth is investigated by irradiating only small areas of a nanowire to maintain a seed from which the epitaxial growth can initiate. It was also found that strain in the nanowire greatly effects defect formation and random nucleation and growth. To obtain full recovery of the crystal structure of a nanowire, a stable support which reduces strain in the nanowire is essential as well as containing a seed from which solid phase epitaxial growth can initiate. Chapter 4 details the study of nickel germanide formation in germanium nanostructures. Rows of EBL (electron beam lithography) defined Ni-capped germanium nanopillars were extracted in FIB cross sections and annealed in situ to observe the germanide formation. Chapter 5 summarizes the key conclusions of each chapter and discusses an outlook on the future of germanium nanowire studies to facilitate their future incorporation into nanodevices

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

In this article we detail the application of electron microscopy to visualise discrete structural transitions incurring in single crystalline Ge nanowires upon Ga-ion irradiation and subsequent thermal annealing. Sequences of images for nanowires of varying diameters subjected to an incremental increase of the Ga-ion dose were obtained. Intricate transformations dictated by a nanowire's geometry indicate unusual distribution of the cascade recoils in the nanowire volume, in comparison to planar substrates. Following irradiation, the same nanowires were annealed in the TEM and corresponding crystal recovery followed in situ. Visualising the recrystallisation process, we establish that full recovery of defect-free nanowires is difficult to obtain due to defect nucleation and growth. Our findings will have large implications in designing ion beam doping of Ge nanowires for electronic devices but also for other devices that use single crystalline nanostructured Ge materials such as thin membranes, nanoparticles and nanorods

Solvent vapor annealing of block copolymers in confined topographies: commensurability considerations for nanolithography

The directed self-assembly of block copolymer (BCP) materials in topographically patterned substrates (i.e., graphoepitaxy) is a potential methodology for the continued scaling of nanoelectronic device technologies. In this Communication, an unusual feature size variation in BCP nanodomains under confi nement with graphoepitaxially aligned cylinder-forming poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP) BCP is reported. Graphoepitaxy of PS- b -P4VP BCP line patterns (C II ) is accomplished via topography in hydrogen silsequioxane (HSQ) modified substrates and solvent vapor annealing (SVA). Interestingly, reduced domain sizes in features close to the HSQ guiding features are observed. The feature size reduction is evident after inclusion of alumina into the P4VP domains followed by pattern transfer to the silicon substrate. It is suggested that this nanodomain size perturbation is due to solvent swelling effects during SVA. It is proposed that using a commensurability value close to the solvent vapor annealed periodicity will alleviate this issue leading to uniform nanofins

Selective sidewall wetting of polymer blocks in hydrogen silsesquioxane directed self-assembly of PS-b-PDMS

We show the importance of sidewall chemistry for the graphoepitaxial alignment of PS-b-PDMS using prepatterns fabricated by electron beam lithography of hydrogen silsesquioxane (HSQ) and by deep ultraviolet (DUV) lithography on SiO2 thin films. Density multiplication of polystyrene-block-polydimethylsiloxane (PS-b-PDMS) within both prepatterns was achieved by using a room temperature dynamic solvent annealing environment. Selective tuning of PS and PDMS wetting on the HSQ template sidewalls was also achieved through careful functionalization of the template and substrate surface using either brush or a self-assembled trimethylsilyl monolayer. PDMS selectively wets HSQ sidewalls treated with a brush layer of PDMS, whiereas PS is found to selectively wet HSQ sidewalls treated with hexamethyldisilazane (HMDS) to produce a trimethylsilyl-terminated surface. The etch resistance of the aligned polymer was also evaluated to understand the implications of using block copolymer patterns which have high etch resistance, self-forming (PDMS) wetting layers at both interfaces. The results outlined in this work may have direct applications in nanolithography for continued device scaling toward the end-of-roadmap era

Fabrication of MoS2 nanowire arrays and layered structures via the self-assembly of block copolymers

The electronics industry is beginning to show interest in 2D molybdenum disulfide (2D‐MoS2) as a potential device material due to its low band gap and high mobility. However, current methods for its synthesis are not “fab” friendly and require harsh environments and processes. Here, a novel method to prepare MoS2 nanowire arrays and layered structures via self‐assembly of a block copolymer system is reported. Well‐controlled films of microphase separated line‐space nanopatterns have been achieved by solvent annealing process. The self‐assembled films are used as “templates” for the generation of nonstoichometric molybdenum oxide by in situ inclusion technique following UV/Ozone treatment. Well‐ordered array of MoS2 and a layered structure are then prepared by chemical vapor deposition using sulfur powder at lower temperature. The surface morphology, crystal structure, and phases are examined by different microscopic and spectroscopic techniques. This strategy can be extended to several other 2D materials systems and open the pathway toward better optoelectronic and nanoelectromechanical systems

Epitaxial post-implant recrystallization in germanium nanowires

As transistor dimensions continue to diminish, techniques for fabrication need to be adapted. In particular, crystal recovery post ion implantation is required due to destructive ion bombardment inducing crystal damage including amorphization. Here, we report a study on the post-implant recrystallization in germanium (Ge) nanowires (NWs) following gallium (Ga) ion doping. In this work a variation of NW diameters and orientations were irradiated and annealed in situ to investigate the mechanism of recrystallization. An added complication of misorientation of crystal grains increases the complexity of crystal recovery for suspended NWs. We show that when the misorientation is prevented, by leaving a crystal link between two seeds and providing a rigid support, recrystallization occurs primarily via solid phase epitaxial growth (SPEG). Finally, we demonstrate that top-down fabricated Ge NWs on insulator can be recovered with no extended defects. This work highlights both experimentally and through molecular dynamic simulations the importance of engineering crystal recovery in Ge NWs which may have potential for next-generation complementary metal-oxide semiconductor (CMOS) devices

Safety and efficacy of the ChAdOx1 nCoV-19 vaccine (AZD1222) against SARS-CoV-2: an interim analysis of four randomised controlled trials in Brazil, South Africa, and the UK.

BACKGROUND: A safe and efficacious vaccine against severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), if deployed with high coverage, could contribute to the control of the COVID-19 pandemic. We evaluated the safety and efficacy of the ChAdOx1 nCoV-19 vaccine in a pooled interim analysis of four trials. METHODS: This analysis includes data from four ongoing blinded, randomised, controlled trials done across the UK, Brazil, and South Africa. Participants aged 18 years and older were randomly assigned (1:1) to ChAdOx1 nCoV-19 vaccine or control (meningococcal group A, C, W, and Y conjugate vaccine or saline). Participants in the ChAdOx1 nCoV-19 group received two doses containing 5 × 1010 viral particles (standard dose; SD/SD cohort); a subset in the UK trial received a half dose as their first dose (low dose) and a standard dose as their second dose (LD/SD cohort). The primary efficacy analysis included symptomatic COVID-19 in seronegative participants with a nucleic acid amplification test-positive swab more than 14 days after a second dose of vaccine. Participants were analysed according to treatment received, with data cutoff on Nov 4, 2020. Vaccine efficacy was calculated as 1 - relative risk derived from a robust Poisson regression model adjusted for age. Studies are registered at ISRCTN89951424 and ClinicalTrials.gov, NCT04324606, NCT04400838, and NCT04444674. FINDINGS: Between April 23 and Nov 4, 2020, 23 848 participants were enrolled and 11 636 participants (7548 in the UK, 4088 in Brazil) were included in the interim primary efficacy analysis. In participants who received two standard doses, vaccine efficacy was 62·1% (95% CI 41·0-75·7; 27 [0·6%] of 4440 in the ChAdOx1 nCoV-19 group vs71 [1·6%] of 4455 in the control group) and in participants who received a low dose followed by a standard dose, efficacy was 90·0% (67·4-97·0; three [0·2%] of 1367 vs 30 [2·2%] of 1374; pinteraction=0·010). Overall vaccine efficacy across both groups was 70·4% (95·8% CI 54·8-80·6; 30 [0·5%] of 5807 vs 101 [1·7%] of 5829). From 21 days after the first dose, there were ten cases hospitalised for COVID-19, all in the control arm; two were classified as severe COVID-19, including one death. There were 74 341 person-months of safety follow-up (median 3·4 months, IQR 1·3-4·8): 175 severe adverse events occurred in 168 participants, 84 events in the ChAdOx1 nCoV-19 group and 91 in the control group. Three events were classified as possibly related to a vaccine: one in the ChAdOx1 nCoV-19 group, one in the control group, and one in a participant who remains masked to group allocation. INTERPRETATION: ChAdOx1 nCoV-19 has an acceptable safety profile and has been found to be efficacious against symptomatic COVID-19 in this interim analysis of ongoing clinical trials. FUNDING: UK Research and Innovation, National Institutes for Health Research (NIHR), Coalition for Epidemic Preparedness Innovations, Bill & Melinda Gates Foundation, Lemann Foundation, Rede D'Or, Brava and Telles Foundation, NIHR Oxford Biomedical Research Centre, Thames Valley and South Midland's NIHR Clinical Research Network, and AstraZeneca

Safety and efficacy of the ChAdOx1 nCoV-19 vaccine (AZD1222) against SARS-CoV-2: an interim analysis of four randomised controlled trials in Brazil, South Africa, and the UK

Background A safe and efficacious vaccine against severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), if deployed with high coverage, could contribute to the control of the COVID-19 pandemic. We evaluated the safety and efficacy of the ChAdOx1 nCoV-19 vaccine in a pooled interim analysis of four trials. Methods This analysis includes data from four ongoing blinded, randomised, controlled trials done across the UK, Brazil, and South Africa. Participants aged 18 years and older were randomly assigned (1:1) to ChAdOx1 nCoV-19 vaccine or control (meningococcal group A, C, W, and Y conjugate vaccine or saline). Participants in the ChAdOx1 nCoV-19 group received two doses containing 5 × 1010 viral particles (standard dose; SD/SD cohort); a subset in the UK trial received a half dose as their first dose (low dose) and a standard dose as their second dose (LD/SD cohort). The primary efficacy analysis included symptomatic COVID-19 in seronegative participants with a nucleic acid amplification test-positive swab more than 14 days after a second dose of vaccine. Participants were analysed according to treatment received, with data cutoff on Nov 4, 2020. Vaccine efficacy was calculated as 1 - relative risk derived from a robust Poisson regression model adjusted for age. Studies are registered at ISRCTN89951424 and ClinicalTrials.gov, NCT04324606, NCT04400838, and NCT04444674. Findings Between April 23 and Nov 4, 2020, 23 848 participants were enrolled and 11 636 participants (7548 in the UK, 4088 in Brazil) were included in the interim primary efficacy analysis. In participants who received two standard doses, vaccine efficacy was 62·1% (95% CI 41·0–75·7; 27 [0·6%] of 4440 in the ChAdOx1 nCoV-19 group vs71 [1·6%] of 4455 in the control group) and in participants who received a low dose followed by a standard dose, efficacy was 90·0% (67·4–97·0; three [0·2%] of 1367 vs 30 [2·2%] of 1374; pinteraction=0·010). Overall vaccine efficacy across both groups was 70·4% (95·8% CI 54·8–80·6; 30 [0·5%] of 5807 vs 101 [1·7%] of 5829). From 21 days after the first dose, there were ten cases hospitalised for COVID-19, all in the control arm; two were classified as severe COVID-19, including one death. There were 74 341 person-months of safety follow-up (median 3·4 months, IQR 1·3–4·8): 175 severe adverse events occurred in 168 participants, 84 events in the ChAdOx1 nCoV-19 group and 91 in the control group. Three events were classified as possibly related to a vaccine: one in the ChAdOx1 nCoV-19 group, one in the control group, and one in a participant who remains masked to group allocation. Interpretation ChAdOx1 nCoV-19 has an acceptable safety profile and has been found to be efficacious against symptomatic COVID-19 in this interim analysis of ongoing clinical trials

Solvent vapor annealing of block copolymers in confined topographies: commensurability considerations for nanolithography

The directed self-assembly of block copolymer (BCP) materials in topographically patterned substrates (i.e., graphoepitaxy) is a potential methodology for the continued scaling of nanoelectronic device technologies. In this Communication, an unusual feature size variation in BCP nanodomains under confi nement with graphoepitaxially aligned cylinder-forming poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP) BCP is reported. Graphoepitaxy of PS- b -P4VP BCP line patterns (C II ) is accomplished via topography in hydrogen silsequioxane (HSQ) modified substrates and solvent vapor annealing (SVA). Interestingly, reduced domain sizes in features close to the HSQ guiding features are observed. The feature size reduction is evident after inclusion of alumina into the P4VP domains followed by pattern transfer to the silicon substrate. It is suggested that this nanodomain size perturbation is due to solvent swelling effects during SVA. It is proposed that using a commensurability value close to the solvent vapor annealed periodicity will alleviate this issue leading to uniform nanofins

Fabrication of MoS2 nanowire arrays and layered structures via the self-assembly of block copolymers

The electronics industry is beginning to show interest in 2D molybdenum disulfide (2D‐MoS2) as a potential device material due to its low band gap and high mobility. However, current methods for its synthesis are not “fab” friendly and require harsh environments and processes. Here, a novel method to prepare MoS2 nanowire arrays and layered structures via self‐assembly of a block copolymer system is reported. Well‐controlled films of microphase separated line‐space nanopatterns have been achieved by solvent annealing process. The self‐assembled films are used as “templates” for the generation of nonstoichometric molybdenum oxide by in situ inclusion technique following UV/Ozone treatment. Well‐ordered array of MoS2 and a layered structure are then prepared by chemical vapor deposition using sulfur powder at lower temperature. The surface morphology, crystal structure, and phases are examined by different microscopic and spectroscopic techniques. This strategy can be extended to several other 2D materials systems and open the pathway toward better optoelectronic and nanoelectromechanical systems