13 research outputs found

    Magnetotransport Irreversibility in Single Crystalline La0.18Pr0.40Ca0.42MnO3 Thin Films

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    Magnetotransport irreversibility in single crystalline La0.18Pr0.40Ca0.42MnO3 thin films is probed with respect to intrinsic electronic phase separation (IEPS). Temperature-dependent magnetization and resistivity measurements show that (i) the high temperature non-hysteretic regime is dominated by the antiferromagnetic insulator (AFMI) and the charge ordered (CO) phases; (ii) at intermediate temperatures hysteretic regime is akin to a spin liquid; and (iii) the glass transition occurs at temperature T-g below which the spin liquid freezes. The suppression of the ferromagnetic and insulator-metal transitions (T-C and T-IM) during cooling confirms supercooled magnetic liquid. Magnetic field-dependent resistivity (rho-H) measured during cooling and warming highlights the differences in the spin-ordered structures through (i) reversible behavior at T T-IM (warming). The present study demonstrates that the scaling of area between the isothermal cooling and warming cycle rho-H curves with temperature mimics the rho-T behavior and hence also reflects the insulator-metal transition. The observed irreversibility and the area scaling in the different spin regimes have been explained in terms of the intrinsic electronic phase separation

    Spinal Dermoid and Epidermoid Cyst: An Institutional Experience and Clinical Insight into the Neural Tube Closure Models

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    Objectives The spinal dermoid and epidermoid cysts (SDECs) are rare entities comprising less than 1% of pediatric intraspinal tumors. The present study aims to extrapolate the clinicoradiological data, in order to identify the most plausible neural tube closure model in human and provide a retrospective representation from our clinical experience. Materials and Methods We collected the details of all histologically proven, newly diagnosed primary SDECs who underwent excision over the past 20 years. Secondary or recurrent lesions and other spinal cord tumors were excluded. Surgical and follow-up details of these patients as well as those with associated spinal dysraphism were reviewed. Clinical and radiological follow-up revealed the recurrence in these inborn spinal cord disorders. Results A total of 73 patients were included retrospectively, having a mean age of 22.4 ± 13.3 years, and 41 (56.2%) cases fell in the first two decades of life. Twenty-four (32.9%) dermoid and 49 (67.1%) epidermoid cysts comprised the study population and 20 of them had associated spinal dysraphism. The distribution of SDECs was the most common in lumbosacral region (n = 30) which was 10 times more common than in the sacral region (n = 3). Bladder dysfunction 50 (68.5%) and pain 48 (65.7%) were the most common presenting complaints. During follow-up visits, 40/48 (83.3%) cases showed sensory improvement while 11/16 (68.7%) regained normal bowel function. There was no surgical mortality with recurrence seen in eight till the last follow-up. Conclusions The protracted clinical course of the spinal inclusion cysts mandates a long-term follow-up. The results of our study support the multisite closure model and attempt to provide a retrospective reflection of neural tube closure model in humans by using SDECs as the surrogate marker of neural tube closure defect

    The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE

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    In this work, unintentionally doped GaN samples were prepared on GaN template by radio frequency (RF)-plasma MBE technique using two different RF-plasma powers. Photoluminescence (PL), steady state photoconductivity (PC) and ultrafast optical pump-probe spectroscopy measurements have been carried out to characterize the samples. The effect of RF-plasma power towards unintentional doping and giving rise to yellow luminescence (YL) is discussed. Our PC measurements show relatively faster decay for sample grown with higher RF-plasma power. In addition, the ultrafast optical pump-probe spectroscopy results show the presence of various defect levels with different relaxation times. A faster ultrafast relaxation time from the conduction band to the closest defect level and conduction band to the next defect level was observed for the sample grown with higher plasma power A comparatively low defect density and faster carrier relaxation observed in higher RF-plasma power grown samples is caused by lower impurities and gallium vacancies. The results imply that RF-plasma power is very important parameter for the growth of epitaxial GaN films and undesirable impurities and gallium vacancies might get incorporated in the epitaxial GaN films
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