3 research outputs found
Nanometer Thick Elastic Graphene Engine
Significant progress has been made
in the construction and theoretical
understanding of molecular motors because of their potential use.
Here, we have demonstrated fabrication of a simple but powerful 1
nm thick graphene engine. The engine comprises a high elastic membrane-piston
made of graphene and weakly chemisorbed ClF<sub>3</sub> molecules
as the high power volume changeable actuator, while a 532 nm LASER
acts as the ignition plug. Rapid volume expansion of the ClF<sub>3</sub> molecules leads to graphene blisters. The size of the blister is
controllable by changing the ignition parameters. The estimated internal
pressure per expansion cycle of the engine is about ∼10<sup>6</sup> Pa. The graphene engine presented here shows exceptional
reliability, showing no degradation after 10 000 cycles
Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms
Few-layer black phosphorus is a monatomic
two-dimensional crystal with a direct band gap that has high carrier
mobility for both holes and electrons. Similarly to other layered
atomic crystals, like graphene or layered transition metal dichalcogenides,
the transport behavior of few-layer black phosphorus is sensitive
to surface impurities, adsorbates, and adatoms. Here we study the
effect of Cu adatoms onto few-layer black phosphorus by characterizing
few-layer black phosphorus field effect devices and by performing
first-principles calculations. We find that the addition of Cu adatoms
can be used to controllably n-dope few layer black phosphorus, thereby
lowering the threshold voltage for n-type conduction without degrading
the transport properties. We demonstrate a scalable 2D material-based
complementary inverter which utilizes a boron nitride gate dielectric,
a graphite gate, and a single bP crystal for both the p- and n-channels.
The inverter operates at matched input and output voltages, exhibits
a gain of 46, and does not require different contact metals or local
electrostatic gating
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Tuning and Persistent Switching of Graphene Plasmons on a Ferroelectric Substrate
We characterized plasmon propagation
in graphene on thin films of the high-κ dielectric PbZr<sub>0.3</sub>Ti<sub>0.7</sub>O<sub>3</sub> (PZT). Significant modulation
(up to ±75%) of the plasmon wavelength was achieved with application
of ultrasmall voltages (< ±1 V) across PZT. Analysis of the
observed plasmonic fringes at the graphene edge indicates that carriers
in graphene on PZT behave as noninteracting Dirac Fermions approximated
by a semiclassical Drude response, which may be attributed to strong
dielectric screening at the graphene/PZT interface. Additionally,
significant plasmon scattering occurs at the grain boundaries of PZT
from topographic and/or polarization induced graphene conductivity
variation in the interior of graphene, reducing the overall plasmon
propagation length. Lastly, through application of 2 V across PZT,
we demonstrate the capability to persistently modify the plasmonic
response of graphene through transient voltage application