We characterized plasmon propagation
in graphene on thin films of the high-κ dielectric PbZr<sub>0.3</sub>Ti<sub>0.7</sub>O<sub>3</sub> (PZT). Significant modulation
(up to ±75%) of the plasmon wavelength was achieved with application
of ultrasmall voltages (< ±1 V) across PZT. Analysis of the
observed plasmonic fringes at the graphene edge indicates that carriers
in graphene on PZT behave as noninteracting Dirac Fermions approximated
by a semiclassical Drude response, which may be attributed to strong
dielectric screening at the graphene/PZT interface. Additionally,
significant plasmon scattering occurs at the grain boundaries of PZT
from topographic and/or polarization induced graphene conductivity
variation in the interior of graphene, reducing the overall plasmon
propagation length. Lastly, through application of 2 V across PZT,
we demonstrate the capability to persistently modify the plasmonic
response of graphene through transient voltage application
