INFRARED ELLPSOMETER/ POLARMETER SYSTEM, METHOD OF CALIBRATION, AND USE THEREOF

A sample system investigation system, such as an ellipsometer or polarimeter system, for use in investigating sample systems with electromagnetic wavelengths in the infrared range, and a calibration method for compensating nonidealities in multi-dimensional system rotated and non-rotated component representing matricies, are disclosed. An essentially achromatic compensator of dual-rhomb construction, which introduces a (3*LAMBDA/4) phase shift, but essentially no deviation in the direction of propagation of a polarized beam of electromagnetic wavelengths caused to pass there through, even when said compensator is caused to continuously rotate, is also disclosed

ELLIPSOMETER/POLARMETERBASED PROCESS MONITOR AND CONTROL SYSTEM SUITABLE FOR SIMULTANEOUS RETROFIT ON MOLECULAR BEAM EPITAXY SYSTEM RHEED/LEED INTERFACE SYSTEM, AND METHOD OF USE

A method of, and system for applying light beam producing systems, such as ellipsometers, polarimeters, polarized light reflectance and functionally similar systems, such that a beam of light produced thereby is caused to be incident upon a process element at an angle in excess of an associated Brewster angle while enabling the production of a signal sufficiently sensitive to changes in process element parameters, for use in real-time process element process monitoring and control, is disclosed. In addition, a process element processing system and electron beam producing system and light beam producing system combination system is taught, wherein the electron beam producing and light beam producing systems are mounted to the process element processing system (typically a (MBE) system), by input and output interface system present at a location appropriate for conventional Reflection High Energy Electron Diffraction (RHEED) systems

Empirical Correction for Spectroscopic Ellipsometric Measurements of Rough or Textured Surfaces

A method of applying spectroscopic ellipsometry to arrive at accurate values of optical and physical properties for thin films on samples having rough or textured surfaces

APPLICATION OF INTERMEDIATE WAVELENGTH BAND SPECTROSCOPIC ELLIPSOMETRY TO IN-STU. REAL TIME FABRICATION OF MULTIPLE LAYER ALTERNATING HGHALOW REFRACTIVE INDEX FILTERS

Disclosed is application of oblique angle of incidence, reflection and/or transmission mode spectroscopic ellipsometry PSI and/or DELTA, (including combinations thereof and/or mathematical equivalents), vs. wavelength data over an intermediate wavelength band range around a pass or reject band, to monitor and/or control fabrication of multiple layer high/low refractive index band-pass, band-reject and varied attenuation vs. wavelength thin film interference filters, either alone or in combination with transmissive non-ellipsometric electromagnetic beam turning point vs. layer data obtained at an essentially normal angle of incidence

APPLICATIONOFSPECTROSCOPIC ELLIPSOMETRY TO IN-STU. REAL-TIME FABRICATION OF MULTIPLE LAYER ALTERNATING HIGH/LOW REFRACTIVE INDEX FILTERS

Disclosed is application of oblique angle of incidence, reflection and/or transmission mode spectroscopic ellipsometry PSI and/or DELTA, (including combinations thereof and/or mathematical equivalents), vs. wavelength data to monitor and/or control fabrication of multiple layer high/low refractive index band-pass, band-reject and varied attenuation vs. wavelength filters, either alone or in combination with transmissive non-ellipsometric electromagnetic beam turning point vs. layer data obtained at an essentially normal angle of incidence

Ellipsometer

In an ellipsometer, a phase-modulated, polarized light beam is applied to a sample, electrical signals are obtained representing the orthogonal planes of polarization of the light after it has interacted with the sample and the constants of the sample are calculated from the two resulting electrical signals. The phase modulation is sufficiently small so that the calibration errors are negligible. For this purpose, the phase modulator, phase modulates the light within a range of no more than ten degrees peak to peak. The two electrical signals are expanded by Fourier analysis and the coefficients thereof utilized to calculate psi and delta

USE OF ELLIPSOMETRY AND SURFACE PLASMON RESONANCE IN MONITORING THIN FILM DEPOSITION OR REMOVAL FROM A SUBSTRATE SURFACE

Improved methodology for monitoring deposition or removal of material to or from a process and/or Wittness substrate Which demonstrates a negative e1 at some Wave length. The method involves detection of changes in P-polarized electromagnetism ellipsometric DELTA at SPR Resonance Angle-of-lncidence (A01) to monitor deposition of and/or removal of minute amounts of materials onto, or from, said process and/or Witness substrate. The methodology can optionally monitor ellipsometric PS1, and involves simultaneously or sequentially applying non-P-polarized electromagnetism at the same angle of incidence, or electromagnetic radiation of any polarization at a different angle-of-incidence and Wavelength to the process or Witt ness substrate and application of conventional ellipsometric analysis

Small modulation ellipsometry

In an ellipsometer, a phase-modulated, polarized light beam is applied to a sample, electrical signals are obtained representing the orthogonal planes of polarization of the light after it has interacted with the sample and the constants of the sample are calculated from the two resulting electrical signals. The phase modulation is sufficiently small so that the calibration errors are negligible. For this purpose, the phase modulator phase modulates the light within a range of no more than ten degrees modulations peak to peak. The two electrical signals are expanded by Fourier analysis and the coefficients thereof utilized to calculate psi and delta

SYSTEM AND METHOD FOR IMPROVING DATA ACQUISISTION CAPABILITY IN SPECTROSCOPIC ROTATABLE ELEMENT, ROTATING ELEMENT, MODULATION ELEMENT, AND OTHER ELLIPSOMETER AND POLARIMETER AND THE LIKE SYSTEMS

Disclosed is a System and method for controlling polarization State determining parameters of a polarized beam of light in an ellipSometer or polarimeter and the like System, (e.g. a modulation element ellipsometer System), So that they are in ranges wherein the Sensitivity, (of a Sample system characterizing PSI and DELTA value monitoring detector used to measure changes in Said polarization State resulting from interaction with a “composite Sample System,” comprised of a Sample System per Se.. and a beam polarization State determining variable retarder, to noise and measurement errors etc. therein), is reduced. The present invention allows determining Sample System per Se.. characterizing PSI and DELTA values, from Composite Sample System characterizing PSI and DELTA values, by compensating for the presence of present invention components, (VR1) and/or VR2), added to an ellipsometer or polarimeter and the like System. The present invention also improves the ability of an ellipSometer or polarimeter and the like System fitted with present invention components (VR1) and/or (VR2) to provide uSably accurate and precise Sample System characterizing PSI and DELTA determining data values, wherein a Sample System per Se.. investigating polarized beam of light is oriented at other than a Principal or Brewster Angle of Incidence thereto, the use of which Angle of Incidence would otherwise be difficult, if not impossible. Practice of the present invention also allows determination of the “Handedness” of a polarized beam of light, and of sample system Jones or Mueller Matrix component values. As well, the present invention provides means for making System components (VR1) and/or (VR2) added to an ellipsometer or components (VR1) and/or (VR2) added to an ellipsometer or parent when desired, without removal thereof from said ellipsometer or polarimeter System

AUTOMATED ELLIPSOMETER AND THE LIKE SYSTEMS

Systems and methodology for orienting the tip/tilt and vertical height of samples, preferably automated, as applied in ellipsometer and the like systems