130 research outputs found
Growth Route Toward III-V Multispectral Solar Cells on Silicon
To date, high efficiency multijunction solar cells have been developed on Ge
or GaAs substrates for space applications, and terrestrial applications are
hampered by high fabrication costs. In order to reduce this cost, we propose a
breakthrough technique of III-V compound heteroepitaxy on Si substrates without
generation of defects critical to PV applications. With this technique we
expect to achieve perfect integration of heterogeneous Ga1-xInxAs
micro-crystals on Si substrates. In this paper, we show that this is the case
for x=0. GaAs crystals were grown by Epitaxial Lateral Overgrowth on Si (100)
wafers covered with a thin SiO2 nanostructured layer. The cristallographic
structure of these crystals is analysed by MEB and TEM imaging. Micro-Raman and
Micro-Photomuminescence spectra of GaAs crystals grown with different
conditions are compared with those of a reference GaAs wafer in order to have
more insight on eventual local strains and their cristallinity. This work aims
at developping building blocks to further develop a GaAs/Si tandem demonstrator
with a potential conversion efficiency of 29.6% under AM1.5G spectrum without
concentration, as inferred from our realistic modeling. This paper shows that
Epitaxial Lateral Overgrowth has a very interesting potential to develop
multijunction solar cells on silicon approaching the today 30.3% world record
of a GaInP/GaAs tandem cell under the same illumination conditions, but on a
costlier substrate than silicon.Comment: Preprint of the 28th EUPVSEC proceedings, September 2013, Paris,
France. (5 pages
Two-Photon luminescence microscopy for depth profiling of photovoltaic materials
International audienc
SiC tools for reliability study
International audienceUnderstanding the failure mechanisms is essential to ensure reliability for a new technology of semiconductors. Amongst various existing tools dedicated to silicon-based devices, there is no consensual method for silicon carbide (SiC) devices. This semiconductor offers very interesting properties for power electronics in comparison with Si, but these failures are different and need to be studied. This paper will compare different methods applied to failures, focusing on lock-in thermography and micro-Raman analysis. Three devices have been evaluated, a vertical diode, a lateral diode and a MESFET
Raman microspectroscopy of Cu2ZnSnS4 (CZTS): study of inhomogeneity
International audienceLa fabrication de cellules photovoltaĂŻques Ă base de matĂ©riaux non toxiques et abondants sur terre est un enjeu majeur pour le dĂ©veloppement des Ă©nergies renouvelables en gĂ©nĂ©rale, et du photovoltaĂŻque en particulier. Lâutilisation de matĂ©riaux semi-conducteurs en couches mines Ă base du composĂ© Cu2ZnSnS4 (CZTS) comme absorbeur de lumiĂšre, constitue une des voies les plus prometteuses.Une des particularitĂ©s des cellules Ă base de CZTS est la prĂ©sence dâun certain degrĂ© dâinhomogĂ©nĂ©itĂ© locale en composition et/ou en structure. Cette inhomogĂ©nĂ©itĂ© pourrait avoir des consĂ©quences bĂ©nĂ©fiques ou nĂ©fastes sur les performances photovoltaĂŻques. Dans ce travail, nous prĂ©sentons, dâune part, des rĂ©sultats de microspectroscopie Raman obtenus sur des matĂ©riaux en couches minces Cu2ZnSnS4 (CZTS), et dâautre part, des rĂ©sultats de performances photovoltaĂŻques obtenus avec des cellules Ă base de CZTS. Les spectres de Microspectroscopie Raman ont Ă©tĂ© confrontĂ©s Ă ceux obtenus avec des cristaux de CZTS. Ce qui nous a permis de mettre en Ă©vidence la prĂ©sence de phases secondaires, qui pourraient expliquer les faibles valeurs de tension de circuit ouvert observĂ©es avec des cellules photovoltaĂŻques
Effets du tennis sur les tissus musculaires et osseux : cas particulier du membre supérieur
Ducher Gaële, Jaffré Christelle, Arlettaz Alexandre, Courteix Daniel. Effets du tennis sur les tissus musculaires et osseux : cas particulier du membre supérieur. In: Les Cahiers de l'INSEP, n°35, 2005. Les sports de raquette. Données scientifiques et méthodologiques. Applications pour l'entraßnement. pp. 227-228
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