New Perspective on Passively Quenched Single Photon Avalanche Diodes: Effect of Feedback on Impact Ionization

Single-photon avalanche diodes (SPADs) are primary devices in photon counting systems used in quantum cryptography, time resolved spectroscopy and photon counting optical communication. SPADs convert each photo-generated electron hole pair to a measurable current via an avalanche of impact ionizations. In this paper, a stochastically self-regulating avalanche model for passively quenched SPADs is presented. The model predicts, in qualitative agreement with experiments, three important phenomena that traditional models are unable to predict. These are: (1) an oscillatory behavior of the persistent avalanche current; (2) an exponential (memoryless) decay of the probability density function of the stochastic quenching time of the persistent avalanche current; and (3) a fast collapse of the avalanche current, under strong feedback conditions, preventing the development of a persistent avalanche current. The model specifically captures the effect of the load’s feedback on the stochastic avalanche multiplication, an effect believed to be key in breaking today’s counting rate barrier in the 1.55–μm detection window

Dependence of the Performance of Single Photon Avalanche Diodes on the Multiplication Region Width

The dependence of the performance of separate-absorption-multiplication (SAM) single-photon avalanche diodes (SPADs) on the width of the multiplication region is theoretically investigated. The theory is applied to SAM SPADs with InP homojunction multiplication regions and InAlAs-InP heterojunction multiplication regions. In both cases the absorber layer is InGaAs. Two scenarios for the dark counts are considered: (i) low-temperature operation, when the number of dark carriers is dominated by field-assisted mechanisms of band-to-band tunneling and tunneling through defects; and (ii) room-temperature operation, when the number of dark carriers in the multiplication region is dominated by the generation/recombination mechanism. The analysis utilizes a generalized theory for breakdown probability, which takes into account the random locations where dark and photogenerated carriers are produced in each layer. Depending upon the detector temperature, as the width of the multiplication region is increased the effects from the reduction in the number of dark carriers due to field-assisted generation mechanisms are counteracted by the effects from the elevation in the number of generation/recombination dark carriers. Thus, there exists an optimal width of the multiplication region that achieves the best performance of the SPAD

Free Running Single Photon Detection based on a negative feedback InGaAs APD

InGaAs/InP-based semiconductor avalanche photodiode are usually employed for single-photon counting at telecom wavelength. However they are affected by afterpulsing which limits the diode performance. Recently, Princeton Lightwave has commercialised a diode integrating monolithically a feedback resistor. This solution effectively quenches the avalanche and drastically reduces afterpulsing. Here, we report the development and characterization of a detector module based on this diode, implementing an active hold-off circuit which further reduces the afterpulsing and notably improves the detector performances. We demonstrate free-running operation with 600 Hz dark count rate at 10% detection efficiency. We also improved the standard double-window technique for the afterpulsing characterization. Our algorithm implemented by a FPGA allows to put the APD in a well-defined initial condition and to measure the impact of the higher order afterpulses.Comment: 18 pages, 15 figures. Submitted to Journal of Modern Optic

An Ultra-Low Noise Telecom Wavelength Free Running Single Photon Detector Using Negative Feedback Avalanche Diode

It is challenging to implement genuine free running single photon detectors for the 1550 nm wavelength range with simultaneously high detection efficiency (DE), low dark noise, and good time resolution. We report a novel read out system for the signals from a negative feedback avalanche diode (NFAD) which allows useful operation of these devices at a temperature of 193 K and results in very low dark counts (~100 CPS), good time jitter (~30 ps), and good DE (~10%). We characterized two NFADs with a time correlation method using photons generated from weak coherent pulses (WCP) and photon pairs produced by spontaneous parametric down conversion (SPDC). The inferred detector efficiencies for both types of photon sources agree with each other. The best noise equivalent power of the device is estimated to be 8.1 x 10^(-18) W Hz^(-1/2), more than 10 times better than typical InP/InGaAs SPADs show in free running mode. The afterpulsing probability was found to be less than 0.1% per ns at the optimized operating point. In addition, we studied the performance of an entanglement-based quantum key distribution (QKD) using these detectors and develop a model for the quantum bit error rate (QBER) that incorporates the afterpulsing coefficients. We verified experimentally that using these NFADs it is feasible to implement QKD over 400 km of telecom fibre. Our NFAD photon detector system is very simple, and is well suited for single-photon applications where ultra-low noise and free-running operation is required, and some afterpulsing can be tolerated.Comment: 28 pages, 16 figures, and 1 tabl

InGaAsP Avalanche Photodetectors for Non-Gated 1.06 micrometer Photon-Counting Receivers

The efficient detection of single photons at 1.06 micron is of considerable interest for lidar/ladar systems designed for remote sensing an d ranging as well as for free-space optical transmission in photon-st arved applications. However, silicon-based single photon avalanche diodes (SPADs) used at shorter wavelengths have very low single photon d etection efficiency (approximately 1 - 2%) at 1.06 micron, and InP/In GaAs SPADs designed for telecommunications wavelengths near 1.5 micro n exhibit high dark count rates that generally inhibit non-gated (free-running) operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 micron, we have developed high performance , large area (80 - 200 micron diameter) InP-based InGaAsP quaternary absorber SPADs optimized for operation at 1.06 micron and based on a highly reliable planar geometry avalanche photodiode structure. We wil l show that dark count rates are sufficiently low to allow for non-ga ted operation while achieving detection efficiencies far surpassing t hose found for Si SPADs. At a detection efficiency of 10%, 80 micron diameter devices exhibit dark count rates below 1000 Hz and count rate s of at least 3 MHz when operated at -40 C. Significantly higher dete ction efficiencies (30 - 50%) are achievable with acceptable tradeoff s in dark count rate. In this paper, we will also discuss performance modeling for these devices and compare their behavior with longer wav elength InP-based InGaAs ternary absorber SPADs fabricated on a relat ed device design platform

High Efficiency Planar Geometry Germanium-on-silicon Single-photon Avalanche Diode Detectors

This paper presents the performance of 26 μm and 50 μm diameter planar Ge-on-Si single-photon avalanche diode (SPAD) detectors. The addition of germanium in these detectors extends the spectral range into the short-wave infrared (SWIR) region, beyond the capability of already well-established Si SPAD devices. There are several advantages for extending the spectral range into the SWIR region including: reduced eye-safety laser threshold, greater attainable ranges, and increased depth resolution in range finding applications, in addition to the enhanced capability to image through obscurants such as fog and smoke. The time correlated single-photon counting (TCSPC) technique has been utilized to observe record low dark count rates, below 100 kHz at a temperature of 125 K for up to a 6.6 % excess bias, for the 26 μm diameter devices. Under identical experimental conditions, in terms of excess bias and temperature, the 50 μm diameter device consistently demonstrates dark count rates a factor of 4 times greater than 26 μm diameter devices, indicating that the dark count rate is proportional to the device volume. Single-photon detection efficiencies of up to ~ 29 % were measured at a wavelength of 1310 nm at 125 K. Noise equivalent powers (NEP) down to 9.8 × 10-17 WHz-1/2 and jitters < 160 ps are obtainable, both significantly lower than previous 100 μm diameter planar geometry devices, demonstrating the potential of these devices for highly sensitive and high-speed imaging in the SWIR

Fluxoid quantization in disordered, quasiperiodic, and anisotropic superconducting networks

The quantization of the magnetic fluxoid in the unit cells of a network of superconducting wires gives rise to a system with competing length scales determined by the resulting fluxoid lattice and the underlying network. This system provides an excellent experimental model for studying questions concerning the concept of commensurability, and the first emphasis of this thesis is on the formation of commensurate states in disordered and quasiperiodic geometries. Measurements of the resistive phase boundary T\sb{c}(H)\vert\sb{R} reveal cusp-like structure signifying the existence of commensurate states at particular values of the applied field. We find that sufficient disorder in the tile areas will destroy all commensurate states in any network, and we accurately describe this behavior using the intuitive J\sp2 model in which one considers only the effects of supercurrents generated to satisfy fluxoid quantization (i.e., the London approximation). However, a disturbance of the local tile ordering (such as phason disordering in quasiperiodic geometries) destroy only certain types of commensurate states. We find that commensurability is not universally predicated by the presence of inflation symmetry in the lattice, but instead is more closely related to the Fourier transform of the lattice geometry. These experimental results in two dimensions are similar to analytical results for one-dimensional systems. Because the description of the superconducting networks using linearized Ginzburg-Landau theory is identical to a Schrodinger equation, these systems can be used to study the nature of electronic ground states on a two-dimensional lattice in a magnetic field. The second emphasis of this thesis addresses this problem in width-anisotropic square networks. Using resistance and ac susceptibility measurements, we find evidence that network anisotropy induces localization of the superconducting order parameter in one direction at incommensurate fields (as has been predicted for one-dimensional quasiperiodic systems) while in the perpendicular direction the order parameter remains extended

Advances in InGaAs/InP single-photon detector systems for quantum communication

Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III–V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching techniques are summarized

Planar Geometry Ge-on-Si SPAD Detectors for the Short-wave Infrared

We present innovative planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors. These devices provide picosecond timing resolution for applications operating in the short-wave infrared wavelength region such as quantum communication technologies and three-dimensional imaging. This new planar design successfully reduces the undesirable contribution of surface defects to the dark current. This has allowed for the use of large excess biases, resulting in a single-photon detection efficiency of 38% when operated at 125 K using 1310 nm wavelength illumination. A record low noise equivalent power of 2 × 10-16 WHz-1/2 was achieved, more than a fifty-fold improvement compared to the previous best Ge-on-Si mesa geometry SPADs when operated under similar conditions. These Ge-on-Si SPAD detectors have operated in the range of 77 K to 175 K, and we will discuss ways in which the operating temperature can be raised to that consistent with Peltier cooling. We will present analysis of Ge-on-Si SPADs, which has revealed much reduced afterpulsing compared with SPAD detectors in other material systems. Laboratory trials have demonstrated these Ge-on-Si SPAD devices in short-range LIDAR and depth profiling measurements. Estimations of the performance of these detectors in longer range measurements will be presented. We will discuss the potential for the development of high efficiency arrays of Ge-on-Si SPADs for the use in eye-safe automotive LIDAR and quantum technology applications