From Laser Induced Line Narrowing To Electromagnetically Induced Transparency: Closed System Analysis

Laser induced line narrowing effect, discovered more than thirty years ago, can also be applied to recent studies in high resolution spectroscopy based on electromagnetically induced transparency. In this paper we first present a general form of the transmission width of electromagnetically induced transparency in a homogeneously broadened medium. We then analyze a Doppler broadened medium by using a Lorentzian function as the atomic velocity distribution. The dependence of the transmission linewidth on the driving field intensity is discussed and compared to the laser induced line narrowing effect. This dependence can be characterized by a parameter which can be regarded as ``the degree of optical pumping''.Comment: 8 pages, 5 figure

Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management

We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V-1 s-1 at 2 K and carrier density as low as 2.0 x 10^18cm-3 (~ 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy.Comment: 13 pages, 4 figure

Stoichiometry control of the electronic properties of the LaAlO_3/SrTiO_3 heterointerface

We investigate the effect of the laser parameters of pulsed laser deposition on the film stoichiometry and electronic properties of LaAlO_3/SrTiO_3 (001) heterostructures. The La/Al ratio in the LaAlO_3 films was varied over a wide range from 0.88 to 1.15, and was found to have a strong effect on the interface conductivity. In particular, the carrier density is modulated over more than two orders of magnitude. The film lattice expansion, caused by cation vacancies, is found to be the important functional parameter. These results can be understood to arise from the variations in the electrostatic boundary conditions, and their resolution, with stoichiometry.Comment: 4 pages, 3 figures, submitted for publicatio

Distributed collaboration between industry and university partners in HE

Over the past three years the School of Design has been experimenting with an innovative curriculum design and delivery model named ‘the Global Studio’. The Global Studio is a cross-institutional research informed teaching and learning collaboration conducted between Northumbria University and international universities and industry partners based in the UK, USA, Netherlands and Korea. The aims of the Global Studio are directly linked with current and future industry needs that are related to changes in the organisation of product and service development. These changes highlight the importance of equipping design students with skills for working in globally networked organisations particularly the development of skills in intercultural communication and collaboration. In this paper we will focus on the Global Studio conducted in 2008 which included Northumbria University (UK), Hongik University (Korea), Auburn University (USA), Intel (USA), Motorola design studios located in the UK and Korea and Great Southern Wood (USA). These projects will be used to illustrate challenges and benefits of international collaborative industry-based projects undertaken in distributed settings

Charge writing at the LaAlO3/SrTiO3 surface

Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO3/SrTiO3 interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO3 thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO3, providing experimental evidence for a theoretically predicted built-in potential.Comment: 12 pages, 4 figures, plus supplementary information, submitted to Nano Letter

Fermi surface and superconductivity in low-density high-mobility {\delta}-doped SrTiO3

The electronic structure of low-density n-type SrTiO3 delta-doped heterostructures is investigated by angular dependent Shubnikov-de Haas oscillations. In addition to a controllable crossover from a three- to two-dimensional Fermi surface, clear beating patterns for decreasing dopant layer thicknesses are found. These indicate the lifting of the degeneracy of the conduction band due to subband quantization in the two-dimensional limit. Analysis of the temperature-dependent oscillations shows that similar effective masses are found for all components, associated with the splitting of the light electron pocket. The dimensionality crossover in the superconducting state is found to be distinct from the normal state, resulting in a rich phase diagram as a function of dopant layer thickness.Comment: 4 pages, 5 figures, submitted for publicatio

Structural origins of the properties of rare earth nickelate superlattices

NiO6 octahedral tilts in the LaNiO3/SrTiO3 superlattices are quantified using position averaged convergent beam electron diffraction in scanning transmission electron microscopy. It is shown that maintaining oxygen octahedra connectivity across the interface controls the octahedral tilts in the LaNiO3 layers, their lattice parameters and their transport properties. Unlike films and layers that are connected on one side to the substrate, subsequent LaNiO3 layers in the superlattice exhibit a relaxation of octahedral tilts towards bulk values. This relaxation is facilitated by correlated tilts in SrTiO3 layers and is correlated with the conductivity enhancement of the LaNiO3 layers in the superlattices relative to individual films.Comment: Accepted for publication in Physical Review B (Rapid Communication

Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface

Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost five times as large as the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.Comment: 4 pages, 4 figure

Science Star over Asia

The founding director of Singapore's Institute of Molecular and Cell Biology illustrates the rise of science in Asia