First direct observation of Dirac fermions in graphite

Originating from relativistic quantum field theory, Dirac fermions have been recently applied to study various peculiar phenomena in condensed matter physics, including the novel quantum Hall effect in graphene, magnetic field driven metal-insulator-like transition in graphite, superfluid in 3He, and the exotic pseudogap phase of high temperature superconductors. Although Dirac fermions are proposed to play a key role in these systems, so far direct experimental evidence of Dirac fermions has been limited. Here we report the first direct observation of massless Dirac fermions with linear dispersion near the Brillouin zone (BZ) corner H in graphite, coexisting with quasiparticles with parabolic dispersion near another BZ corner K. In addition, we report a large electron pocket which we attribute to defect-induced localized states. Thus, graphite presents a novel system where massless Dirac fermions, quasiparticles with finite effective mass, and defect states all contribute to the low energy electronic dynamics.Comment: Nature Physics, in pres

Angle-resolved photoemission spectroscopy of the cuprate superconductors

This paper reviews the most recent ARPES results on the cuprate superconductors and their insulating parent and sister compounds, with the purpose of providing an updated summary of the extensive literature in this field. The low energy excitations are discussed with emphasis on some of the most relevant issues, such as the Fermi surface and remnant Fermi surface, the superconducting gap, the pseudogap and d-wave-like dispersion, evidence of electronic inhomogeneity and nano-scale phase separation, the emergence of coherent quasiparticles through the superconducting transition, and many-body effects in the one-particle spectral function due to the interaction of the charge with magnetic and/or lattice degrees of freedom. The first part of the paper introduces photoemission spectroscopy in the context of strongly interacting systems, along with an update on the state-of-the-art instrumentation. The second part provides a brief overview of the scientific issues relevant to the investigation of the low energy electronic structure by ARPES. The rest of the paper is devoted to the review of experimental results from the cuprates and the discussion is organized along conceptual lines: normal-state electronic structure, interlayer interaction, superconducting gap, coherent superconducting peak, pseudogap, electron self energy and collective modes. Within each topic, ARPES data from the various copper oxides are presented.Comment: Reviews of Modern Physics, in press. A HIGH-QUALITY pdf file is available at http://www.physics.ubc.ca/~damascel/RMP_ARPES.pd

Himpsel, Franz oral history transcript

Transcript of an oral history with Franz Himpsel, co-director and user of, the Synchrotron Radiation Center. Conducted by Eric Verbeten

Himpsel, Franz oral history

Oral history with Franz Himpsel, co-director and user of, the Synchrotron Radiation Center. Conducted by Eric Verbeten

n-GaN surface treatments for metal contacts studied via X-ray photoemission spectroscopy

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Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Iso- lation: A XAS and EELS Study

ABSTRACT The use of low dielectric constant materials in the on-chip interconnect process reduces interconnect delay, power dissipation and crosstalk noise. To achieve the requirements of the ITRS for 2007-2009 minimal sidewall damage from etch, ash or cleans is required. In chemical vapor deposited (CVD) organo-silicate glass (OSG) which are used as intermetal dielectric (IMD) materials the substitution of oxygen in SiO 2 by methyl groups (-CH 3 ) reduces the permittivity significantly (from 4.0 in SiO 2 to 2.6-3.3 in the OSG), since the electronic polarizability is lower for Si-C bonds than for Si-O bonds. However, plasma processing for resist stripping, trench etching and post-etch cleaning removes C and H containing molecular groups from the near-surface layer of OSG. Therefore, compositional analysis and chemical bonding characterization of structured IMD films with nanometer resolution is necessary for process optimization. OSG thin films as-deposited and after plasma treatment are studied using X-ray absorption spectroscopy (XAS) and electron energy loss spectroscopy (EELS). In both techniques, the fine structure near the C1s absorption or energy loss edge, respectively, allows to identify C-H, C-C, and C-O bonds. This gives the opportunity to differentiate between individual low-k materials and their modifications. The O1s signal is less selective to individual bonds. XAS spectra have been recorded for non-patterned films and EELS spectra for patterned structures. The chemical bonding is compared for as-deposited and plasma-treated low-k materials. The Fluorescence Yield (FY) and the Total Electron Yield (TEY) recorded while XAS measurement are compared. Examination of the C 1s near-edge structures reveal a modified bonding of the remaining C atoms in the plasma-treated sample regions

Chemical bonding and electronic properties of SeS2-treated GaAs(100)

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In situ metallization of patterned polymer brushes created by molecular transfer print and fill

A chemical pattern consisting of end-grafted polystyrene brushes (20 nm lines on a 40 nm pitch) on the native oxide of silicon wafers was defined by molecular transfer printing from assembled block co-polymer films. End-grafted hydroxyl-terminated poly(2-vinyl pyridine) brushes were selectively deposited in the interspatial regions. The poly(2-vinyl pyridine) regions selectively sequester acidic HAuCl4 from solution and form arrays of small Au nanoparticles upon exposure to oxygen plasma within the confines of the macromolecular brush layer. This print and fill process to pattern polymer brushes is a generalizable strategy to create functional chemical surface patterns. Online supplementary data available from stacks.iop.org/Nano/24/155602/mmedi