1,982 research outputs found

    Materials processing in space: Early experiments

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    The characteristics of the space environment were reviewed. Potential applications of space processing are discussed and include metallurgical processing, and processing of semiconductor materials. The behavior of fluid in low gravity is described. The evolution of apparatus for materials processing in space was reviewed

    Compressive behavior of titanium alloy skin-stiffener specimens selectively reinforced with boron-aluminum composite

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    A method of selectively reinforcing a conventional titanium airframe structure with unidirectional boron-aluminum composite attached by brazing was successfully demonstrated in compression tests of short skin-stiffener specimens. In a comparison with all-titanium specimens, improvements in structural performance recorded for the composite-reinforced specimens exceeded 25 percent on an equivalent-weight basis over the range from room temperature to 700 K (800 F) in terms of both initial buckling and maximum strengths. Performance at room temperature was not affected by prior exposure at 588 K (600 F) for 1000 hours in air or by 400 thermal cycles between 219 K and 588 K (-65 F and 600 F). The experimental results were generally predictable from existing analytical procedures. No evidence of failure was observed in the braze between the boron-aluminum composite and the titanium alloy

    Research on boron filaments and boron reinforced composites

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    Boron filaments for use as reinforcing phase in composite materials for aerospace structure

    An exact study of charge-spin separation, pairing fluctuations and pseudogaps in four-site Hubbard clusters

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    An exact study of charge-spin separation, pairing fluctuations and pseudogaps is carried out by combining the analytical eigenvalues of the four-site Hubbard clusters with the grand canonical and canonical ensemble approaches in a multidimensional parameter space of temperature (T), magnetic field (h), on-site interaction (U) and chemical potential. Our results, near the average number of electrons =3, strongly suggest the existence of a critical parameter U_{c}(T) for the localization of electrons and a particle-hole binding (positive) gap at U>U_{c}(T), with a zero temperature quantum critical point, U_{c}(0)=4.584. For U<U_{c}(T), particle-particle pair binding is found with a (positive) pairing gap. The ground state degeneracy is lifted at U>U_c(T) and the cluster becomes a Mott-Hubbard like insulator due to the presence of energy gaps at all (allowed) integer numbers of electrons. In contrast, for U< U_c(T), we find an electron pair binding instability at finite temperature near =3, which manifests a possible pairing mechanism, a precursor to superconductivity in small clusters. In addition, the resulting phase diagram consisting of charge and spin pseudogaps, antiferromagnetic correlations, hole pairing with competing hole-rich (=2), hole-poor (=4) and magnetic (=3) regions in the ensemble of clusters near 1/8 filling closely resembles the phase diagrams and inhomogeneous phase separation recently found in the family of doped high T_c cuprates.Comment: 10 pages, 7 figure

    Dewetting of an ultrathin solid film on a lattice-matched or amorphous substrate

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    An evolution partial differential equation for the surface of a non-wetting single-crystal film in an attractive substrate potential is derived and used to study the dynamics of a pinhole for the varying initial depth of a pinhole and the strengths of the potential and the surface energy anisotropy. The results of the simulations demonstrate how the corresponding parameters may lead to complete or partial dewetting of the film. Anisotropy of the surface energy, through faceting of the pinhole walls, is found to most drastically affect the time to film rupture. In particular, the similations support the conjecture that the strong anisotropy is capable of the complete suppression of dewetting even when the attractive substrate potential is strong.Comment: Submitted to PR

    Ferromagnetism in the Infinite-U Hubbard Model

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    We have studied the stability of the ferromagnetic state in the infinite-U Hubbard model on a square lattice by approximate diagonalization of finite lattices using the density matrix renormalization group technique. By studying lattices with up to 5X20 sites, we have found the ferromagnetic state to be stable below the hole density of 22 percent. Beyond 22 percent of hole doping, the total spin of the ground state decreased gradually to zero with increasing hole density.Comment: 13 pages, RevteX 3.0, seven figures appended in uuencoded form, correcting problems with uuencoded figure

    Self Consistent Expansion for the Molecular Beam Epitaxy Equation

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    Motivated by a controversy over the correct results derived from the dynamic renormalization group (DRG) analysis of the non linear molecular beam epitaxy (MBE) equation, a self-consistent expansion (SCE) for the non linear MBE theory is considered. The scaling exponents are obtained for spatially correlated noise of the general form D(rr,tt)=2D0rr2ρdδ(tt)D({\vec r - \vec r',t - t'}) = 2D_0 | {\vec r - \vec r'} |^{2\rho - d} \delta ({t - t'}). I find a lower critical dimension dc(ρ)=4+2ρd_c (\rho) = 4 + 2\rho , above, which the linear MBE solution appears. Below the lower critical dimension a r-dependent strong-coupling solution is found. These results help to resolve the controversy over the correct exponents that describe non linear MBE, using a reliable method that proved itself in the past by predicting reasonable results for the Kardar-Parisi-Zhang (KPZ) system, where DRG failed to do so.Comment: 16 page

    Phase II Proof-of-Concept Trial of the Orexin Receptor Antagonist Filorexant (MK-6096) in Patients with Major Depressive Disorder.

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    BackgroundWe evaluated the orexin receptor antagonist filorexant (MK-6096) for treatment augmentation in patients with major depressive disorder.MethodsWe conducted a 6-week, double-blind, placebo-controlled, parallel-group, Phase II, proof-of-concept study. Patients with major depressive disorder (partial responders to ongoing antidepressant therapy) were randomized 1:1 to once-daily oral filorexant 10 mg or matching placebo.ResultsDue to enrollment challenges, the study was terminated early, resulting in insufficient statistical power to detect a prespecified treatment difference; of 326 patients planned, 129 (40%) were randomized and 128 took treatment. There was no statistically significant difference in the primary endpoint of change from baseline to week 6 in Montgomery Asberg Depression Rating Scale total score; the estimated treatment difference for filorexant-placebo was -0.7 (with negative values favoring filorexant) (P=.679). The most common adverse events were somnolence and suicidal ideation.ConclusionsThe interpretation of the results is limited by the enrollment, which was less than originally planned, but the available data do not suggest efficacy of orexin receptor antagonism with filorexant for the treatment of depression. (Clinical Trial Registry: clinicaltrials.gov: NCT01554176)

    The Effect of Electronic Paramagnetism on Nuclear Magnetic Resonance Frequencies in Metals

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    Observations on the shifts of nuclear resonances in metals (Id {sup 7}, Na {sup 23}, Ou {sup 63}, Be {sup 9}, Fe {sup 207}, A1 {sup 27} and Oa {sup 69}) due to free electron paramagnetism; comparison with theoretical values

    Exchange in silicon-based quantum computer architecture

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    The silicon-based quantum computer proposal has been one of the intensely pursued ideas during the past three years. Here we calculate the donor electron exchange in silicon and germanium, and demonstrate an atomic-scale challenge for quantum computing in Si (and Ge), as the six (four) conduction band minima in Si (Ge) lead to inter-valley electronic interferences, generating strong oscillations in the exchange splitting of two-donor two-electron states. Donor positioning with atomic scale precision within the unit cell thus becomes a decisive factor in determining the strength of the exchange coupling--a fundamental ingredient for two-qubit operations in a silicon-based quantum computer.Comment: 5 pages, 2 figure
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