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Optical Waveplates Based on Birefringence of Anisotropic Two-Dimensional Layered Materials
Birefringence is an inherent optical property of anisotropic materials introduced by the anisotropic confinement in their crystal structures. It enables manipulation of light propagation properties (e.g., phase velocity, reflection, and refrac- tion) for various photonic and optoelectronic applications, including waveplates and liquid crystal displays. Two-dimensional (2D) layered materials with high anisotropy are currently gaining an increasing interest for polarization-integrated nano- device applications, which advances the research on birefringent materials. In this article, we investigate the optical birefrin- gence of three anisotropic 2D layered materials (black phosphorus (BP), rhenium disulfide (ReS2), and rhenium diselenide (ReSe2)). We demonstrate that the birefringence in BP (~0.245) is ~ 6 times larger than that of ReS2 (~0.037) and ReSe2 (~0.047) at 520 nm and is comparable to the current state of the art bulk materials (e.g., CaCO3). We use these 2D materials to fabricate atomically-thin optical waveplates and investigate their performance. In particular, for BP, we observe a polarization-plane rotation of ~0.05° per atomic layer at 520 nm. Our results show that the relatively large birefringence of anisotropic 2D layered materials can enable accurate manipulation of light polarization with atomically controlled device thickness for various applications where integrated, nanoscale polarization-controllers are required
Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX 2 (X = S, Se and Te)
We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics
Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions
The chemical inertness of the defect-free basal plane confers environmental
stability to MoS2 single-layers, but it also limits their chemical versatility
and catalytic activity. The stability of the pristine MoS2 basal plane against
oxidation under ambient conditions is a widely accepted assumption in the
interpretation of various studies and applications. However, single-atom level
structural investigations reported here reveal that oxygen atoms spontaneously
incorporate into the basal plane of MoS2 single layers during ambient exposure.
Our scanning tunneling microscopy investigations reveal a slow oxygen
substitution reaction, upon which individual sulfur atoms are one by one
replaced by oxygen, giving rise to solid solution type 2D MoS2-xOx crystals. O
substitution sites present all over the basal plane act as single-atomic active
reaction centers, substantially increasing the catalytic activity of the entire
MoS2 basal plane for the electrochemical H2 evolution reaction.Comment: 6 pages, 5 figure