Quantum-dot based ultrafast photoconductive antennae for efficient THz radiation

Here we overview our work on quantum dot based THz photoconductive antennae, capable of being pumped at very high optical intensities of higher than 1W optical mean power, i.e. about 50 times higher than the conventional LT-GaAs based antennae. Apart from high thermal tolerance, defect-free GaAs crystal layers in an InAs:GaAs quantum dot structure allow high carrier mobility and ultra-short photo carrier lifetimes simultaneously. Thus, they combine the advantages and lacking the disadvantages of GaAs and LT-GaAs, which are the most popular materials so far, and thus can be used for both CW and pulsed THz generation. By changing quantum dot size, composition, density of dots and number of quantum dot layers, the optoelectronic properties of the overall structure can be set over a reasonable range-compact semiconductor pump lasers that operate at wavelengths in the region of 1.0 μm to 1.3 μm can be used. InAs:GaAs quantum dot-based antennae samples show no saturation in pulsed THz generation for all average pump powers up to 1W focused into 30 μm spot. Generated THz power is super-linearly proportional to laser pump power. The generated THz spectrum depends on antenna design and can cover from 150 GHz up to 1.5 THz

Compact all-quantum-dot-based tunable THz laser source

We demonstrate an ultracompact, room temperature, tunable terahertz (THz) generating laser source based on difference-frequency-driven photomixing in a coplanar stripline InAs/GaAs quantum-dot (QD) antenna pumped by a broadly tunable, high power, continuous wave InAs/GaAs QD laser diode in the double-grating quasi-Littrow configuration. The dual-wavelength QD laser operating in the 1150- 1301 nm wavelength region with a maximum output power of 280 mW and with tunable difference-frequency (277 GHz to 30 THz) was used to achieve tunable THz generation in the QD antenna with a photoconductive gap of 50 μm. The best THz output performance was observed at pump wavelengths around the first excited state of the InAs/GaAs QDs (∼1160 nm), where a maximum output power of 0.6 nW at 0.83 THz was demonstrated

Enhancing the properties of plasmonic nanowires

In this paper, we show the approach to enhance the optical properties of the plasmonic nanowires from the perspectives of both field enhancement and tunability. Two different cases have been suggested for the consideration: the first one uses hollow-core metamaterial interface, while the other involves metallic nanowire metamaterial interface. It has been outlined, that the use of nanowire metamaterial interface allows for stretching the frequency range of surface wave existence from 500 THz (600 nm) to approximately 1000 THz (300 nm). Moreover, the nanowire metamaterial interface demonstrates better field confinement

Towards realisation of an efficient continuous wave terahertz source using quantum dot devices

A continuous wave (CW) terahertz source emitting in a broad frequency range (1-5THz) is promising towards achieving a compact, high power, finely tunable, room temperature terahertz generation system which will be of immense significance towards the realisation of terahertz applications in spectroscopy, communication, sensing, and imaging among others. We have demonstrated a tunable continuous-wave Quantum Dot external cavity laser emitting at two frequencies for continuous wave terahertz emission in a Quantum dot Photoconductive Antenna (PCA). The external cavity QD Laser has been characterised with tunability of 152nm and a tuning range from 1143nm -1295.8nm that lies within the THz difference frequency for the generation of THz radiation from QD based PCAs

Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna

A broadband terahertz (THz) source is desirable for applications such as imaging, spectroscopy and security. Towards this, an InAs/GaAs quantum dot (QD) based photoconductive antenna (PCA) is a promising and compact solution for THz generation. Coherent THz radiation in the pulsed and the CW regime has been generated with a QD PCA under a resonant and off-resonant pumps [1, 2]. While photoconductivity of QD materials in mid- and far-IR at lower temperatures has been studied for cryogenic sensors and attributed to interlevel transitions, near-IE interband photoconductivity needs further investigation [3, 4]. In this work, we report on the photoconductive properties of an InAs/GaAs QD PCA pumped by a broadly-tunable InAs/GaAs QD external-cavity diode laser

Operation of quantum dot based terahertz photoconductive antennas under extreme pumping conditions

Photoconductive antennas deposited onto GaAs substrates that incorporate InAs quantum dots have been recently shown to efficiently generate both pulsed and CW terahertz radiation. In this Letter, we determine the operational limits of these antennas and demonstrate their extreme thermal breakdown tolerance. Implanted quantum dots serve as free carrier capture sites, thus acting as lifetime shorteners, similar to defects in low-temperature grown substrates. However, unlike the latter, defect-free quantum-dot structures possess perfect lattice quality, thus not compromising high carrier mobility and pump intensity stealth. Single gap design quantum dot based photoconductive antennas are shown to operate under up to 1 W of average pump power (∼1.6 mJ cm−2 energy density), which is more than 20 times higher than the pumping limit of low-temperature grown GaAs based substrates. Conversion efficiency of the quantum dot based photoconductive antennas does not saturate up to 0.75 W of pump power (∼1.1 mJ cm−2 energy density). Such a thermal tolerance suggests a glowy prospect for the proposed antennas as a perspective candidate for intracavity optical-to-terahertz converters

Application of Terahertz Pulse Time-Domain Holography for Phase Imaging

Terahertz pulse time-domain holography (THz PTDH) is the powerful technique for high-resolution amplitude and phase THz imaging that allows mapping spectroscopic information across the imaged object. In this paper, we consider most sought after applications of phase imaging provided by this technique and experimentally demonstrate the ability of the method to reconstruct smooth and stepped relief features of an object that is transparent in THz region. Unlike the amplitude distribution, which does not contain any significant information in this case, phase distribution not only reveals the object qualitatively,but also allows the reconstruction of the object thicknessespattern, even in low signal-to-noise registration conditions. Mainlimitations of the proposed method, such as transverse resolutionand low signal-to-noise environment are carefully studied and mitigated

Influence of charge carriers on corrugation of suspended graphene

Electronic degrees of freedom are predicted to play a significant role in mechanics of two-dimensional crystalline membranes. Here we show that appearance of charge carriers may cause a considerable impact on suspended graphene corrugation, thus leading to additional mechanism resulting in charge carriers mobility variation with their density. This finding may account for some details of suspended graphene conductivity dependence on its doping level and suggests that proper modeling of suspended graphene-based device properties must include the influence of charge carriers on its surface corrugation

Edge-emitting mode-locked quantum dot lasers

Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources for the generation of picosecond and femtosecond pulses and/or broad frequency combs. They provide direct electrical control and footprints down to few millimeters. Their broad gain bandwidths (up to 50 nm) for ground to ground state transitions as discussed below, with potential for increase to more than 200 nm by overlapping ground and excited state band transitions) allow for wavelength-tuning and generation of pico- and femtosecond laser pulses over a broad wavelength range. In the last two decades, mode-locked QD laser have become promising tools for low-power applications in ultrafast photonics. In this article, we review the development and the state-of-the-art of edge-emitting mode-locked QD lasers. We start with a brief introduction on QD active media and their uses in lasers, amplifiers, and saturable absorbers. We further discuss the basic principles of mode-locking in QD lasers, including theory of nonlinear phenomena in QD waveguides, ultrafast carrier dynamics, and mode-locking methods. Different types of mode-locked QD laser systems, such as monolithic one- and two-section devices, external-cavity setups, two-wavelength operation, and master-oscillator power-amplifier systems, are discussed and compared. After presenting the recent trends and results in the field of mode-locked QD lasers, we briefly discuss the application areas