Strain engineering of the electro-optic effect in polycrystalline BiFeO3 films [Invited]

peer reviewedElectro-optic thin film materials, which change their refractive index upon the application of an electric field, are crucial for the fabrication of optical modulators in integrated photonic circuits. Therefore, it is key to develop strategies to tune the linear electro-optic effect. Strain engineering has arisen as a powerful tool to optimize the electro-optic coefficients in ferroelectric thin films. In this report, the electro-optical properties of polycrystalline bismuth ferrite (BiFeO3) thin films are studied. The electro-optic coefficients (reff) of low-cost solution-processed BiFeO3 films under different substrate-induced thermal stress are characterized using a modified Teng-Man technique in transmission geometry. The influence of poling state and substrate stress on the electro-optical properties are discussed. The films show a notable piezo-electro-optic effect: the effective electro-optic coefficient increases both under compressive and tensile in-plane stress, with compressive stress having a much more profound impact. Electro-optic coefficients of 2.2 pm/V are obtained in films under a biaxial compressive stress of 0.54 GPa

Vers la mesure de nano-objets uniques, réalisation de nanogaps par électromigration.

We have studied the formation of nanogaps by électromigration of gold nanowires. Electromigration relies on large current densities to break a thin and narrow metallic wire and can be used for the electrical characterization of nanometer scale objects. Real time atomic force microscopy during the electromigration process has unraveled the dynamic of the process. Indeed, this study reveals that the major structural changes appear at the early stage of the process and that the final global structure of the device is directly linked to the preexisting microstructure. For the first time, we make nanogaps by electromigration of monocrystalline nanowires. We show that despite the absence of grain boundaries, it is possible to form nanogaps in epitaxial materials. The morphology of those nanogaps is more reproducible. The electrical transport properties of the polycristalline nanogaps have been measured. The obtained characteristics show particular signature that can be attributed to the presence of gold cluster formed during the electromigration process and / or to polymer from the nanowire fabrication. These results show the difficulty to measure at the molecular scale.Nous avons étudié la formation de nanogaps par électromigration dans des nanofils d'or. Cette technique consiste à provoquer la rupture d'un nanofil en lui appliquant de fortes densités de courant et peut être utilisée pour la caractérisation électrique de nano-objets. L'étude en temps réel du processus d'électromigration par microscopie à force atomique a permis d'apporter un éclairage nouveau de la dynamique du processus. En effet, il apparaît que la structure globale du dispositif est définie dans les premiers temps de l'électromigration et nous avons montré que cette structure est directement liée à la microstructure du film métallique. Pour la première fois, des nanogaps ont été élaborés par électromigration dans des films monocristallins. Malgré l'absence de joints de grain, il est possible de former des nanogaps dans un matériau épitaxié. L'utilisation de ces matériaux permet d'obtenir des nanogaps avec une morphologie plus reproductible. Les propriétés de transports des nanogaps obtenus à partir de films polycristallins ont été caractérisées. Les caractéristiques obtenues présentent toutes des signatures particulières, attribuées à la présence d'agrégats d'or provenant de la procédure d'électromigration et/ou de polymères issus du procédé de nanofabrication. Ces résultats montrent la difficulté à réaliser des mesures à l'échelle de la molécule unique

Toward single nano-object measurement, fabrication of nanogaps by electromigration

Au cours de ce travail de thèse, nous avons étudié la formation de nanogaps par électromigration dans des nanofils d'or. Cette technique consiste à provoquer la rupture d'un nanofil en lui appliquant de fortes densités de courant et peut être utilisée pour la caractérisation électrique de nano-objets. Néanmoins, les mécanismes de formation des nanogaps ne sont, à ce jour, pas encore totalement compris. L'étude en temps réel du processus d'électromigration par microscopie à force atomique a permis d'apporter un éclairage nouveau de la dynamique du processus. En effet, il apparaît que la structure globale du dispositif est définie dans les premiers temps de l'électromigration et nous avons montré que cette structure est directement liée à la microstructure du film métallique. Pour la première fois, des nanogaps ont été élaborés par électromigration dans des films monocristallins. Malgré l'absence de joints de grain, il est possible de former des nanogaps dans un matériau épitaxié. L'utilisation de ces matériaux permet d'obtenir des nanogaps avec une morphologie plus reproductible. Les propriétés de transports des nanogaps obtenus à partir de films polycristallins ont été caractérisées. Les caractéristiques obtenues présentent toutes des signatures particulières, attribuées à la présence d'agrégats d'or provenant de la procédure d'électromigration et/ou de polymères issus du procédé de nanofabrication. Ces résultats montrent la difficulté à réaliser des mesures à l'échelle de la molécule uniqueWe have studied the formation of nanogaps by électromigration of gold nanowires. Electromigration relies on large current densities to break a thin and narrow metallic wire and can be used for the electrical characterization of nanometer scale objects. Nevertheless, a complete description of the electromigration process is lacking. Real time atomic force microscopy during the electromigration process gave a new view the dynamic of the process. Indeed, this study reveals that the major structural changes appear at the early stage of the process and that the final global structure of the device is directly linked to the pre-existing microstructure. For the first time, we make nanogaps by électromigration of monocrystalline nanowires. We show that despite the lacking of grain boundaries, it is possible to form nanogaps in epitaxial materials. The morphology of those nanogaps is more reproducible. The electrical transport properties of the polycristalline nanogaps have been measured. The entire obtained characteristics show particular signature that can be attributed to the presence of gold cluster formed during the électromigration process and / or to polymer from the nanowire fabrication. These results show the difficulty to measure at the molecular scal

Vers la mesure de nano-objets uniques, réalisation de nanogaps par électromigration

Au cours de ce travail de thèse, nous avons étudié la formation de nanogaps par électromigration dans des nanofils d'or. Cette technique consiste à provoquer la rupture d'un nanofil en lui appliquant de fortes densités de courant et peut être utilisée pour la caractérisation électrique de nano-objets. Néanmoins, les mécanismes de formation des nanogaps ne sont, à ce jour, pas encore totalement compris. L'étude en temps réel du processus d'électromigration par microscopie à force atomique a permis d'apporter un éclairage nouveau de la dynamique du processus. En effet, il apparaît que la structure globale du dispositif est définie dans les premiers temps de l'électromigration et nous avons montré que cette structure est directement liée à la microstructure du film métallique. Pour la première fois, des nanogaps ont été élaborés par électromigration dans des films monocristallins. Malgré l'absence de joints de grain, il est possible de former des nanogaps dans un matériau épitaxié. L'utilisation de ces matériaux permet d'obtenir des nanogaps avec une morphologie plus reproductible. Les propriétés de transports des nanogaps obtenus à partir de films polycristallins ont été caractérisées. Les caractéristiques obtenues présentent toutes des signatures particulières, attribuées à la présence d'agrégats d'or provenant de la procédure d'électromigration et/ou de polymères issus du procédé de nanofabrication. Ces résultats montrent la difficulté à réaliser des mesures à l'échelle de la molécule uniqueWe have studied the formation of nanogaps by électromigration of gold nanowires. Electromigration relies on large current densities to break a thin and narrow metallic wire and can be used for the electrical characterization of nanometer scale objects. Nevertheless, a complete description of the electromigration process is lacking. Real time atomic force microscopy during the electromigration process gave a new view the dynamic of the process. Indeed, this study reveals that the major structural changes appear at the early stage of the process and that the final global structure of the device is directly linked to the pre-existing microstructure. For the first time, we make nanogaps by électromigration of monocrystalline nanowires. We show that despite the lacking of grain boundaries, it is possible to form nanogaps in epitaxial materials. The morphology of those nanogaps is more reproducible. The electrical transport properties of the polycristalline nanogaps have been measured. The entire obtained characteristics show particular signature that can be attributed to the presence of gold cluster formed during the électromigration process and / or to polymer from the nanowire fabrication. These results show the difficulty to measure at the molecular scaleMETZ-SCD (574632105) / SudocNANCY1-Bib. numérique (543959902) / SudocNANCY2-Bibliotheque electronique (543959901) / SudocNANCY-INPL-Bib. électronique (545479901) / SudocSudocFranceF

Transparent Ferroelectric Capacitors on Glass

We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO) transparent electrodes with an interdigitated electrode (IDE) design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range). Fully crystallized Pb(Zr0.52Ti0.48)O3 (PZT) films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures

Evidence of Negative Capacitance and Capacitance Modulation by Light and Mechanical Stimuli in Pt/ZnO/Pt Schottky Junctions

We report on the evidence of negative capacitance values in a system consisting of metal-semiconductor-metal (MSM) structures, with Schottky junctions made of zinc oxide thin films deposited by Atomic Layer Deposition (ALD) on top of platinum interdigitated electrodes (IDE). The MSM structures were studied over a wide frequency range, between 20 Hz and 1 MHz. Light and mechanical strain applied to the device modulate positive or negative capacitance and conductance characteristics by tuning the flow of electrons involved in the conduction mechanisms. A complete study was carried out by measuring the capacitance and conductance characteristics under the influence of both dark and light conditions, over an extended range of applied bias voltage and frequency. An impact-loss process linked to the injection of hot electrons at the interface trap states of the metal-semiconductor junction is proposed to be at the origin of the apparition of the negative capacitance values. These negative values are preceded by a local increase of the capacitance associated with the accumulation of trapped electrons at the interface trap states. Thus, we propose a simple device where the capacitance values can be modulated over a wide frequency range via the action of light and strain, while using cleanroom-compatible materials for fabrication. These results open up new perspectives and applications for the miniaturization of highly sensitive and low power consumption environmental sensors, as well as for broadband impedance matching in radio frequency applications

Silicon neuron dedicated to memristive spiking neural networks

International audienceSince memristor came out in 2008, neuromorphic designers investigated the possibility of using memristors as plastic synapses due to their intrinsic properties of plasticity and weight storage. In this paper we will present a silicon neuron compatible with memristive synapses in order to build analog neural network. This neuron mainly includes current conveyor (CCII) for driving memristor as excitatory or inhibitory synapses and spike generator whose waveform is dedicated to synaptic plasticity algorithm based on Spike Timing Dependent Plasticity (STDP). This silicon neuron has been fabricated, characterized and finally connected with a ferroelectric memristor to validate the synaptic weight updating principle

A Self-Purifying Microfluidic System for Identifying Drugs Acting Against Adult Schistosomes

The discovery of novel antihelminthic molecules to combat the development and spread of schistosomiasis, a disease caused by several Schistosoma flatworm species, mobilizes significant research efforts worldwide. In the absence of reliable and practical biochemical assays for measuring the viability of adult worms, the antischistosomicidal activity of molecules is usually evaluated by a detailed microscopic observation of worm mobility and/or integrity upon drug exposure. These assays have the disadvantage of being inacurate, subjective, biased by the limited in vitro worm viability and difficult to integrate at high density. We describe here a self-purifiying microfluidic system enabling the selection of healthy adult worms and the identification of molecules acting on the parasite. The worms are assayed in a dynamic environment that eliminates unhealthy worms that cannot attach firmly to the chip walls prior to being exposed to the drug. The detachment of the worms is also used as second step readout for identifying active compounds. We have validated this new fluidic screening approach using the two major antihelmintic drugs, Praziquantel and Artemisinin. The reported dynamic system is simple to produce and to parallelize. Importantly, it enables a quick, sensitive and reliable detection of antischistosomal compounds in no more than one day. This system can potentially be modified in the future to better mimic the natural habitat of the parasite

Crystallization of piezoceramic films on glass via flash lamp annealing

Abstract Integration of thin-film oxide piezoelectrics on glass is imperative for the next generation of transparent electronics to attain sensing and actuating functions. However, their crystallization temperature (above 650 °C) is incompatible with most glasses. We developed a flash lamp process for the growth of piezoelectric lead zirconate titanate films. The process enables crystallization on various types of glasses in a few seconds only. The functional properties of these films are comparable to the films processed with standard rapid thermal annealing at 700 °C. A surface haptic device was fabricated with a 1 μm-thick film (piezoelectric e 33,f of −5 C m−2). Its ultrasonic surface deflection reached 1.5 μm at 60 V, sufficient for its use in surface rendering applications. This flash lamp annealing process is compatible with large glass sheets and roll-to-roll processing and has the potential to significantly expand the applications of piezoelectric devices on glass