Growth And Characterization Of Gaalas/gaas And Gainas/inp Structures: The Effect Of A Pulse Metalorganic Flow

GaAlAs/GaAs and GaInAs/InP thick layers, single and multiple quantum wells were grown by atmospheric pressure metalorganic vapor phase epitaxy. Auger electron spectroscopy, wedge transmission electron microscopy, x-ray diffraction, low-temperature photoluminescence, and scanning electron microscopy were used to analyze the crystal quality. These analysis techniques show that layers grown using high vapor pressure metalorganic sources present fluctuations in the ternary alloy composition. We propose that these fluctuations are due to the pulse character of the high vapor pressure metalorganic flow. Bubbling experiments were performed to show the relationship between ternary layer composition fluctuation and the pulse character of the metalorganic flow. High vapor pressure metalorganic source like trimethylgallium presents tens of Angströms growth rate per pulse or bubble whereas a low vapor pressure source like triethylgallium presents few Angströms growth rate per bubble.71117918

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 µm

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)