CONTRIBUTION TO THE STUDY OF In2S3 THIN FILMS PROPERTIES GROWN BY SPRAY PYROLYSIS

Polycrystalline In2S3 thin films were grown on glass substrates by means of chemical spray pyrolysis, using indium chloride (InCl3) and thiourea (CS(NH2)2) as precursors. The deposits were performed under air atmosphere with substrates maintained at temperatures varying from 300 to 400°C. The optical and structural properties of the films were studied as a function of the deposition time and the substrate temperature. X-ray diffraction has shown that the In2S3 material is the main phase present in these films and that the allotropic structure of this phase is affected by the substrate temperature and the deposition time. The optical transmittance of the In2S3 films varies in accordance with the substrate temperature. The average transmission in the visible region exceeds 70% and optical band gap of the films was found to vary from 2.47 to 2.53 eV

Étude des propriétés structurales, optiques et électriques des couches minces de ZnO dopées Al déposées par Spray Pyrolysis

Les couches minces de ZnO dopées Aluminium (AZO) ont été déposées par la technique spray pyrolysis sur des substrats de verre ordinaire préchauffés à la température de 425°C. Des solutions aqueuses de chlorure de zinc de concentration 0.1M et dopées à partir du nitrate d’aluminium ont été utilisées pour le dépôt. Le pourcentage de l’aluminium dans la solution variait de 0 à 5%. Après dépôt, les couches ont été caractérisées et l’effet de la concentration du dopage de l’aluminium sur leurs propriétés structurale, optique et électrique a été étudié. L’analyse structurale a montré que les films déposés ont cristallisé suivant la direction préférentielle (002) et que le dopage de l’aluminium avait un effet important sur l’intensité et le déplacement des pics. Les spectres de transmission montrent que les films AZnO sont transparents (~ 90%) dans les régions du proche ultraviolet et du visible. Les mesures électriques réalisées par la technique des 4 pointes a donné une conductivité maximale de 1.6 x104 (Ω.cm)-1 pour le film déposé à 2% Al.Mots-clés : ZnO, dopage, spray pyrolysis, propriétés électriques

Structural, morphological and optical properties of In2S3 thin films obtained by SILAR method

[EN] In2S3 thin films have been elaborated onto glass substrate by SILAR method at room temperature using different immersion time in the solution of cation and anion and fixing the rinsing time. The film composition, morphology and structure were investigated using energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and X-ray diffraction techniques. Optical properties, such transmission and band gap have been also analyzed. The effects of annealing on the morphological structure thin films are also described. The x-rays diffraction spectra indicated that the formed compounds are β-In2S3 polycrystalline thin films with In6S7 as second phase in sample S1 and sample S2 and no another phase in sample 3. SEM revealed homogeneous and relatively uniform films and EDAX shows sample 3 with S/In=1.44. For sample 1 and sample 2, we noted an increase of band gap when rinsing time increases.Sall, T.; Raidou, A.; Elfarrass, S.; Hartiti, B.; Marí, B.; Qachaou, A.; Fahoume, M. (2014). Structural, morphological and optical properties of In2S3 thin films obtained by SILAR method. Optical and Quantum Electronics. 46(1):247-257. doi:10.1007/s11082-013-9786-xS247257461Bhira, L., Essaidi, H., Belgacem, S., Couturier, G., Salardenne, J., Barreau, N., Bernede, J.C.: Structural and photoelectrical properties of sprayed \upbeta β - $$\text{ In }_{2}\text{ S }_{3}$$ In 2 S 3 thin films. Phys. Status Solidi A. 181, 427–435 (2000)Castelo-Gonzalez, O.A., Santacruz-Ortega, H.C., Quevedo-Lopez, M.A., Sotelo-Lerma, M.: Synthesis and characterization of $$\text{ In }_{2}\text{ S }_{3 }$$ In 2 S 3 thin films deposited by chemical bath deposition on polyethylene naphthalate substrates. J. Electron. Mater. 41, 695–700 (2012)Gorge, J., Joseph, K.S., Pradeep, B., Palson, T.I.: Reactively evaporated films of indium sulphide. Phys. Stat. Sol. (a) 106, 123–131 (1988)Marí, B., Mollar, M., Soro, D., Henríquez, R., Schrebler, R., Gómez, H.: Electrodeposition of $$\text{ In }_{2}S_{3}$$ In 2 S 3 thin films onto FTO from DMSO solution. Int. J. Electrochem. Sci. 8, 3510–3523 (2013)Mathew, M., Gopinath, M., Sudha Kartha, C., Vijayakumar, K.P., Kashiwaba, Y.: Tin doping in spray pyrolysed indium sulfide thin films for solar cell applications. Sol. Energy 84, 888–897 (2010)Pathan, H.M., Lokhande, C.D., Kulkarni, S.S., Amalnerka, D.P., Seth, T., Han, S.-H.: Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films. Mater. Res. Bull. 40, 1018–1023 (2005)Ramya, K., Reddy, M.V., Ramakrishna Reddy, K.T.: Characterization of Thermally Evaporated $$\text{ In }_{2}\text{ S }_{3}$$ In 2 S 3 Films for Solar Cell Application. Hindawi Publishing Corporation, Conference Papers in Energy vol. 2013, pp. 1–4 (May 2013)Sall, T., Hartiti, B., Mari, B., Miquel, M., Laanab, L., Fahoume, M.: Elaboration and characterization of $$\text{ In }_{2}\text{ S }_{3 }$$ In 2 S 3 thin films by spray pyrolysis with [S]/[In]=3 ratio. Renewable and Sustainable Energy Conference (IRSEC) 2013 International, IEEE pp. 58–62 (2013)Turan, E., Zor, M., Kul, M., Aybek, A.S., Taskopru, T.: \upalpha α - $$\text{ In }_{2}\text{ S }_{3}$$ In 2 S 3 and \upbeta β - $$\text{ In }_{2}\text{ S }_{3}$$ In 2 S 3 phases produced by SILAR technique. Philos. Mag. 92, 1716–1726 (2012)Uplane, M.D., Pawar, S.H.: Effect of substrate temperature on transport and optical properties of sprayed $$\text{ Cd }_{1-\text{ x }} \text{ Zn }_{\text{ x }}$$ Cd 1 - x Zn x S films. Solid State Commun. 46, 847–850 (1983