47 research outputs found
Calculation of Generalized Polynomial-Chaos Basis Functions and Gauss Quadrature Rules in Hierarchical Uncertainty Quantification
Stochastic spectral methods are efficient techniques for uncertainty
quantification. Recently they have shown excellent performance in the
statistical analysis of integrated circuits. In stochastic spectral methods,
one needs to determine a set of orthonormal polynomials and a proper numerical
quadrature rule. The former are used as the basis functions in a generalized
polynomial chaos expansion. The latter is used to compute the integrals
involved in stochastic spectral methods. Obtaining such information requires
knowing the density function of the random input {\it a-priori}. However,
individual system components are often described by surrogate models rather
than density functions. In order to apply stochastic spectral methods in
hierarchical uncertainty quantification, we first propose to construct
physically consistent closed-form density functions by two monotone
interpolation schemes. Then, by exploiting the special forms of the obtained
density functions, we determine the generalized polynomial-chaos basis
functions and the Gauss quadrature rules that are required by a stochastic
spectral simulator. The effectiveness of our proposed algorithm is verified by
both synthetic and practical circuit examples.Comment: Published by IEEE Trans CAD in May 201
Model order reduction of fully parameterized systems by recursive least square optimization
This paper presents an approach for the model order reduction of fully parameterized linear dynamic systems. In a fully parameterized system, not only the state matrices, but also can the input/output matrices be parameterized. The algorithm presented in this paper is based on neither conventional moment-matching nor balanced-truncation ideas. Instead, it uses “optimal (block) vectors” to construct the projection matrix, such that the system errors in the whole parameter space are minimized. This minimization problem is formulated as a recursive least square (RLS) optimization and then solved at a low cost. Our algorithm is tested by a set of multi-port multi-parameter cases with both intermediate and large parameter variations. The numerical results show that high accuracy is guaranteed, and that very compact models can be obtained for multi-parameter models due to the fact that the ROM size is independent of the number of parameters in our approach
Uncertainty quantification for integrated circuits: Stochastic spectral methods
Due to significant manufacturing process variations, the performance of integrated circuits (ICs) has become increasingly uncertain. Such uncertainties must be carefully quantified with efficient stochastic circuit simulators. This paper discusses the recent advances of stochastic spectral circuit simulators based on generalized polynomial chaos (gPC). Such techniques can handle both Gaussian and non-Gaussian random parameters, showing remarkable speedup over Monte Carlo for circuits with a small or medium number of parameters. We focus on the recently
developed stochastic testing and the application of conventional
stochastic Galerkin and stochastic collocation schemes to nonlinear
circuit problems. The uncertainty quantification algorithms for static, transient and periodic steady-state simulations are presented along with some practical simulation results. Some open problems in this field are discussed.MIT Masdar Program (196F/002/707/102f/70/9374
MEMS Accelerometers
Micro-electro-mechanical system (MEMS) devices are widely used for inertia, pressure, and ultrasound sensing applications. Research on integrated MEMS technology has undergone extensive development driven by the requirements of a compact footprint, low cost, and increased functionality. Accelerometers are among the most widely used sensors implemented in MEMS technology. MEMS accelerometers are showing a growing presence in almost all industries ranging from automotive to medical. A traditional MEMS accelerometer employs a proof mass suspended to springs, which displaces in response to an external acceleration. A single proof mass can be used for one- or multi-axis sensing. A variety of transduction mechanisms have been used to detect the displacement. They include capacitive, piezoelectric, thermal, tunneling, and optical mechanisms. Capacitive accelerometers are widely used due to their DC measurement interface, thermal stability, reliability, and low cost. However, they are sensitive to electromagnetic field interferences and have poor performance for high-end applications (e.g., precise attitude control for the satellite). Over the past three decades, steady progress has been made in the area of optical accelerometers for high-performance and high-sensitivity applications but several challenges are still to be tackled by researchers and engineers to fully realize opto-mechanical accelerometers, such as chip-scale integration, scaling, low bandwidth, etc
Stochastic Testing Simulator for Integrated Circuits and MEMS: Hierarchical and Sparse Techniques
Process variations are a major concern in today's chip design since they can
significantly degrade chip performance. To predict such degradation, existing
circuit and MEMS simulators rely on Monte Carlo algorithms, which are typically
too slow. Therefore, novel fast stochastic simulators are highly desired. This
paper first reviews our recently developed stochastic testing simulator that
can achieve speedup factors of hundreds to thousands over Monte Carlo. Then, we
develop a fast hierarchical stochastic spectral simulator to simulate a complex
circuit or system consisting of several blocks. We further present a fast
simulation approach based on anchored ANOVA (analysis of variance) for some
design problems with many process variations. This approach can reduce the
simulation cost and can identify which variation sources have strong impacts on
the circuit's performance. The simulation results of some circuit and MEMS
examples are reported to show the effectiveness of our simulatorComment: Accepted to IEEE Custom Integrated Circuits Conference in June 2014.
arXiv admin note: text overlap with arXiv:1407.302
Stochastic Testing Method for Transistor-Level Uncertainty Quantification Based on Generalized Polynomial Chaos
Uncertainties have become a major concern in integrated circuit design. In order to avoid the huge number of repeated simulations in conventional Monte Carlo flows, this paper presents an intrusive spectral simulator for statistical circuit analysis. Our simulator employs the recently developed generalized polynomial chaos expansion to perform uncertainty quantification of nonlinear transistor circuits with both Gaussian and non-Gaussian random parameters. We modify the nonintrusive stochastic collocation (SC) method and develop an intrusive variant called stochastic testing (ST) method. Compared with the popular intrusive stochastic Galerkin (SG) method, the coupled deterministic equations resulting from our proposed ST method can be solved in a decoupled manner at each time point. At the same time, ST requires fewer samples and allows more flexible time step size controls than directly using a nonintrusive SC solver. These two properties make ST more efficient than SG and than existing SC methods, and more suitable for time-domain circuit simulation. Simulation results of several digital, analog and RF circuits are reported. Since our algorithm is based on generic mathematical models, the proposed ST algorithm can be applied to many other engineering problems
Statistical Modeling with the Virtual Source MOSFET Model
A statistical extension of the ultra-compact Virtual Source (VS) MOSFET model is developed here for the first time. The characterization uses a statistical extraction technique based on the backward propagation of variance (BPV) with variability parameters derived directly from the nominal VS model. The resulting statistical VS model is extensively validated using Monte Carlo simulations, and the statistical distributions of several figures of merit for logic and memory cells are compared with those of a BSIM model from a 40-nm CMOS industrial design kit. The comparisons show almost identical distributions with distinct run time advantages for the statistical VS model. Additional simulations show that the statistical VS model accurately captures non-Gaussian features that are important for low-power designs.Masdar Institute of Science and Technolog