Spin-dependent THz oscillator based on hybrid graphene superlattices

We theoretically study the occurrence of Bloch oscillations in biased hybrid graphene systems with spin-dependent superlattices. The spin-dependent potential is realized by a set of ferromagnetic insulator strips deposited on top of a gapped graphene nanoribbon, which induce a proximity exchange splitting of the electronic states in the graphene monolayer. We numerically solve the Dirac equation and study Bloch oscillations in the lowest conduction band of the spin-dependent superlattice. While the Bloch frequency is the same for both spins, we find the Bloch amplitude to be spin dependent. This difference results in a spin-polarized ac electric current in the THz range.Comment: 4 pages, 6 figure

Quantum chaos in the mesoscopic device for the Josephson flux qubit

We show that the three-junction SQUID device designed for the Josephson flux qubit can be used to study quantum chaos when operated at high energies. In the parameter region where the system is classically chaotic we analyze the spectral statistics. The nearest neighbor distributions $P(s)$ are well fitted by the Berry Robnik theory employing as free parameters the pure classical measures of the chaotic and regular regions of phase space in the different energy regions. The phase space representation of the wave functions is obtained via the Husimi distributions and the localization of the states on classical structures is analyzed.Comment: Final version, to be published in Phys. Rev. B. References added, introduction and conclusions improve

Frenkel Excitons in Random Systems With Correlated Gaussian Disorder

Optical absorption spectra of Frenkel excitons in random one-dimensional systems are presented. Two models of inhomogeneous broadening, arising from a Gaussian distribution of on-site energies, are considered. In one case the on-site energies are uncorrelated variables whereas in the second model the on-site energies are pairwise correlated (dimers). We observe a red shift and a broadening of the absorption line on increasing the width of the Gaussian distribution. In the two cases we find that the shift is the same, within our numerical accuracy, whereas the broadening is larger when dimers are introduced. The increase of the width of the Gaussian distribution leads to larger differences between uncorrelated and correlated disordered models. We suggest that this higher broadening is due to stronger scattering effects from dimers.Comment: 9 pages, REVTeX 3.0, 3 ps figures. To appear in Physical Review

The Stellar Mass Fundamental Plane: The virial relation and a very thin plane for slow-rotators

Early-type galaxies -- slow and fast rotating ellipticals (E-SRs and E-FRs) and S0s/lenticulars -- define a Fundamental Plane (FP) in the space of half-light radius $R_e$, enclosed surface brightness $I_e$ and velocity dispersion $\sigma_e$. Since $I_e$ and $\sigma_e$ are distance-independent measurements, the thickness of the FP is often expressed in terms of the accuracy with which $I_e$ and $\sigma_e$ can be used to estimate sizes $R_e$. We show that: 1) The thickness of the FP depends strongly on morphology. If the sample only includes E-SRs, then the observed scatter in $R_e$ is $\sim 16\%$, of which only $\sim 9\%$ is intrinsic. Removing galaxies with $M_*<10^{11}M_\odot$ further reduces the observed scatter to $\sim 13\%$ ($\sim 4\%$ intrinsic). The observed scatter increases to the $\sim 25\%$ usually quoted in the literature if E-FRs and S0s are added. If the FP is defined using the eigenvectors of the covariance matrix of the observables, then the E-SRs again define an exceptionally thin FP, with intrinsic scatter of only $5\%$ orthogonal to the plane. 2) The structure within the FP is most easily understood as arising from the fact that $I_e$ and $\sigma_e$ are nearly independent, whereas the $R_e-I_e$ and $R_e-\sigma_e$ correlations are nearly equal and opposite. 3) If the coefficients of the FP differ from those associated with the virial theorem the plane is said to be `tilted'. If we multiply $I_e$ by the global stellar mass-to-light ratio $M_*/L$ and we account for non-homology across the population by using S\'ersic photometry, then the resulting stellar mass FP is less tilted. Accounting self-consistently for $M_*/L$ gradients will change the tilt. The tilt we currently see suggests that the efficiency of turning baryons into stars increases and/or the dark matter fraction decreases as stellar surface brightness increases.Comment: 13 pages, 9 figures, 3 tables, accepted for publication in MNRA

Dynamical phenomena in Fibonacci Semiconductor Superlattices

We present a detailed study of the dynamics of electronic wavepackets in Fibonacci semiconductor superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. Coherent propagation of electrons is described by means of a scalar Hamiltonian using the effective-mass approximation. We have found that an initial Gaussian wavepacket is filtered selectively when passing through the superlattice. This means that only those components of the wavepacket whose wavenumber belong to allowed subminibands of the fractal-like energy spectrum can propagate over the entire superlattice. The Fourier pattern of the transmitted part of the wavepacket presents clear evidences of fractality reproducing those of the underlying energy spectrum. This phenomenon persists even in the presence of unintentional disorder due to growth imperfections. Finally, we have demonstrated that periodic coherent-field induced oscillations (Bloch oscillations), which we are able to observe in our simulations of periodic superlattices, are replaced in Fibonacci superlattices by more complex oscillations displaying quasiperiodic signatures, thus sheding more light onto the very peculiar nature of the electronic states in these systems.Comment: 7 pagex, RevTex, 5 Postscript figures. Physical Review B (in press

Group IV functionalization of low index waveguides

Low fabrication error sensitivity, integration density, channel scalability, low switching energy and low insertion loss are the major prerequisites for future on-chip WDM systems and interfacing with optical fibres. A number of device geometries have already been demonstrated that fulfil these criteria, at least in part, but combining all of the requirements is still a difficult challenge.Two contenders that could fulfil these criteria are the low loss nitride waveguiding platform and the high index group IV compounds for active photonic devices. Silicon Oxynitride (SiON) and Silicon Nitride (SiN) based waveguides are extremely powerful and central to today’s optical communications networks. The intermediate refractive index provides low footprint devices but eases the fabrication demands that can result in phase errors and repeatability problems in the all silicon approach. This enables multiplexers and demultiplexers with very low crosstalk and insertion loss and extremely low loss long range waveguides, making them very attractive for the optical backplanes and rack to rack links inside supercomputers and data centers. Group IV Photonics GeSi has a number of attractive optical characteristics for modulation, absorption and detection in a small volume area enabling low power and high density integration.Here, we propose and demonstrate a novel architecture consisting of the interfacing of a range of deposition method using low temperature PECVD and HWCVD nitride waveguides, Photonic crystal modulators [1] but also detectors [2] connected by a silicon nitride bus waveguide. The architecture features very high scalability due to the small size of the devices (~100 micrometre square) and the modulators operate with an AC energy consumption of less than 1fJ/bit