11 research outputs found
Interaction of One-Dimensional Photonic Crystals and Metal Nanoparticle Arrays and Its Application for Surface-Enhanced Raman Spectroscopy
We introduce a new
concept to localize and strongly enhance electromagnetic
fields by covering one-dimensional photonic crystals with ordered
metal nanoparticles arrays. When designed properly, the combined photonicâplasmonic
composite shows a significant interaction of the plasmonic resonance
and the photonic band gap. For this purpose we fabricated one-dimensional
photonic crystals based on porous silicon by electrochemical etching
of silicon in hydrofluoric acid and deposited a silver nanoparticle
array on top by nanosphere lithography. The composite structure was
designed in such a way that the plasmonic resonance coincides with
the photonic band gap, leading to highly confined electromagnetic
fields at the interface between both structures. The samples were
characterized using spectroscopic ellipsometry and reflectance measurements
and were modeled using effective medium theories and finite-element
methods. Surface-enhanced Raman spectroscopy measurements of this
unique photonicâplasmonic hybrid system show extraordinary
enhancement factors that can be explained only by an interaction mechanism.
The optical properties of the composite structure are very versatile,
providing a promising platform for improved sensing applications and
superior substrates for surface-enhanced Raman spectroscopy
Origin of the Broadband Photoluminescence of Pristine and Cu<sup>+</sup>/Ag<sup>+</sup>âDoped Ultrasmall CdS and CdSe/CdS Quantum Dots
Ultrasmall (âŒ2
nm) copperÂ(I)- and silverÂ(I)-doped CdS and
core/shell CdSe/CdS quantum dots (QDs) stabilized by CdÂ(II) complexes
with mercaptoacetate anions and ammonia were produced in aqueous solutions.
The doped QDs emit broadband visible photoluminescence (PL) with a
quantum yield reaching 10â12% for Cu<sup>+</sup>-doped QDs
and 5â9% for Ag<sup>+</sup>-doped QDs. The broadband PL was
described by a self-trapped exciton model as a sequence of phonon
replicas of a zero-phonon emission line. The shape of the PL bands
of CdS, Cu<sup>+</sup>-doped CdS QDs, and Ag<sup>+</sup>-doped CdS
QDs was modeled by using the energies of optical phonons of CdS, CuS,
and Ag<sub>2</sub>S, respectively. The dependence of the average PL
lifetime of both pristine and doped CdS and CdSe/CdS QDs on PL registration
wavelength was interpreted in terms of the vibrational relaxation
of the self-trapped exciton. The analysis of PL properties of different
ultrasmall metal chalcogenide QDs showed that the broadband PL can
be described by a general model which does not require the assumption
of participation of charge-trapping lattice defects
Highly Localized Strain in a MoS<sub>2</sub>/Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy
Tip-enhanced
Raman spectroscopy (TERS) has been rapidly improved
over the past decade and opened up opportunities to study phonon properties
of materials at the nanometer scale. In this Letter, we report on
TERS of an ultrathin MoS<sub>2</sub> flake on a nanostructured Au
on silicon surface forming a two-dimensional (2D) crystal/plasmonic
heterostructure. Au nanostructures (shaped in triangles) are prepared
by nanosphere lithography, and then MoS<sub>2</sub> is mechanically
exfoliated on top of them. The TERS spectra acquired under resonance
conditions at 638 nm excitation wavelength evidence strain changes
spatially localized to regions as small as 25 nm in TERS imaging.
We observe the highest Raman intensity enhancement for MoS<sub>2</sub> on top of Au nanotriangles due to the strong electromagnetic confinement
between the tip and a single triangle. Our results enable us to determine
the local strain in MoS<sub>2</sub> induced during heterostructure
formation. The maximum frequency shift of E<sub>2g</sub> mode is determined
to be (4.2 ± 0.8) cm<sup>â1</sup>, corresponding to 1.4%
of biaxial strain induced in the MoS<sub>2</sub> layer. We find that
the regions of maximum local strain correspond to the regions of maximum
topographic curvature as extracted from atomic force microscopy measurements.
This tip-enhanced Raman spectroscopy study allows us to determine
the built-in strain that arises when 2D materials interact with other
nanostructures
A Fine Size Selection of Brightly Luminescent Water-Soluble AgâInâS and AgâInâS/ZnS Quantum Dots
A size-selected series
of water-soluble luminescent AgâInâS
(AIS) and core/shell AIS/ZnS quantum dots (QDs) were produced by a
precipitation technique. Up to 10â11 fractions of size-selected
AIS (AIS/ZnS) QDs emitting in a broad color range from deep-red to
bluish-green were isolated with the photoluminescence (PL) quantum
yield reaching 47% for intermediate fractions. The size of the isolated
AIS (AIS/ZnS) QDs varied from âŒ2 to âŒ3.5 nm at a roughly
constant chemical composition of the particles throughout the fractions
as shown by the X-ray photoelectron spectroscopy. The decrease of
the mean AIS QD size in consecutive fractions was accompanied by an
increase of the structural QD imperfection/disorder as deduced from
a notable Urbach absorption âtailâ below the fundamental
absorption edge. The Urbach energy increased from 90â100 meV
for the largest QDs up to 350 meV for the smallest QDs, indicating
a broadening of the distribution of sub-bandgap states. Both the Urbach
energy and the PL bandwidth of the size-selected AIS QDs increased
with QD size reduction from 3â4 to âŒ2 nm, and a distinct
correlation was observed between these parameters. A study of size-selected
AIS and AIS/ZnS QDs by UV photoelectron spectroscopy on Au and FTO
substrates revealed their valence band level <i>E</i><sub>VB</sub> at âŒ6.6 eV (on Au) and âŒ7 eV (on FTO) pinned
to the Fermi level of conductive substrates resulting in a masking
of any possible size-dependence of the valence band edge position
Optical Absorption Imaging by Photothermal Expansion with 4 nm Resolution
For quite a long time, people thought
of the diffraction limit
of light as a fundamental unbreakable barrier that prevents seeing
objects with sizes smaller than half the wavelength of light. Super-resolution
optical methods and near-field optics enabled overcoming this limitation.
Here we report an alternative approach based on tracking the photothermal
expansion that a nano-object experiences upon visible light absorption,
applied successfully in the characterization of samples with a spatial/lateral
resolution down to 4 nm. Our device consists of an atomic force microscope
coupled with a solid-state laser and a mechanical chopper synchronized
with the natural oscillation mode of an in-house-made gold tip cantilever
system. This configuration enhances the detection of nanostructures
due to the intermittent light excitation and the consequent intermittent
thermal expansion of the sample under investigation. The sensitivity
and spatial resolution are further improved by the electric field
enhancement due to the excitation of localized surface plasmons at
the tip apex. Our concept is demonstrated by the analysis of a two-dimensional
material (GaSe) on crystalline sp<sup>2</sup> carbon (graphite) and
by an array of multiwalled carbon nanotubes lithographically designed
in a SiO<sub>2</sub> matrix. The photothermal expansion originating
from light absorption leads to an unprecedented spatial resolution
for an optical absorption event imaged below 10 nm
Origin and Dynamics of Highly Efficient Broadband Photoluminescence of Aqueous Glutathione-Capped Size-Selected AgâInâS Quantum Dots
The
2â3 nm size-selected glutathione-capped AgâInâS
(AIS) and core/shell AIS/ZnS quantum dots (QDs) were produced by precipitation/redissolution
from an aqueous colloidal ensemble. The QDs reveal broadband photoluminescence
(PL) with a quantum yield of up to 60% for the most populated fraction
of the core/shell AIS/ZnS QDs. The PL band shape can be described
by a self-trapped exciton model implying the PL band being a sequence
of phonon replica of a zero-phonon line resulting from strong electronâphonon
interaction and a partial conversion of the electron excitation energy
into lattice vibrations. It can be concluded that the position and
shape of the PL bands of AIS QDs originate not from energy factors
(depth and distribution of trap states) but rather from the dynamics
of the electronâphonon interaction and the vibrational relaxation
in the QDs. The rate of vibrational relaxation of the electron excitation
energy in AIS QDs is found to be size-dependent, increasing almost
twice from the largest to the smallest QDs
Determination of the Charge Transport Mechanisms in Ultrathin Copper Phthalocyanine Vertical Heterojunctions
Bulky
organic semiconductors have been widely applied on a variety of devices
including transistors, sensors, and organic light-emitting diodes.
Recently, the capability of producing stable ultrathin organic semiconductor-based
junctions has opened the possibility of a variety of novel device
concepts, including high-speed organic transistors, organic spin valves,
and biosensors. In such context, the investigation of the charge transport
mechanisms across ultrathin organic semiconductors is the key for
the engineering of emerging organic-based technologies. Here, the
charge transport mechanisms across heterojunctions based on physisorbed
ultrathin copper phthalocyanine on gold are precisely determined and
controlled over a wide range of temperatures and electric fields.
We observe that the macroscopic electrical characteristics of Au/CuPc/Au
heterojunctions are similar to what has been reported for chemisorbed
molecular junctions. For instance, the transition from thermally activated
transport to tunneling is verified regardless of the nature of the
molecule-contact bonding. The Au/CuPc/Au heterojunction transport
is dominated by charge localization sites at high temperatures and,
upon cooling, a continuous transition from direct tunneling, via resonant
tunneling, to field emission takes place by increasing the voltage
bias. Such a continuous transition has not been reported for a hybrid
metal/organic heterojunction yet. We have also determined the dielectric
constant of the CuPc molecular layer via transport measurements, which
allowed us to infer the possible molecule arrangements between the
electrodes
Stable Dispersion of Iodide-Capped PbSe Quantum Dots for High-Performance Low-Temperature Processed Electronics and Optoelectronics
Here, we present
a ligand exchange of long insulating molecules
with short, robust, and environmentally friendly iodide ions via a
mild flocculation of PbSe nanocrystals (NCs). This ligand exchange
leads to the formation of stable colloidal solutions in various polar
solvents and in a broad concentration range via electrostatic repulsion.
The iodide capping ligands preserve the electronic structure and maintain
the optical properties of the PbSe NCs, both in solution and in the
form of solid films. The spin-coated PbSe NC solids exhibit good transport
characteristics with electron mobilities in the linear and saturation
regimes reaching (2.1 ± 0.3) cm<sup>2</sup>/(V·s) and (2.9
± 0.4) cm<sup>2</sup>/(V·s), respectively. This opens up opportunities for the low-cost and low-temperature
fabrication of NC thin films being attractive for applications in
the fields of electronics and optoelectronics
Doping-Induced Polaron Formation and Solid-State Polymerization in BenzoporphyrinâOligothiophene Conjugated Systems
Benzoporphyrins
and their derivatives are of high interest in organic
semiconductor technology due to their peculiar physical properties
valuable for optoelectronic applications. Following our previous work
successfully developing <i>meso</i>-thienyl- or <i>meso</i>-bithiophenyl-substituted zinc benzoporphyrins as efficient
ternary components for bulk heterojunction solar cells, we describe
herein detailed spectroscopic studies on doping of solid films of
these benzoporphyrins under iodine atmosphere. Solid-state doping
and oxidative polymerization are investigated by Raman and Fourier
transform infrared spectroscopy. Structural and vibrational changes
upon doping are explored with supporting data from density functional
theory calculations. Furthermore, the optical and spectroscopic characteristics
of the films of these materials are also monitored during the doping,
and the polaron formation as evidenced by in situ attenuated total
reflection Fourier transform infrared and UVâvis spectroscopy
is observed. These results suggest that the target zinc benzoporphyrins,
both in monomeric and in polymeric forms, should be good candidates
in several other optoelectronic applications
Confirming the Dual Role of Etchants during the Enrichment of Semiconducting Single Wall Carbon Nanotubes by Chemical Vapor Deposition
The search for ways
to synthesize single wall carbon nanotubes
(SWCNT) of a given electronic type in a controlled manner persists
despite great challenges because the potential rewards are huge, in
particular as a material beyond silicon. In this work we take a systematic
look at three primary aspects of semiconducting enriched SWCNT grown
by chemical vapor deposition. The role of catalyst choice, substrate,
and feedstock mixture are investigated. In terms of semiconducting
yield enhancement, little influence is found from either the binary
catalyst or substrate choice. However, a very clear enrichment is
found as one adds nominal amounts of methanol to an ethanol feedstock.
Yields of up to 97% semiconducting SWCNT are obtained. These changes
are attributed to two known etchant processes. In the first, metal
SWCNT are preferentially etched. In the second, we reveal etchants
also preferentially etch small diameter tubes because they are more
reactive. The etchants are confirmed to have a dual role, to preferentially
etch metallic tubes and narrow diameter tubes (both metallic and semiconducting)
which results in a narrowing of the SWCNT diameter distribution