149 research outputs found
Optoelectronic properties of hexagonal boron nitride
École thématiqueI will discuss here our results on phonon-assisted recombination in hBN, from bulk crystals to few-layer samples. First, I will focus on hBN crystals where the combination of isotopic purification, Raman scattering and polarized-resolved photoluminescence allowed us to identify the different phonon modes involved in the efficient phonon-assisted recombination in bulk hBN. In a second part, I will discuss photoluminescence experiments in epilayers grown by high-temperature molecular beam epitaxy. These epilayers have a thickness of few monolayers of hBN, and I will show that phonon-assisted recombination displays a distinct phenomenology with a PL spectrum different from the one of bulk crystals
Ultra-coherent single photon source
We present a novel type of single photon source in solid state, based on the
coherent laser light scattering by a single InAs quantum dot. We demonstrate
that the coherence of the emitted single photons is tailored by the resonant
excitation with a spectral linewidth below the radiative limit. Our
ultra-coherent source opens the way for integrated quantum devices dedicated to
the generation of single photons with high degrees of indistinguishability
Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure
The light emission properties of color centers emitting in 3.3-4 eV region
are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium
temperature. The light emission energy decreases with pressure less sensitively
than the bandgap. This behavior at variance from the shift of the bandgap is
typical of deep traps. Interestingly, hydrostatic pressure reveals the
existence of levels that vary differently under pressure (smaller increase of
the emission wavelength compared to the rest of the levels in this energy
region or even decrease of it) with pressure. This discovery enriches the
physics of the color centers operating in the UV in hBN.Comment: 16 pages, 3 figure
Dephasing processes in a single semiconductor quantum dot
International audienceWe discuss the decoherence dynamics in a single semiconductor quantum dot and analyze two dephasing mech- anisms. In the ¯rst part of the review, we examine the intrinsic source of dephasing provided by the coupling to acoustic phonons. We show that the non-perturbative reaction of the lattice to the interband optical transition results in a composite optical spectrum with a central zero-phonon line and lateral side-bands. In fact, these acoustic phonon side-bands completely dominate the quantum dot optical response at room temperature. In the second part of the paper, we focus on the extrinsic dephasing mechanism of spectral di®usion that determines the quantum dot decoherence at low temperatures. We interpret the variations of both width and shape of the zero- phonon line as due to the °uctuating electrostatic environment. In particular, we demonstrate the existence of a motional narrowing regime in the limit of low incident power or low temperature, thus revealing an unconventional phenomenology compared to nuclear magnetic resonance
Boron nitride for excitonics, nano photonics, and quantum technologies
We review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton-phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 yin in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.This work was financially supported in France by the contract BONASPES (ANR-19-CE30-0007-02) under the umbrella of the publicly funded Investissements d'Avenir program managed by the French ANR agency. This work has been supported in Spain the Spanish MINECO/FEDER under Contracts No. MAT2015-71035-R and No. MAT2016-75586-C4-1-P.Peer reviewe
Unifying the low-temperature photoluminescence spectra of carbon nanotubes: the role of acoustic phonon confinement
At low temperature the photoluminescence of single-wall carbon nanotubes show
a large variety of spectral profiles ranging from ultra narrow lines in
suspended nanotubes to broad and asymmetrical line-shapes that puzzle the
current interpretation in terms of exciton-phonon coupling. Here, we present a
complete set of photoluminescence profiles in matrix embedded nanotubes
including unprecedented narrow emission lines. We demonstrate that the
diversity of the low-temperature luminescence profiles in nanotubes originates
in tiny modifications of their low-energy acoustic phonon modes. When low
energy modes are locally suppressed, a sharp photoluminescence line as narrow
as 0.7 meV is restored. Furthermore, multi-peak luminescence profiles with
specific temperature dependence show the presence of confined phonon modes
Optically-gated resonant emission in single quantum dots
We report on the resonant emission in coherently-driven single semiconductor
quantum dots. We demonstrate that an ultra-weak non-resonant laser acts as an
optical gate for the quantum dot resonant response. We show that the gate laser
suppresses Coulomb blockade at the origin of a resonant emission quenching, and
that the optically-gated quantum dots systematically behave as ideal two-level
systems in both regimes of coherent and incoherent resonant emission
Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble
We present the experimental evidence of giant optical anisotropy in single
InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals
a linear polarization ratio with huge fluctuations, from one quantum dot to
another, in sign and in magnitude with absolute values up to 82%. Systematic
measurements on hundreds of quantum dots coming from two different laboratories
demonstrate that the giant optical anisotropy is an intrinsic feature of dilute
quantum-dot arrays.Comment: submitted to Applied Physics Letter
Elastic exciton-exciton scattering in photoexcited carbon nanotubes
International audienceWe report on original nonlinear spectral hole-burning experiments in single wall carbon nanotubes that bring evidence of pure dephasing induced by exciton-exciton scattering. We show that the collision-induced broadening in carbon nanotubes is controlled by exciton-exciton scattering as for Wannier excitons in inorganic semiconductors, while the population relaxation is driven by exciton-exciton annihilation as for Frenkel excitons in organic materials. We demonstrate that this singular behavior originates from the intrinsic one-dimensionality of excitons in carbon nanotubes, which display unique hybrid features of organic and inorganic systems
- …