Optoelectronic properties of hexagonal boron nitride

École thématiqueI will discuss here our results on phonon-assisted recombination in hBN, from bulk crystals to few-layer samples. First, I will focus on hBN crystals where the combination of isotopic purification, Raman scattering and polarized-resolved photoluminescence allowed us to identify the different phonon modes involved in the efficient phonon-assisted recombination in bulk hBN. In a second part, I will discuss photoluminescence experiments in epilayers grown by high-temperature molecular beam epitaxy. These epilayers have a thickness of few monolayers of hBN, and I will show that phonon-assisted recombination displays a distinct phenomenology with a PL spectrum different from the one of bulk crystals

Ultra-coherent single photon source

We present a novel type of single photon source in solid state, based on the coherent laser light scattering by a single InAs quantum dot. We demonstrate that the coherence of the emitted single photons is tailored by the resonant excitation with a spectral linewidth below the radiative limit. Our ultra-coherent source opens the way for integrated quantum devices dedicated to the generation of single photons with high degrees of indistinguishability

Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure

The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of levels that vary differently under pressure (smaller increase of the emission wavelength compared to the rest of the levels in this energy region or even decrease of it) with pressure. This discovery enriches the physics of the color centers operating in the UV in hBN.Comment: 16 pages, 3 figure

Dephasing processes in a single semiconductor quantum dot

International audienceWe discuss the decoherence dynamics in a single semiconductor quantum dot and analyze two dephasing mech- anisms. In the ¯rst part of the review, we examine the intrinsic source of dephasing provided by the coupling to acoustic phonons. We show that the non-perturbative reaction of the lattice to the interband optical transition results in a composite optical spectrum with a central zero-phonon line and lateral side-bands. In fact, these acoustic phonon side-bands completely dominate the quantum dot optical response at room temperature. In the second part of the paper, we focus on the extrinsic dephasing mechanism of spectral di®usion that determines the quantum dot decoherence at low temperatures. We interpret the variations of both width and shape of the zero- phonon line as due to the °uctuating electrostatic environment. In particular, we demonstrate the existence of a motional narrowing regime in the limit of low incident power or low temperature, thus revealing an unconventional phenomenology compared to nuclear magnetic resonance

Boron nitride for excitonics, nano photonics, and quantum technologies

We review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton-phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 yin in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.This work was financially supported in France by the contract BONASPES (ANR-19-CE30-0007-02) under the umbrella of the publicly funded Investissements d'Avenir program managed by the French ANR agency. This work has been supported in Spain the Spanish MINECO/FEDER under Contracts No. MAT2015-71035-R and No. MAT2016-75586-C4-1-P.Peer reviewe

Unifying the low-temperature photoluminescence spectra of carbon nanotubes: the role of acoustic phonon confinement

At low temperature the photoluminescence of single-wall carbon nanotubes show a large variety of spectral profiles ranging from ultra narrow lines in suspended nanotubes to broad and asymmetrical line-shapes that puzzle the current interpretation in terms of exciton-phonon coupling. Here, we present a complete set of photoluminescence profiles in matrix embedded nanotubes including unprecedented narrow emission lines. We demonstrate that the diversity of the low-temperature luminescence profiles in nanotubes originates in tiny modifications of their low-energy acoustic phonon modes. When low energy modes are locally suppressed, a sharp photoluminescence line as narrow as 0.7 meV is restored. Furthermore, multi-peak luminescence profiles with specific temperature dependence show the presence of confined phonon modes

Optically-gated resonant emission in single quantum dots

We report on the resonant emission in coherently-driven single semiconductor quantum dots. We demonstrate that an ultra-weak non-resonant laser acts as an optical gate for the quantum dot resonant response. We show that the gate laser suppresses Coulomb blockade at the origin of a resonant emission quenching, and that the optically-gated quantum dots systematically behave as ideal two-level systems in both regimes of coherent and incoherent resonant emission

Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble

We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another, in sign and in magnitude with absolute values up to 82%. Systematic measurements on hundreds of quantum dots coming from two different laboratories demonstrate that the giant optical anisotropy is an intrinsic feature of dilute quantum-dot arrays.Comment: submitted to Applied Physics Letter

Elastic exciton-exciton scattering in photoexcited carbon nanotubes

International audienceWe report on original nonlinear spectral hole-burning experiments in single wall carbon nanotubes that bring evidence of pure dephasing induced by exciton-exciton scattering. We show that the collision-induced broadening in carbon nanotubes is controlled by exciton-exciton scattering as for Wannier excitons in inorganic semiconductors, while the population relaxation is driven by exciton-exciton annihilation as for Frenkel excitons in organic materials. We demonstrate that this singular behavior originates from the intrinsic one-dimensionality of excitons in carbon nanotubes, which display unique hybrid features of organic and inorganic systems