Portable device integrating an ultrasensitive mechanical crack-based sensor for the wireless monitoring of cardiac activity

International audienceFlexible crack-based strain sensors showing a maximum gauge factor of 30,000 at 0.2% strain level are elaborated by means of Atomic Layer Deposition and e-beam evaporation. It is shown that the mechanosensitivity can be drastically boosted by encapsulating the cracks with a photoresist layer. A non-invasive portable device integrating this ultrasensitive flexible transducer is then developed to monitor the cardiac activity at rest. The presented prototype integrates a Bluetooth Low Energy wireless interface for realtime communication with an Android mobile device

Study of the Electrical and Electronic Properties of Domains and Domain Walls in Ferroelectrics Combining AFM and STEM Techniques

International audienc

Growth of Hexagonal Germanium on self-assisted GaAs Nanowires by MBE

International audienc

Growth and Characterization of Hexagonal Germanium on Self-Assisted GaAs Nanowires by MBE

National audienc

METAMORFOSIS DE LA LIBERTAD. FIGURAS DE LA LIBERTAD Y MÁSCARAS DEL PODER

Il saggio è una riflessione su libertà e potere a partire da un confronto tra il pensiero di Michel Foucault ed Elias Canetti al riguardo. In particolare, il saggio compie uno spoglio degli ultimi corsi di lezione di Foucault sul tema e li mette in relazione con "Massa e potere" il capolavoro di Canetti, che resta un punto di critica irriducibile della questione sia sul piano antropologico che su quello filosofico politico. Il risultato teorico raggiunto, dopo aver attraversato la classica distinzione tra la libertà degli antichi e la libertà dei moderni, consiste nella conquista di un'opposizione dinamica tra i due termini; opposizione tra forze reali contrarie, ma non logicamente contraddittorie, di cui l'autore si impegna a dimostrare la capacità di essere consensiva ad ogni altra categoria della politica

Study of the Electrical and Electronic Properties of Domains and Domain Walls in Ferroelectrics Combining AFM and STEM Techniques

International audienc

MBE-growth of hex-Ge shells

International audienc

Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowires

International audienceHexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the fabrication of hexagonal group IV semiconductors within the vapor–liquid–solid method has been obtained using gold as a catalyst thus far. In this letter, we show the synthesis of hexagonal Ge on self-assisted GaAs nanowires using molecular beam epitaxy. With an accurate tuning of the Ga and As molecular beam flux, we selected the crystal phase, cubic or hexagonal, of the GaAs NWs during the growth. A 500-nm-long hexagonal segment of Ge with high structural quality and without any visible defects is obtained, and we show that Ge keeps the crystal phase of the core using scanning transmission electron microscopy. Finally X-ray photoelectron spectroscopy reveals a strong incorporation of As in the Ge. This study demonstrates the first growth of hexagonal Ge in the Au-free approach, integrated on silicon substrate

Indium-Oxide Nanoparticles for RRAM devices compatible with CMOS backend- off-line

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PEALD of Pt nanoparticles: towards the development of single electron transistors and flexible strain sensors

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