Technological and geometrical optimisation of InP HBT driver circuit

The design of high speed circuits and optimization in function of technological and geometrical parameters are presented. MUX-driver design and optimization for 40 Gb/s ETDM transmission illustrate the proposed approach. The impact of collector thickness (WC) on driver performances is evaluated and assessed by circuit fabrication and measurements. 40 Gb/s electrical measurements of the realized MUX-driver module are presented

First case of delayed ivermectin peripheral neuropathy

Résumé de la communication accessible dans le Fundamental & Clinical Pharmacology, n°19 issue 2 (2005), p.234International audienc

Embedded Mechanical Stress Sensors for Advanced Process Control

Publication suite au congrès : Advanced Semiconductor Manufacturing Conference, 2007. ASMC 2007. IEEE/SEMIInternational audienceFor state of the art microelectronic technologies, reliability is a major challenge. Mechanical stress induced by the process steps is often at the origin of yield losses. Degradations of electronic devices are usually correlated to the presence of defects such as dislocations, cracks or delaminations. Usual methods for mechanical stress measurement generally require off-line measurements and are not compatible with fast correction of process parameters. We propose here embedded stress microsensors to allow fast monitoring of mechanical stress and enable real time correction of the process parameters. The test vehicle presented here is dedicated to polysilicon stress monitoring. Its feasibility, sensitivity and relevance in an advanced process control objective are particularly investigated

La résistance à la sécheresse du soja I. - Influence d'un déficit hydrique sur la croissance et la production

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Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors

International audienceThe 1/f noise of double InP/InGaAs heterojunction bipolar transistors is measured and analyzed. Standard mesa transistors, transistors with an air-bridge-connected base and hexagonal shaped transistors conceived for digital circuits are studied. These differences in the technology will have an influence on the origin of the noise sources. Regarding noise analysis, the base and collector internal current noise sources ib and ic are assumed to be correlated for all devices. This is highlighted by the voltage noise correlation function between the input and the output of the devices presenting an unusual behavior versus bias and geometry. The collector current noise source is divided into a correlated and uncorrelated part with base current. These parts give rise to spectral densities Sc and Snc. They are shown to have distinct origins for the different types of transistor geometry

La résistance à la sécheresse du soja II. - Etude des réactions variétales à un déficit hydrique

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Oleylamine-assisted solvothermal synthesis of copper antimony sulfide nanocrystals: Morphology and phase control

International audienceWe report a one-pot synthesis of copper antimony sulfide nanocrystals by a facile and easily scalable route using a surfactant assisted solvothermal method. Phase-pure and quasi-monodisperse Cu3SbS4 nanocrystals have successfully been synthetized by adjusting the sulfur to copper molar ratio as well as the surfactant to solvent volumetric ratio. Nanocrystals morphology and chemical composition are characterized. As synthetized and purified nanocrystals are formulated into a colloidal suspension in order to fabricate copper antimony sulfide films. Morphological, electrical and optical characterizations of famatinite films are conducted. The electrical resistivity of the as deposited films is comprised between 10 Ω cm and 48 Ω cm. The optical gap is found to be indirect with a value of 0.82 eV

Recurrence of post-anaesthesia Guillain-Barre syndrome: two case reports

Résumé de la communication accessible dans le Fundamental & Clinical Pharmacology, n°22, supplément 1, 2008, p.79International audienc

Low-frequency noise in InP/InGaAs heterojunction bipolar transistors with different technologies

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Low frequency noise of InP/InGaAs heterojunction bipolar transistors

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