Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

We review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN). In such systems, the formation of stable N-H complexes removes the effects that nitrogen has on the alloy properties, thus enabling the in-plane engineering of the band bap energy of the system. Both a lithographic approach and/or a near-field optical illumination—coupled to the ultra-sharp diffusion profile of H in dilute nitrides—allow us to control the hydrogen implantation and/or removal on a nanometer scale. This, eventually, makes it possible to fabricate site-controlled quantum dots that are able to emit single photons on demand. The strategy for a deterministic spatial and spectral coupling of such quantum emitters with photonic crystal cavities is also presented

Photonic Jets and Single‐Photon Emitters

Photonic jets (PJs) obtained by illuminating a dielectric microsphere have recently shown to provide an efficient and cost-effective means of laser-writing and localizing single-photon emitters with sub-diffraction precision. The fabrication technique relies on the photoinduced formation of GaAsN quantum dots (QDs) that are self-aligned to the microsphere, which in turn enhances the collection efficiency of their emission. Similarly, the angular magnification introduced by a microsphere placed on top of two close emitters allows to detect and resolve their separation below the diffraction limit by analyzing their angular emission pattern in momentum space. Along with a brief review of the two methods, a systematic numerical study on the formation and properties of PJs to streamline the optimization of the fabrication process is presented

Spatial steadiness of individual disorder modes upon controlled spectral tuning

Recent innovative applications in disordered photonics would strongly benefit from the possibility to achieve spectral tuning of the individual disorder localized photonic modes without affecting their spatial distributions. Here, we design and fabricate a two-dimensional disordered photonic system, made of a GaAs slab patterned with randomly distributed circular air scattering centers, supporting localized light modes with very small modal volume. The photoluminescence of InAs quantum dots embedded in the slab is used as a probe for near field experiments and gives direct access to the electric field intensity distribution of the localized random modes. We demonstrate that laser assisted oxidation of the GaAs slab performed by near field illumination can be used for a gentle tuning of the individual random modes without modifying the subtle balance leading to light localization given by multiple scattering

Near-field speckle imaging of light localization in disordered photonic

Optical localization in strongly disordered photonic media is an attractive topic for proposing novel cavity-like structures. Light interference can produce random modes confined within small volumes, whose spatial distribution in the near-field is predicted to show hot spots at the nanoscale. However, these near-field speckles have not yet been experimentally investigated due to the lack of a high spatial resolution imaging techniques. Here, we study a system where the disorder is induced by random drilling air holes in a GaAs suspended membrane with internal InAs quantum dots. We perform deep-subwavelength near-field experiments in the telecom window to directly image the spatial distribution of the electric field intensity of disordered-induced localized optical modes. We retrieve the near-field speckle patterns that extend over few micrometers and show several single speckles of the order of λ/10 size. The results are compared with the numerical calculations and with the recent findings in the literature of disordered media. Notably, the hot spots of random modes are found in proximity of the air holes of the disordered system

Large-Area Nanocrystalline Caesium Lead Chloride Thin Films: A Focus on the Exciton Recombination Dynamics

Caesium lead halide perovskites were recently demonstrated to be a relevant class of semiconductors for photonics and optoelectronics. Unlike CsPbBr3 and CsPbI3, the realization of high-quality thin films of CsPbCl3, particularly interesting for highly efficient white LEDs when coupled to converting phosphors, is still a very demanding task. In this work we report the first successful deposition of nanocrystalline CsPbCl3 thin films (70–150 nm) by radio frequency magnetron sputtering on large-area substrates. We present a detailed investigation of the optical properties by high resolution photoluminescence (PL) spectroscopy, resolved in time and space in the range 10–300 K, providing quantitative information concerning carriers and excitons recombination dynamics. The PL is characterized by a limited inhomogeneous broadening (~15 meV at 10 K) and its origin is discussed from detailed analysis with investigations at the micro-scale. The samples, obtained without any post-growth treatment, show a homogeneous PL emission in spectrum and intensity on large sample areas (several cm2). Temperature dependent and time-resolved PL spectra elucidate the role of carrier trapping in determining the PL quenching up to room temperature. Our results open the route for the realization of large-area inorganic halide perovskite films for photonic and optoelectronic devices

Fabrication of Cu2ZnSnS4 solar cells by sulfurization of evaporated precursors

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