Modelling Photovoltaic Panels (Tandem) In Matlab-Simulink

At the stage of development of solar photovoltaic; the direct conversion of energy carried by the solar radiation into electricity, but before consuming, it took to produce using solar panels. Modeling of solar cells is based on their electrical characteristics (relationship voltage / current) under various conditions of radiation and temperature obtained by the equivalent circuit model, we consider associations with cells semiconductors respectful individuals such as: if, AlGaAs, Tandem, we integrate this model with Matlab simulink. The aim of this work is modeled solar panels; Tandem (coupled AlGaAs / Si). This modeling is an essential step to evaluate the characteristics of photovoltaic solar panels

Investigation of Absorber Layer Thickness Effect on CIGS Solar Cell in Different Cases of Buffer Layers

This study investigates the interplay between the absorber layer of Cu(In,Ga)Se2 solar cells and the buffer layer of these devices. Cu(In,Ga)Se2 devices with absorbers of different thicknesses and different buffer layers are simulated. We found that the reduction in thickness of the CIGS cell leads to decrease shortcircuit current, it is the main cause of degradation photovoltaic conversion efficiency. It has been found that substitution of the CdS buffer layer by other materials such as ZnS can limit this performance degradation

The Role of Mirror Dichroic in Tandem Solar Cell GaAs/Si

The good choice of the mirror dichroic between two solar cells was key to the development of the first two-terminal monolithic, multi-junction solar cell. In this paper describes a simulation for mirror dichroic between the first cell (GaAs) and second cell (Si ). In the simulation, Spectrum of the mirror Issued to first cell is changed the 0.3 ?m to0.6 ?m and the rest of the spectrum turns to the second cell. the By varying the mirror dichroic was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE). Keywords: multi-junction, mirror dichroic, quantum efficiency

Optimization of a Tandem Solar Cell GaAs / Ge using AMPS-1D

The  primary  objective  of  this  modeling  investigation  is  to  optimize  a  multi-junction tandem  device under  the AM1.5G  spectrum. Based on previous studies, GaAs and Ge cells, because of their energy band gaps, can be combined together to achieve high-efficiency double-junction devices. In this study, the top cell is made of GaAs (1.42 eV) while the bottom cell is made of Ge (0.66 eV). In order to avoid the losses and design constraints observed in two-terminal and four-terminal devices. In order to determine the optimal structure of the device,  the top and bottom junctions were investigated and  optimized with regard to the thicknesses . The optimum configuration of the device shows an efficiency of 32.07% under the AM1.5G spectrum and one sun, which is higher than the efficiency of an optimized single-junction Si cell under the same illumination conditions. Keywords: AMPS-1D, multi-junction, Ge, GaAs, optimization

Simulation of Hetero-junction (GaInP/GaAs) Solar Cell Using AMPS-1D

Photovoltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP / GaAs configuration for p/n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency

Triple junction solar cell with Cu In1-x Gex Se as absorbents layers

The design of multi-junction solar cells is guided by both the theoretical optimum bandgap combinations as well as the realistic limitations to materials with these bandgaps. Nowadays, triple-junction III-V multi-junction solar cells are commonly used as GaAs, InGaAs; InGaP ... In this work, we are interested in studying triple junctions based on thin-film solar cells Cu(In1-xGax) Se2, CuInSe2, and CuGaSe2 quaternaries using Silvaco ATLAS software. Incorporating Cu(In0.34Ga0.66) Se2 as an absorber in the middle sub-cell increased the open-circuit voltage by 0.72 V. The highest cell efficiency is 20.89 % (Voc = 2.33 V, Jsc = 9.97 mA/cm2, FF = 89.62%). This triple-junction solar cell demonstrates the potential and limitations of future improvements when voltage and current are considered

Simulation of Hetero-junction (GaInP/GaAs) Solar Cell Using AMPS-1D

Photovoltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP / GaAs configuration for p/n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency

Modeling of Tunnel Junction (GaAs) in the Cascade Solar Cell

In this paper describes a simple model for tunnel junction (GaAs) between the top cell (GaAs) and bottom cell (Ge) of cascade solar cells. We theoretically studied the electrical characteristics (IV) of GaAs tunnel diode with the accounting program MATLAB for doping concentration of the junction after Using this model between two cascaded solar cell (GaAs / Ge) and we calculate the electrical characteristics and performance using AMPS-1D software. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance