24,390 research outputs found

    Thermoelectric bonding study. the bonding of pbte and pbte-snte with non-magnetic electrodes

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    Low resistance, high strength, nonmagnetic electrode bonding to lead telluride and lead- telluride-tin telluride alloy

    Lead telluride non-magnetic bonding research study Second quarterly report, 1 Jun. - 31 Aug. 1965

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    Diffusion and braze bonding of tungsten and tantalum to lead telluride and lead telluride- tin telluride thermoelectric alloy

    Lead telluride non-magnetic bonding research study Third quarterly report, Sep. 1 - Nov. 30, 1965

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    Diffusion bonding of tungsten electrodes to lead tellurium and lead tellurium-tin tellurium thermocouple

    ALSEP termination report

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    The Apollo Lunar Surface Experiments Package (ALSEP) final report was prepared when support operations were terminated September 30, 1977, and NASA discontinued the receiving and processing of scientific data transmitted from equipment deployed on the lunar surface. The ALSEP experiments (Apollo 11 to Apollo 17) are described and pertinent operational history is given for each experiment. The ALSEP data processing and distribution are described together with an extensive discussion on archiving. Engineering closeout tests and results are given, and the status and configuration of the experiments at termination are documented. Significant science findings are summarized by selected investigators. Significant operational data and recommendations are also included

    Lead telluride bonding and segmentation study Semiannual phase report, Aug. 1, 1967 - Jan. 31, 1968

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    Constitutional studies of SnTe and Si-Ge metal systems, segmented Si-Ge-PdTe thermocouple efficiencies, and pore migration in PbSnTe thermoelement

    Lead telluride bonding and segmentation study Interim report, 1 Nov. 1966 - 31 Jul. 1967

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    Lead telluride bonding and segmentation studies including couple design, test devices, and life testin

    Lost Decades: Lessons from Post-Independence Latin America for Today's Africa

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    Africa and Latin America secured their independence from European colonial rule a century and half apart: most of Latin America after 1820 and most of Africa after 1960. Despite the distance in time and space, they share important similarities. In each case independence was followed by political instability, violent conflict and economic stagnation lasting for about a half-century (lost decades). The parallels suggest that Africa might be exiting from a period of post-imperial collapse and entering a period of relative political stability and economic growth, as did Latin America a century and a half earlier.

    Thick film silicon growth techniques

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    Thick film silicon ribbons were produced by means of the edge-defined, film-fed growth (EFG) technique. EFG is a process by which single crystals may be grown having a shape controlled by the outside dimensions of a die, the growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The principal problem to be overcome in the application of this process to the growth of thick film silicon ribbon relates to the material, such as the shaping die. For the method to operate, this die material must be wet by the liquid silicon. To preserve semiconductor quality, the liquid silicon must not react significantly with the die material. The most promising die material for this application appears to be SiC and SiC-SiO2 admixture. In this case good wetting occurs between the molten silicon and the SiC. C is a relatively unharmful contaminant of Si and additions of quartz to SiC are found to decrease the extent of reaction
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