Programmable Charge Trap for Junction-less selective extraction of holes in Solar Cells

Selective extraction of photo-generated carriers is a fundamental challenge in solar cells which is usually achieved through junctions with the associated doping as well as band offset differences. In this context, here we propose a new paradigm for selective extraction for majority carriers through novel usage of the programmable charge trap which comprises of Oxide-Nitride-Oxide (ONO) stack and has the primary function of holding electrically injected charge. Through detailed numerical simulations, here we show that such a charge trap with an additional metal contact can (i) compensate for efficiency loss due to sub-optimal passivation and sub-optimal hole selectivity in homojunction as well as transition metal oxide-based heterojunction solar cells and (ii) can also function as a standalone hole selection scheme. The proposed scheme, with its easy integration and the capability of programmable compensation of performance loss, is of interest to the photovoltaic community

Growth and properties of ZnO:Al on textured glass for thin film solar cells

Aluminium induced texturing (AIT) method has been used to texture glass substrates in order to enhance the photon absorption in thin film solar cells. The resultant glass roughness has been analyzed by varying the AIT process parameters and it has been found that the deposition method of Al is a decisive factor in tuning the texture. Two types of textures, a soft (texture E) and a rough texture (texture S), were achieved from the thermally evaporated and sputtered Al layers through AIT process. Aluminium-doped zinc oxide (AZO) layers of different thickness were deposited over both textures and over smooth glass. Haze values above 30% were obtained for texture S+AZO and above 10% for texture E+AZO. The resultant morphologies were free from sharp edges or deep valleys and the transparency and the resistivity values were also good enough to be used as front contact for thin film solar cells. In order to demonstrate the light absorption enhancement in a solar cell device, 200 nm of a-Si:H followed by 300nm of Ag were grown over the textured and smooth substrates with AZO, and an optical absorption enhancement of 35% for texture E and 53% for texture S was obtained in comparison to the smooth substrate

Fabrication of cost-effective, highly reproducible large area arrays of nanotriangular pillars for surface enhanced Raman scattering substrates

Development of cost-effective, highly reproducible non-conventional fabrication techniques for anisotropic metal nanostructures is essential to realizing potential applications of plasmonic devices, photonic devices, and surface enhanced Raman scattering (SERS) phenomenon based sensors. This report highlights the fabrication of nanotriangle arrays via nanoimprinting to overcome difficulties in creating large-area SERS active substrates with uniform, reproducible Raman signals. Electron beam lithography of anisotropic nanostructures, formation of arrays of nanotriangles in silicon and the transfer of triangular shapes to polymethylmethacrylate (PMMA) sheets via nanoimprinting have not been reported elsewhere. The reuse of silicon masters offers potential for production of low cost SERS substrates. The SERS activity and reproducibility of nanotriangles are illustrated and a consistent average enhancement factor of up to ~2.9 × 1011, which is the highest value reported for a patterned SERS substrate, is achieved.Peer ReviewedPostprint (author's final draft

Domain matched epitaxial growth of Bi1.5Zn1Nb1.5O7 thin films by pulsed laser deposition

Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60º twinning for the (222) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film

Aluminium induced texturing of glass substrates with improved light management for thin film solar cells

Aluminium induced texturing (AIT) method has been used to texture glass substrates to enhance photon absorption in microcrystalline thin film Si solar cells. In this process, a thin Al film is deposited on a glass substrate and a non-uniform redox reaction between the glass and the Al film occurs when they are annealed at high temperature. After etching the reaction products, the resultant glass surface presents a uniform and rough morphology. In this work, three different textures (­σrms ~85, ~95, ~125 nm) have been achieved by tuning the dc sputtering power and over them and over smooth glass, pin microcrystalline silicon solar cells have been fabricated. The cells deposited over the textured substrates showed an efficiency improvement in comparison to the cells deposited over the smooth glass. The best result was given for the glass texture σrms~125 nm that led to an average efficiency 2.1% higher than that given by the cell deposited on smooth glas

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

Transparent and conducting ZnO:Er:Yb thin films with visible up-conversion (660-nm emission under 980-nm excitation) were fabricated by RF magnetron sputtering. The as-deposited films were found to be transparent and conducting and the activation of the Er ions in these films to produce up-conversion luminescence was achieved by different post deposition annealing treatments in air, vacuum or by laser annealing using a Nd:YVO4 laser. The structural, electrical and optical properties and the up-conversion efficiency of these films were found to be strongly influenced by the annealing method, and a detailed study is reported in this paper. It has been demonstrated that, although the air annealing was the most efficient in terms of up-conversion, laser annealing was the only method capable of activating Er ions while preserving the electrical conductivity of the doped films. It has been shown that a minimum energy was needed in laser annealing to optically activate the rare earth ions in the ZnO host material to produce up-conversion. Up-converting and transparent conducting ZnO:Er:Yb films with an electrical resistivity of 5×10-2 Ω·cm and transparency ~80% in the visible wavelength range has been achieved by laser annealing

Observation of room temperature photoluminescence from asymmetric CuGaO2/ZnO/ZnMgO multiple quantum well structures

Asymmetric (CuGaO2/ZnO/ZnMgO) and symmetric (ZnMgO/ZnO/ZnMgO) multiple quantum well (MQW) structures were successfully fabricated using pulsed laser deposition (PLD) and their comparison were made. Efficient room temperature photoluminescent (PL) emission was observed from these MQWs and temperature dependent luminescence of asymmetric and symmetric MQWs can be explained using the existing theories. A systematic blue shift was observed in both MQWs with decrease in the confinement layer thickness which could be attributed to the quantum confinement effects. The PL emission from asymmetric and symmetric MQW structures were blue shifted compared to 150 nm thick ZnO thin film grown by PLD due to quantum confinement effects