Research on Germanium-on-insulator (GOI) material and Si-based Ge waveguide photodetector

绝缘层上锗（Germanium-on-Insulator，GOI）由于结合了Ge材料及SOI材料各自的优点，是近年来兴起的、极具吸引力的Si基新型材料。GOI材料不仅具有高的电子和空穴迁移率，在通信波段有较高吸收系数，同时能够很好地解决体Ge材料在器件中的不足，从而在微电子和光电集成方面具有广阔的应用前景。基于GOI材料的波导型探测器，由于集合了GOI的优良特性及波导型结构的优势，能够同时实现高量子效率和高带宽，从而有效提高探测器性能。因此，开展GOI材料的制备及Ge波导型探测器的研制工作具有重要的意义。本文利用智能剥离技术结合键合方法制备了GOI材料，研究其材料特性，并开展了Si基Ge波导型...Germanium-on -Insulator (GOI), which combines the merits of Ge and SOI, is gaining interest as a newly emerged Si-based material. Besides the much higher carrier mobility and its favourable absorption coefficient in the near infrared wavelength regime (1.3~1.55 μm), the ability of overcoming potentially fatal flaws in bulk Ge devices is another practical advantage of GOI. Thus, GOI can be widely u...学位：工学博士院系专业：物理与机电工程学院_微电子学与固体电子学学号：1982009015367

Alloy Conditions Impact on Al/n~+-Ge Ohmic Contact

gE比SI具有更高的电子和空穴迁移率,且gE材料可以应用于1.3~1.5μM近红外波段,因此gE成为制备微电子和光电子器件的主要材料。然而由于gE的费密能级钉扎效应以及难以获得高浓度的磷(P)原位掺杂,使得n-gE的欧姆接触成为一个难题。采用P+离子注入获得高掺杂浓度的n-gE材料,掺杂浓度为1.5x1019CM-3;依据圆形传输线模型(CTlM)制备了一系列Al/n+-gE样品,研究了不同退火温度和退火方式对其接触特性的影响。实验结果表明,Al/n+-gE样品通过400℃快速热退火(rTA)30 S表现出欧姆接触特性,并且接触电阻率ρC最低,为1.3x10-5Ω·CM2。Germanium is used as the primary material on the micro-or opto-electronic devices,due to the much higher electron and hole mobility compared to Si,as well as its favorable absorption coefficient in the near infrared wavelength regime(1.3-1.5 μm).However,the ohmic contact formation on n-type Ge is still a challenge because of the severe Fermi level pinning effect of n-Ge and the low concentration of P-situ doping.Heavily-doped n-type Ge was achieved with phosphorus concentration of 1.5×1019cm-3 by the ion implantation.And then a series of Al/n+-Ge samples were prepared according to circular transmission line model(CTLM).The samples were annealed at different temperatures and with different annealing ways to analyze the contact characteristics.The test result indicate that the Al/n+-Ge contacts show ohmic characteristics by rapid thermal annealing(RTA) at 400 ℃ for 30 s,with the lowest contact resistivity ρc of 1.3×10-5 Ω·cm2.国家自然科学基金资助项目(61176050;61036003;61176092;60837001); 国家重点基础研究发展计划资助项目(2012CB933503;2013CB632103); 福建省基础研究基金资助项目(2012H0038); 中央高校基本科研基金资助项目(2010121056

GaN LED/metals/Si structure fabricated by bonding and laser-lift off

采用金属键合技术结合激光剥离技术将gAn基lEd从蓝宝石衬底成功转移到SI衬底上。利用X射线光电子谱(XPS)研究不同阻挡层对Au向gAn扩散所起的阻挡作用,确定键合所需的金属过渡层。利用多层金属过渡层,在真空、温度400℃和加压300 n下实现gAn基lEd和SI的键合,通过激光剥离技术将蓝宝石衬底从键合结构上剥离下来,形成gAn基lEd/金属层/SI结构。用金相显微镜及原子力显微镜(AfM)观察结构的表面形貌,测得表面粗糙度(rMS)为12.1 nM。X射线衍射(Xrd)和rAMAn测试结果表明,衬底转移后,gAn基lEd的结构及其晶体质量没有发生明显变化,而且gAn与蓝宝石衬底间的压应力得到了释放,使得SI衬底上gAn基lEd的电致发光(El)波长发生红移现象。The effect of different barrier layers on gold diffusing into GaN is analyzed by X-ray photoelectron spectroscopy(XPS).By using wafer bonding and laser lift-off(LLO),which uses a KrF excimer laser(248 nm) to separate GaN LED from sapphire substrate,an light emitting diode(LED) GaN epi layer is successfully transferred onto a Si substrate at the temperature of 400 ℃.The surface of samples after laser lift-off(LLO) is observed with microscope and atomic force microscope(AFM).The root-mean-square roughness of the transferred GaN LED surface is about 12.1 nm.The X-ray diffraction(XRD) and Raman test results show that the quality of LED on Si substrate has not obviously change,but the electroluminescence peak wavelength of GaN-based LED on Si substrate showes a red shift compared to that on sapphire substrate.国家自然科学基金重点基金资助项目(60837001);福建省自然科学基金资助项目(2008J0221);福建省教育厅科技项目(JB08215

XPS Study of the Interfaces of Low-temperature Si/Si Wafer Bonding

利用金属过渡层的方法实现了SI/SI低温键合.拉力测试表明,温度越高,键合强度越大.采用X射线光电子能谱对SI/SI键合界面进行了研究,结果表明,退火样品的界面主要为Au-SI共晶合金;SI-Au含量比随着退火温度的升高和刻蚀深度的增加而增大.Low-temperature wafer to wafer bonding has been achieved by using intermediate metals.Tensile test shows that the higher the bonding temperature is.The greater the bonding strengthis.The Si/Si interfaces are analyzed by using X-ray photoelectron spectroscopy(XPS).The results shows that the interface of the samples is made up of Au-Si eutectic alloy and the ratio of Si-Au increases with the annealing temperature increasing.国家自然科学基金重点基金资助项目(60837001);福建省自然科学基金资助项目(2008J0221);福建省教育厅科技项目(JB08215