采用金属键合技术结合激光剥离技术将gAn基lEd从蓝宝石衬底成功转移到SI衬底上。利用X射线光电子谱(XPS)研究不同阻挡层对Au向gAn扩散所起的阻挡作用,确定键合所需的金属过渡层。利用多层金属过渡层,在真空、温度400℃和加压300 n下实现gAn基lEd和SI的键合,通过激光剥离技术将蓝宝石衬底从键合结构上剥离下来,形成gAn基lEd/金属层/SI结构。用金相显微镜及原子力显微镜(AfM)观察结构的表面形貌,测得表面粗糙度(rMS)为12.1 nM。X射线衍射(Xrd)和rAMAn测试结果表明,衬底转移后,gAn基lEd的结构及其晶体质量没有发生明显变化,而且gAn与蓝宝石衬底间的压应力得到了释放,使得SI衬底上gAn基lEd的电致发光(El)波长发生红移现象。The effect of different barrier layers on gold diffusing into GaN is analyzed by X-ray photoelectron spectroscopy(XPS).By using wafer bonding and laser lift-off(LLO),which uses a KrF excimer laser(248 nm) to separate GaN LED from sapphire substrate,an light emitting diode(LED) GaN epi layer is successfully transferred onto a Si substrate at the temperature of 400 ℃.The surface of samples after laser lift-off(LLO) is observed with microscope and atomic force microscope(AFM).The root-mean-square roughness of the transferred GaN LED surface is about 12.1 nm.The X-ray diffraction(XRD) and Raman test results show that the quality of LED on Si substrate has not obviously change,but the electroluminescence peak wavelength of GaN-based LED on Si substrate showes a red shift compared to that on sapphire substrate.国家自然科学基金重点基金资助项目(60837001);福建省自然科学基金资助项目(2008J0221);福建省教育厅科技项目(JB08215
