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    126 research outputs found

    干法刻蚀Ⅲ-Ⅴ族化合物半导体材料的最新进展

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    偏镓砷(100)衬底双模尺寸分布铟砷量子点及制作方法

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    一种晶体管激光器及其制作方法

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    基于边入射光混频器的THz天线阵列

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    THz天线阵列的制作方法

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    由浅离子注入实现的MQW混合

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    用浅P~+离子注入InGaAs/InGaAsP应变多量子阱(MQW)激光器结构,经H_2/N_2混合气氛下的快速退火,体内MQW层发生组份混合,导致器件的带隙波长蓝移,结构的光荧光(PL)峰值波长向短波方向移动了76 nm
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