Thermal rectification and thermal logic gates in graded alloy semiconductors

Classical thermal rectification arises from the contact between two dissimilar bulk materials, each with a thermal conductivity (k) with a different temperature dependence. Here, we study thermal rectification in a SiGe alloy with a spatial dependence on the atomic composition. Rectification factors (R = k/k) of up to 3.41 were found. We also demonstrate the suitability of such an alloy for logic gates using a thermal AND gate as an example by controlling the thermal conductivity profile via the alloy composition. This system is readily extendable to other alloys, since it only depends on the effective thermal conductivity. These thermal devices are inherently advantageous alternatives to their electric counterparts, as they may be able to take advantage of otherwise undesired waste heat in the surroundings. Furthermore, the demonstration of logic operations is a step towards thermal computation

Modification of Akhieser mechanism in Si nanomembranes and thermal conductivity dependence of the Q-factor of high frequency nanoresonators

We present and validate a reformulated Akhieser model that takes into account the reduction of thermal conductivity due to the impact of boundary scattering on the thermal phonons' lifetime. We consider silicon nanomembranes with mechanical mode frequencies in the GHz range as textbook examples of nanoresonators. The model successfully accounts for the measured shortening of the mechanical mode lifetime. Moreover, the thermal conductivity is extracted from the measured lifetime of the mechanical modes in the high-frequency regime, thereby demonstrating that the Q-factor can be used as an indication of the thermal conductivity and/or diffusivity of a mechanical resonator

On the Enhancement of the Thermal Conductivity of Graphene-Based Nanofluids

Heat transfer fluids have been extensively used in both low-temperature and high temperature applications (e.g. microelectronics cooling and concentrated solar power). However, their low thermal conductivity is still a limit on performance. One way to enhance thermal properties is to disperse nanomaterials, such as graphene flakes in the base fluid. In this work, we have developed highly stable DMAc-graphene nanofluids with enhanced thermal properties. Furthermore, the displacement of several Raman bands as a function of graphene concentration in DMAc suggests that the solvent molecules are able to interact with graphene surfaces strongly

Modification of Akhieser mechanism in Si nanomembranes and thermal conductivity dependence of the Q-factor of high frequency nanoresonators

We present and validate a reformulated Akhieser model that takes into account the reduction of thermal conductivity due to the impact of boundary scattering on the thermal phonons' lifetime. We consider silicon nanomembranes with mechanical mode frequencies in the GHz range as textbook examples of nanoresonators. The model successfully accounts for the measured shortening of the mechanical mode lifetime. Moreover, the thermal conductivity is extracted from the measured lifetime of the mechanical modes in the high-frequency regime, thereby demonstrating that the Q-factor can be used as an indication of the thermal conductivity and/or diffusivity of a mechanical resonator

Thermoreflectance techniques and Raman thermometry for thermal property characterization of nanostructures

This AIP article is published under license by AIP: https://publishing.aip.org/wp-content/uploads/2019/10/AIPP-Author-License.pdfPublishing.https://pubs.acs.org/page/policy/authorchoice_termsofuse.htmlAltres ajuts: ICN2 is supported by the CERCA Programme/Generalitat de Catalunya.The widespread use of nanostructures and nanomaterials has opened up a whole new realm of challenges in thermal management, but also leads to possibilities for energy conversion, storage, and generation, in addition to numerous other technological applications. At the microscale and below, standard thermal measurement techniques reach their limits, and several novel methods have been developed to overcome these limitations. Among the most recent, contactless photothermal methods have been widely used and have proved their advantages in terms of versatility, temporal and spatial resolution, and even sensitivity in some situations. Among them, thermoreflectance and Raman thermometry have been used to measure the thermal properties from bulk materials to thin films, multilayers, suspended structures, and nanomaterials. This Tutorial presents the principles of these two techniques and some of their most common implementations. It expands to more advanced systems for spatial mapping and for probing of non-Fourier thermal transport. Finally, this paper concludes with discussing the limitations and perspectives of these techniques and future directions in nanoscale thermometry

One-step production of fluorescent encoded polystyrene microparticles using flow focusing. Potencial applicatios in high-throughput screening

15th International Symposium on Microencapsulation September 18-21, 2005 Parma (Italy

Thermal conductivity of epitaxially grown InP : experiment and simulation

Altres ajuts: Catalan AGAURThe integration of III-V optoelectronic devices on silicon is confronted with the challenge of heat dissipation for reliable and stable operation. A thorough understanding and characterization of thermal transport is paramount for improved designs of, for example, viable III-V light sources on silicon. In this work, the thermal conductivity of heteroepitaxial laterally overgrown InP layers on silicon is experimentally investigated using microRaman thermometry. By examining InP mesa-like structures grown from trenches defined by a SiO mask, we found that the thermal conductivity decreases by about one third, compared to the bulk thermal conductivity of InP, with decreasing width from 400 to 250 nm. The high thermal conductivity of InP grown from 400 nm trenches was attributed to the lower defect density as the InP microcrystal becomes thicker. In this case, the thermal transport is dominated by phonon-phonon interactions as in a low defect-density monocrystalline bulk material, whereas for thinner InP layers grown from narrower trenches, the heat transfer is dominated by phonon scattering at the extended defects and InP/SiO interface. In addition to the nominally undoped sample, sulfur-doped (1 × 10 cm) InP grown on Si was also studied. For the narrower doped InP microcrystals, the thermal conductivity decreased by a factor of two compared to the bulk value. Sources of errors in the thermal conductivity measurements are discussed. The experimental temperature rise was successfully simulated by the heat diffusion equation using the FEM

Exciton tuning and strain imaging in WS2supported on PDMS micropillars

Since the raise of 2D materials, significant research has been dedicated to their strain-dependent electronic and mechanical properties. In this work, we studied exciton energies and low-frequency phonon modes in CVD-grown mono- and few-layer WS2 transferred on PDMS micropillars. The modification of the band structure under strain was investigated by photoluminescence (PL) spectroscopy at room temperature. Machine learning (ML) methods were used to analyze the PL spatial maps and facilitate the spectral deconvolution. For monolayer (1L) WS2, red shift in the exciton energy was detected as a function of the position, which was ascribed to the presence of residual strain. For three-layer (3L) strained WS2, a significant increase in the PL intensity corresponding to direct (K-K) band transition together with a change of exciton energy was observed. From the PL spectra, strain distribution maps were extracted for both studied samples, which strongly resembled the ML clustering results. Finally, the low-frequency Raman modes of WS2 were studied on both Si/SiO2 and PDMS substrates and no significant change of their frequency was observed for the 3L-WS2

Contactless characterization of the elastic properties of glass microspheres

Glass microspheres are of great interest for numerous industrial, biomedical, or standalone applications, but it remains challenging to evaluate their elastic and optical properties in a non-destructive way. In this work, we address this issue by using two complementary contactless techniques to obtain elastic and optical constants of glass microspheres with diameters ranging from 10 to 60 µm. The first technique we employ is Brillouin Light Scattering, which yields scattering with longitudinal acoustic phonons, the frequency of which is found to be 5% lower than that measured in the bulk material. The second technique involves exciting the optical whispering gallery modes of the microspheres, which allows us to transduce some of their vibrational modes. The combined data allow for extracting the refractive index and the elastic constants of the material. Our findings indicate that the values of those properties are reduced with respect to their bulk material counterpart due to an effective decrease of the density, resulting from the fabrication process. We propose the use of this combined method to extract elastic and optical parameters of glass materials in microsphere geometries and compare them with the values of the pristine material from which they are formed

Enhanced Thermal Conductivity of Free-Standing Double-Walled Carbon Nanotube Networks

Nanomaterials are driving advances in technology due to their oftentimes superior properties over bulk materials. In particular, their thermal properties become increasingly important as efficient heat dissipation is required to realize high-performance electronic devices, reduce energy consumption, and prevent thermal damage. One application where nanomaterials can play a crucial role is extreme ultraviolet (EUV) lithography, where pellicles that protect the photomask from particle contamination have to be transparent to EUV light, mechanically strong, and thermally conductive in order to withstand the heat associated with high-power EUV radiation. Free-standing carbon nanotube (CNT) films have emerged as candidates due to their high EUV transparency and ability to withstand heat. However, the thermal transport properties of these films are not well understood beyond bulk emissivity measurements. Here, we measure the thermal conductivity of free-standing CNT films using all-optical Raman thermometry at temperatures between 300 and 700 K. We find thermal conductivities up to 50 W m-1 K-1 for films composed of double-walled CNTs, which rises to 257 W m-1 K-1 when considering the CNT network alone. These values are remarkably high for randomly oriented CNT networks, roughly seven times that of single-walled CNT films. The enhanced thermal conduction is due to the additional wall, which likely gives rise to additional heat-carrying phonon modes and provides a certain resilience to defects. Our results demonstrate that free-standing double-walled CNT films efficiently dissipate heat, enhancing our understanding of these promising films and how they are suited to applications in EUV lithography.</p