Investigating The Vortex Melting Phenomenon In BSCCO Crystals Using Magneto-Optical Imaging Technique

Using a novel differential magneto-optical imaging technique we investigate the phenomenon of vortex lattice melting in crystals of Bi_2Sr_2CaCu_2O_8 (BSCCO). The images of melting reveal complex patterns in the formation and evolution of the vortex solid-liquid interface with varying field (H) or temperature (T). We believe that the complex melting patterns are due to a random distribution of material disorder or inhomogeneities across the sample, which create fluctuations in the local melting temperature or field value. To study the fluctuations in the local melting temperature / field, we have constructed maps of the melting landscape T_m(H,r), viz., the melting temperature (T_m) at a given location (r) in the sample at a given field (H). A study of these melting landscapes reveals an unexpected feature: the melting landscape is not fixed, but changes rather dramatically with varying field and temperature along the melting line. It is concluded that the changes in both the scale and shape of the landscape result from the competing contributions of different types of quenched disorder which have opposite effects on the local melting transition.Comment: Paper presented at the International Symposium on Advances in Superconductivity & Magnetism: Materials, Mechanisms & Devices September 25-28, 2001, Mangalore, India. Symposium proceedings will be published in a special issue of Pramana - Journal of Physic

Temperature variations of the disorder-induced vortex-lattice melting landscape

Differential magneto-optical imaging of the vortex-lattice melting process in Bi_2Sr_2CaCu_2O_8 crystals reveals unexpected effects of quenched disorder on the broadening of the first-order phase transition. The melting patterns show that the disorder-induced melting landscape T_m(H,r) is not fixed, but rather changes dramatically with varying field and temperature along the melting line. The changes in both the scale and shape of the landscape are found to result from the competing contributions of different types of quenched disorder which have opposite effects on the local melting transition.Comment: 4 pages of text and 3 figures. Accepted for Publication in Physical Review Letter

Modal Filters for Infrared Interferometry

Modal filters in the approximately equal to 10-micrometer spectral range have been implemented as planar dielectric waveguides in infrared interferometric applications such as searching for Earth-like planets. When looking for a small, dim object ("Earth") in close proximity to a large, bright object ("Sun"), the interferometric technique uses beams from two telescopes combined with a 180 phase shift in order to cancel the light from a brighter object. The interferometer baseline can be adjusted so that, at the same time, the light from the dimmer object arrives at the combiner in phase. This light can be detected and its infrared (IR) optical spectra can be studied. The cancellation of light from the "Sun" to approximately equal to 10(exp 6) is required; this is not possible without special devices-modal filters- that equalize the wavefronts arriving from the two telescopes. Currently, modal filters in the approximately equal to 10-micrometer spectral range are implemented as single- mode fibers. Using semiconductor technology, single-mode waveguides for use as modal filters were fabricated. Two designs were implemented: one using an InGaAs waveguide layer matched to an InP substrate, and one using InAlAs matched to an InP substrate. Photon Design software was used to design the waveguides, with the main feature all designs being single-mode operation in the 10.5- to 17-micrometer spectral range. Preliminary results show that the filter's rejection ratio is 26 dB

Growth and characteristics of type-II InAs/GaSb superlattice-based detectors

We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design. The unipolar barriers on either side of the absorber in the CBIRD design in combination with the type-II InAs/GaSb superlattice material system are expected to outperform traditional III-V LWIR imaging technologies and offer significant advantages over the conventional II-VI material based FPAs. The innovative design of CBIRDS, low defect density material growth, and robust fabrication processes have resulted in the development of high performance long wave infrared (LWIR) focal plane arrays at JPL

Unipolar Barrier Dual-Band Infrared Detectors

Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer

Anisotropic flux creep in Bi2212:Pb single crystal in crossed magnetic fields

An experimental study of magnetic flux penetration under crossed magnetic fields in Bi2212:Pb single crystals is performed by the magneto-optic technique. The anisotropy of the flux creep rate induced by the in-plane magnetic field is observed at $T<54\pm 2$ K. This observation confirms the existence of the three-dimensional flux line structure in Bi2212:Pb at low temperatures. An asymmetry of the flux relaxation with respect to the direction of the in-plane field is found. This effect can be attributed to the influence of the laminar structure on the pinning in Bi2212:Pb single crystals.Comment: 6 pages, 6 figure

Mid- and Long-IR Broadband Quantum Well Photodetector

A single-stack broadband quantum well infrared photodetector (QWIP) has been developed that consists of stacked layers of GaAs/AlGaAs quantum wells with absorption peaks centered at various wavelengths spanning across the 9- to-11- m spectral regions. The correct design of broadband QWIPs was a critical step in this task because the earlier implementation of broadband QWIPs suffered from a tuning of spectral response curve with an applied bias. Here, a new QWIP design has been developed to overcome the spectral tuning with voltage that results from non-uniformity and bias variation of the electrical field across the detector stacks with different absorption wavelengths. In this design, a special effort has been made to avoid non-uniformity and bias tuning by changing the doping levels in detector stacks to compensate for variation of dark current generation rate across the stacks with different absorption wavelengths. Single-pixel photodetectors were grown, fabricated, and tested using this new design. The measured dark current is comparable with the dark measured current for single-color QWIP detectors with similar cutoff wavelength, thus indicating high material quality as well as absence of performance degradation resulting from broadband design. The measured spectra clearly demonstrate that the developed detectors cover the desired special range of 8 to 12 m. Moreover, the shape of the spectral curves does not change with applied biases, thus overcoming the problem plaguing previous designs of broadband QWIPs

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane