Synthesis and integration of one-dimensional nanostructures for chemical gas sensing applications

The need for improved measurement technology for the detection and monitoring of gases has increased tremendously for maintenance of domestic and industrial health and safety, environmental surveys, national security, food-processing, medical diagnostics and various other industrial applications. Among the several varieties of gas sensors available in the market, solid-state sensors are the most popular owing to their excellent sensitivity, ruggedness, versatility and low cost. Semiconducting metal oxides such as tin oxide (SnO2), zinc oxide (ZnO), and tungsten oxide (WO3) are routinely employed as active materials in these sensors. Since their performance is directly linked to the exposed surface area of the sensing material, one-dimensional nanostructures possessing very high surface to volume ratios are attractive candidates for designing the next generation of sensors. Such nano-sensors also enable miniaturization thereby reducing power consumption. The key to achieve success in one-dimensional nanotechnologies lies in assembly. While synthesis techniques and capabilities continue to expand rapidly, progress in controlled assembly has been sluggish due to numerous technical challenges. In this doctoral thesis work, synthesis and characterization of various one-dimensional nanostructures including nanotubes of SnO2, and nanowires of WO3 and ZnO, as well as their direct integration into miniature sensor platforms called microhotplates have been demonstrated. The key highlights of this research include devising elegant strategies for growing metal oxide nanotubes using carbon nanotubes as templates, substantially reducing process temperatures to enable growth of WO3 nanowires on microhotplates, and successfully fabricating a ZnO nanowire array based sensor using a hybrid nanowire-nanoparticle assembly approach. In every process, the gas-sensing properties of one-dimensional nanostructures were observed to be far superior in comparison with thin films of the same material. Essentially, we have formulated simple processes for improving current thin film sensors as well as a means of incorporating nanostructures directly into miniature sensing devices. Apart from gas sensing applications, the approaches described in this work are suitable for designing future nanoelectronic devices such as gas-ionization, capacitive and calorimetric sensors, miniature sensor arrays for electronic nose applications, field emitters, as well as photonic devices such as nanoscale LEDs and lasers

Influence of Ni Catalyst Layer and TiN Diffusion Barrier on Carbon Nanotube Growth Rate

Dense, vertically aligned multiwall carbon nanotubes were synthesized on TiN electrode layers for infrared sensing applications. Microwave plasma-enhanced chemical vapor deposition and Ni catalyst were used for the nanotubes synthesis. The resultant nanotubes were characterized by SEM, AFM, and TEM. Since the length of the nanotubes influences sensor characteristics, we study in details the effects of changing Ni and TiN thickness on the physical properties of the nanotubes. In this paper, we report the observation of a threshold Ni thickness of about 4 nm, when the average CNT growth rate switches from an increasing to a decreasing function of increasing Ni thickness, for a process temperature of 700°C. This behavior is likely related to a transition in the growth mode from a predominantly “base growth” to that of a “tip growth.” For Ni layer greater than 9 nm the growth rate, as well as the CNT diameter, variations become insignificant. We have also observed that a TiN barrier layer appears to favor the growth of thinner CNTs compared to a SiO2 layer

Selective formation of tungsten nanowires

We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formation is confined to the polysilicon regions; hence, the nanowires are formed without the need for lithography or for additional processing. The fabricated tungsten nanowires were observed to be perfectly aligned, showing 100% selectivity to polysilicon and can be made to be electrically isolated from one another. The electrical conductivity of the nanowires was characterized to determine the effect of its physical dimensions. The conductivity for the tungsten nanowires were found to be 40% higher when compared to doped polysilicon nanowires of similar dimensions

Fabrication of a Highly Sensitive Chemical Sensor Based on ZnO Nanorod Arrays

We report a novel method for fabricating a highly sensitive chemical sensor based on a ZnO nanorod array that is epitaxially grown on a Pt-coated Si substrate, with a top–top electrode configuration. To practically test the device, its O2 and NO2 sensing properties were investigated. The gas sensing properties of this type of device suggest that the approach is promising for the fabrication of sensitive and reliable nanorod chemical sensors

Optical and Electronic NOx Sensors for Applications in Mechatronics

Current production and emerging NOx sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NOx show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NOx in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NOx sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling