Auxiliary titanium sublimation pump produces ultrahigh /10 to the minus 11 torr/ vacuum

Sublimated titanium as a gettering agent in conjunction with a turbine-type pump provides a two-step procedure for obtaining an ultrahigh vacuum of 10 to the minus 11 torr. The pump alone evacuates the chamber to a pressure of 10 to the minus 9 torr. The residual gas is removed by the gettering agent at a pumping speed of 15 liters per second per square inch

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Agricultural and Food Policy,

Effect of vacuum processing on outgassing within an orbiting molecular shield

The limiting hydrogen number density in an orbiting molecular shield is highly dependent on the outgassing rates from the materials of construction for the shield, experimental apparatus, and other hardware contained within the shield. Ordinary degassing temperatures used for ultrahigh vacuum studies (less than 450 C) are not sufficient to process metals so that the contribution to the number density within the shield due to outgassing is less than the theoretically attainable level (approximately 200 per cu. cm). Pure aluminum and type 347 stainless steel were studied as candidate shield materials. Measurements of their hydrogen concentration and diffusion coefficients were made, and the effects of high temperature vacuum processing (greater than 600 C) on their resulting outgassing rates was determined. The densities in a molecular shield due to the outgassing from either metal were substantially less ( 0.003) than the density due to the ambient atomic hydrogen flux at an orbital altitude of 500 km

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Agricultural and Food Policy,

Physical adsorption of nitrogen gas on the polished surface of 347 stainless steel at very low pressures

Physical adsorption of nitrogen gas on polished surface of 347 stainless steel at low pressure

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Agricultural and Food Policy,

The solution of transcendental equations

Some of the existing methods to globally approximate the roots of transcendental equations namely, Graeffe's method, are studied. Summation of the reciprocated roots, Whittaker-Bernoulli method, and the extension of Bernoulli's method via Koenig's theorem are presented. The Aitken's delta squared process is used to accelerate the convergence. Finally, the suitability of these methods is discussed in various cases

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Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition

Thin-film Ge single crystals (approx. 10 microns) have been epitaxially grown on polished NaCl(100) substrates at 450C by using plasma-enhanced chemical vapor deposition. Films on approximately 1 sq cm and larger were separated from the NaCl by either melting the salt or by differential shear stress upon cooling to room temperature. The ordered growth of the Ge was found to be most sensitive to the initial plasma power and to the continuum flow dynamics within the carbon susceptor. The films were visually specular and exhibited a high degree of crysalline order when examined by X-ray diffraction. The films were found to be p-type with a carrier concentration of approximately 3 x 10 to the 16th power/cu cm, a resistivity of 0.11 ohm-cm, and a Hall hole mobility of 1820 sq cm/v/s at room temperature. Vacuum firing minimized the primary contaminant, Na, and corresponding lowered the carrier concentration to 4 x 10 to the 14th power/cu cm

Introduction to total- and partial-pressure measurements in vacuum systems

An introduction to the fundamentals of total and partial pressure measurement in the vacuum regime (760 x 10 to the -16th power Torr) is presented. The instrument most often used in scientific fields requiring vacuum measurement are discussed with special emphasis on ionization type gauges and quadrupole mass spectrometers. Some attention is also given to potential errors in measurement as well as calibration techniques