What is a European Identity? The Emergence of a Shared Ethical Self-Understanding in the European Union

European identity; European public space; identity; normative political theory

Linear Parameter-Varying Control of a Ducted Fan Engine

Parameter-dependent control techniques are applied to a vectored thrust, ducted fan engine. The synthesis technique is based on the solution of Linear Matrix Inequalities and produces a controller which achieves specified performance against the worst-case time variation of measurable parameters entering the plant in a linear fractional manner. Thus the plant can have widely varying dynamics over the operating range. The controller designed performs extremely well, and is compared to an ℋ∞ controller

Delay-induced patterns in a two-dimensional lattice of coupled oscillators

We show how a variety of stable spatio-temporal periodic patterns can be created in 2D-lattices of coupled oscillators with non-homogeneous coupling delays. A "hybrid dispersion relation" is introduced, which allows studying the stability of time-periodic patterns analytically in the limit of large delay. The results are illustrated using the FitzHugh-Nagumo coupled neurons as well as coupled limit cycle (Stuart-Landau) oscillators

Hybrid quantum-classical modeling of quantum dot devices

The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics. We connect the well-established fields of semi-classical semiconductor transport theory and the theory of open quantum systems to meet this requirement. By coupling the van Roosbroeck system with a quantum master equation in Lindblad form, we introduce a new hybrid quantum-classical modeling approach, which provides a comprehensive description of quantum dot devices on multiple scales: It enables the calculation of quantum optical figures of merit and the spatially resolved simulation of the current flow in realistic semiconductor device geometries in a unified way. We construct the interface between both theories in such a way, that the resulting hybrid system obeys the fundamental axioms of (non-)equilibrium thermodynamics. We show that our approach guarantees the conservation of charge, consistency with the thermodynamic equilibrium and the second law of thermodynamics. The feasibility of the approach is demonstrated by numerical simulations of an electrically driven single-photon source based on a single quantum dot in the stationary and transient operation regime

Dubious decision evidence and criterion flexibility in recognition memory.

When old-new recognition judgments must be based on ambiguous memory evidence, a proper criterion for responding "old" can substantially improve accuracy, but participants are typically suboptimal in their placement of decision criteria. Various accounts of suboptimal criterion placement have been proposed. The most parsimonious, however, is that subjects simply over-rely on memory evidence - however faulty - as a basis for decisions. We tested this account with a novel recognition paradigm in which old-new discrimination was minimal and critical errors were avoided by adopting highly liberal or conservative biases. In Experiment 1, criterion shifts were necessary to adapt to changing target probabilities or, in a "security patrol" scenario, to avoid either letting dangerous people go free (misses) or harming innocent people (false alarms). Experiment 2 added a condition in which financial incentives drove criterion shifts. Critical errors were frequent, similar across sources of motivation, and only moderately reduced by feedback. In Experiment 3, critical errors were only modestly reduced in a version of the security patrol with no study phase. These findings indicate that participants use even transparently non-probative information as an alternative to heavy reliance on a decision rule, a strategy that precludes optimal criterion placement

Generalized Scharfetter--Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

Many challenges faced in today's semiconductor devices are related to self-heating phenomena. The optimization of device designs can be assisted by numerical simulations using the non-isothermal drift-diffusion system, where the magnitude of the thermoelectric cross effects is controlled by the Seebeck coefficient. We show that the model equations take a remarkably simple form when assuming the so-called Kelvin formula for the Seebeck coefficient. The corresponding heat generation rate involves exactly the three classically known self-heating effects, namely Joule, recombination and Thomson--Peltier heating, without any further (transient) contributions. Moreover, the thermal driving force in the electrical current density expressions can be entirely absorbed in the (nonlinear) diffusion coefficient via a generalized Einstein relation. The efficient numerical simulation relies on an accurate and robust discretization technique for the fluxes (finite volume Scharfetter--Gummel method), which allows to cope with the typically stiff solutions of the semiconductor device equations. We derive two non-isothermal generalizations of the Scharfetter--Gummel scheme for degenerate semiconductors (Fermi--Dirac statistics) obeying the Kelvin formula. The approaches differ in the treatment of degeneration effects: The first is based on an approximation of the discrete generalized Einstein relation implying a specifically modified thermal voltage, whereas the second scheme follows the conventionally used approach employing a modified electric field. We present a detailed analysis and comparison of both schemes, indicating a superior performance of the modified thermal voltage scheme

Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

Many challenges faced in today's semiconductor devices are related to self-heating phenomena. The optimization of device designs can be assisted by numerical simulations using the non-isothermal drift-diffusion system, where the magnitude of the thermoelectric cross effects is controlled by the Seebeck coefficient. We show that the model equations take a remarkably simple form when assuming the so-called Kelvin formula for the Seebeck coefficient. The corresponding heat generation rate involves exactly the three classically known self-heating effects, namely Joule, recombination and Thomson-Peltier heating, without any further (transient) contributions. Moreover, the thermal driving force in the electrical current density expressions can be entirely absorbed in the diffusion coefficient via a generalized Einstein relation. The efficient numerical simulation relies on an accurate and robust discretization technique for the fluxes (finite volume Scharfetter-Gummel method), which allows to cope with the typically stiff solutions of the semiconductor device equations. We derive two non-isothermal generalizations of the Scharfetter-Gummel scheme for degenerate semiconductors (Fermi-Dirac statistics) obeying the Kelvin formula. The approaches differ in the treatment of degeneration effects: The first is based on an approximation of the discrete generalized Einstein relation implying a specifically modified thermal voltage, whereas the second scheme follows the conventionally used approach employing a modified electric field. We present a detailed analysis and comparison of both schemes, indicating a superior performance of the modified thermal voltage scheme.Comment: 26 pages, 7 figure