Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys

(Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10(-8) A/cm(2) at -1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance-voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 10(12) cm(-2) eV(-1) range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications

Sweet's syndrome in a patient with Crohn's disease: a case report

<p>Abstract</p> <p>Background</p> <p>Sweet's syndrome, also known as acute febrile neutrophilic dermatosis, has been associated with malignancy, autoimmune disease and collagen vascular disease. The association of Crohn's disease and Sweet's syndrome is rare. We report a case of Sweet's syndrome in a patient with Crohn's disease.</p> <p>Case presentation</p> <p>A 63-year-old man with a history of Crohn's disease presented with one-week duration of abdominal pain, diarrhea and hematochezia. He also noticed eruption of painful skin rashes all over his body at the same time. Colonoscopy and esophagogastroduodenoscopy (EGD) showed inflammation involving different parts of the gastrointestinal tract consistent with Crohn's disease. Punch biopsy of the skin lesion was consistent with Sweet's syndrome, which has a rare association with Crohn's disease.</p> <p>Conclusion</p> <p>Crohn's disease should be excluded in patients presenting with Sweet's syndrome and diarrhea. Alternatively, Sweet's syndrome should be considered as a diagnosis when a patient with Crohn's disease develops skin lesions.</p

Ultra-Low Threshold cw Lasing in Tensile Strained GeSn Microdisk Cavities

GeSn is proven as a good candidate to achieve CMOS-compatible laser sources on silicon. Lasing demonstrations in this alloy were based on directness of the band structure, this directness being increased with increasing the Sn content above 8 at.%. These past few years the research were consequently focused on incorporating the highest Sn content as possible to achieve high directness and high temperature laser operation. This unfortunately results is increased threshold. In this contribution we discuss the advantages in combining tensile strain engineering with lower Sn content alloys. This approach is motivated by the higher material quality in lower Sn content. The case with Sn content as small as 5.4 at.% Sn will be discussed. The alloy is initially compressively strained, and exhibits an indirect band gap that is turned to direct by applying tensile strain. A specific technology based on transfer On Insulator stressor layer on metal was developed to address strain engineering, thermal cooling and defective interface with the Ge-VS. This led to lasing in Ge0.95Sn0.05 microdisk cavities with dramatically reduced thresholds, by two order of magnitude, as compared to the case with high Sn alloys and as consequence enables cw operation

Impact of tensile strain on low Sn content GeSn lasing

In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal budget regarding processing. In this work we demonstrate strong photoluminescence enhancement in low Sn content Ge0.94Sn0.06 layers by implementing tensile strain. Fitting of the calculated photoluminescence spectra to reproduce our experimental results indicates a strain of ~1.45%, induced via an SiNx stressor layer, which is strong enough to transform the investigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the 8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respect to gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential to enable efficient room temperature lasers on electronic-photonic integrated circuits

Gluten sensitivity enteropathy in patients with recurrent aphthous stomatitis

<p>Abstract</p> <p>Background</p> <p>Gluten sensitive enteropathy (GSE) is an autoimmune enteropathy triggered by the ingestion of gluten-containing grains in susceptible individuals. Recurrent aphthous stomatitis (RAS) may be the sole manifestation of GSE. The aim of this study was to determine the prevalence of gluten sensitivity enteropathy (GSE) in a large group of patients with RAS and assess the efficacy of gluten free diet (GFD) on the improvement of aphthous lesions in those who were diagnosed with GSE.</p> <p>Methods</p> <p>Two hundred and forty seven patients with RAS were included. The patients had at least three aphthous attacks per year. Patients were screened by IgA anti-endomysial antibody (EMA), IgA anti tissue transglutaminase (TTG) and serum IgA level. Those with a positive serology underwent endoscopic biopsies of the duodenal mucosa and patients with negative serology were excluded. The diagnosis of GSE was based on a positive serological test and abnormal duodenal histology. For patients with GSE, gluten free diet was recommended.</p> <p>Results</p> <p>Six out of 247 RAS patients had positive TTG test alone, and one had positive EMA and TTG. All 7 patients with positive serologic tests underwent duodenal biopsies. Histological findings were compatible with GSE in all of them (Marsh I in four patients, Marsh II in two patients and Marsh IIIB in one another.). The mean age of GSE patients was 27.42 ± 10.56 (range, 13 to 40) years old. They were suffering from RAS for an average duration of 4.5 years. All of the 7 GSE patients had not responded to the routine anti-aphthae medications, including topical corticosteroids, tetracycline and colchicine. Four patients who adhered to a strict gluten-free diet showed noticeable improvement in their aphthous lesions over a period of 6 months.</p> <p>Conclusion</p> <p>A significant minority (e.g. 2.83%) of RAS patients have GSE. This could be compared with the 0.9% prevalence of GSE in the general population of Iran. This study suggests that evaluation for celiac disease is appropriate in patients with RAS. Additionally, the unresponsiveness to conventional anti-aphthae treatment could be an additional risk indicator.</p

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, where charge carrier confinement strongly improves the radiative emission properties. Based on recent experimental literature data, in this report we discuss the advantages of GeSn/SiGeSn multi quantum well and quantum dot structures, aiming to propose a roadmap for group IV epitaxy. Calculations based on 8-band k∙p and effective mass method have been performed to determine band discontinuities, the energy difference between Γ- and L-valley conduction band edges, and optical properties such as material gain and optical cross section. The effects of these parameters are systematically analyzed for an experimentally achievable range of Sn (10 to 20 at.%) and Si (1 to 10 at.%) contents, as well as strain values (−1 to 1%). We show that charge carriers can be efficiently confined in the active region of optical devices for experimentally acceptable Sn contents in both multi quantum well and quantum dot configurations

Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform